Solid state lighting devices with improved contacts and associated methods of manufacturing
Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.
1. A solid state lighting (“SSL”) device, comprising:
an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials;
a first contact on the first semiconductor material;
a second contact on the second semiconductor material, the first and second contacts define a current flow path through the SSL structure;
an insulative material between the first semiconductor material and the active region or between the active region and the second semiconductor material;
the insulative material having a plurality of openings, at least one of the plurality of openings having a different shape or size from the other openings; and
a conductive material in the plurality of openings; and
wherein the first or the second contact is configured to provide defined current flow paths through the first and second semiconductor materials that provide a current density profile in the SSL structure based on a target current density profile.
2. The SSL device of claim 1 wherein:
the first semiconductor material includes a P-type gallium nitride (“GaN”) material;
the second semiconductor material includes an N-type GaN material;
the active region includes at least one of a bulk indium gallium nitride (“InGaN”) material, an InGaN single quantum well (“SQW”), and GaN/InGaN multiple quantum wells (“MQWs”); and
the conductive material includes at least one of aluminum zinc oxide and fluorine-doped tin oxide.
3. The SSL device of claim 1 wherein:
the second contact is opposite the first contact; and
the first contact includes a conductive material on the first semiconductor material.
4. The SSL device of claim 1 wherein:
the second contact is opposite the first contact.
5. The SSL device of claim 1 wherein:
the second contact is opposite the first contact;
the contact material includes silver (Ag); and
the conductive material includes aluminum (Al).