Apparatuses and methods for detection refresh starvation of a memory
Apparatuses and methods for detecting refresh starvation at a memory. An example apparatus may include a plurality of memory cells, and a control circuit configured to monitor refresh request commands and to perform an action that prevents unauthorized access to data stored at the plurality of memory cells in response to detection that timing of the refresh request commands has failed to meet a refresh timing limit.
1. An apparatus comprising:
a plurality of memory cells; and
a control circuit configured to monitor refresh request commands and to perform an action that prevents unauthorized access to data stored at the plurality of memory cells in response to detection that timing of the refresh request commands has failed to meet a refresh timing limit.
2. The apparatus of claim 1 , wherein the controller circuit comprises a plurality of stage circuits configured to track the timing of the refresh request commands and provide an indication that the timing of the refresh request commands has failed to meet the refresh timing limit.
3. The apparatus of claim 2 , wherein a first subset of the plurality of stage circuits are initialized to provide a first output value and a remaining subset of the plurality of stage circuits are initialized to provide a second output value.
4. The apparatus of claim 2 , wherein the plurality of stage circuits are serially-coupled.
5. The apparatus of claim 2 , wherein a first stage circuit of the plurality of stage circuits is configured to receive a request signal indicating expiration of a timer and to provide the indication that the timing of the refresh request commands has failed to meet the refresh timing limit, wherein the timer is associated with a defined interval between expected receipt of refresh request commands.
6. The apparatus of claim 5 , wherein a last stage circuit of the plurality of stage circuits is configured to receive an acknowledge signal indicating acknowledgment of a refresh request command.
7. The apparatus of claim 1 , wherein the control circuit is configured to steal refresh commands to perform row hammer refreshes, wherein the control circuit is configured to increase a rate at which refresh commands are stolen to perform row hammer refreshes in response to detection that timing of the refresh request commands has failed to meet the refresh timing limit.
8. The apparatus of claim 7 , wherein the control circuit is configured to randomly intercept an access line address from an address bus and to select an adjacent access line address to steal a refresh command.
9. The apparatus of claim 1 , wherein, to perform the action that prevents unauthorized access to the data stored at the plurality of memory cells, the control circuit is configured to cause a temperature controlled refresh mode that adjusts a refresh rate based on certain environmental conditions to be disabled, cause refreshes to be skipped, cause data to be overwritten, locking out access to the plurality of memory cells, or combinations thereof.
10. A method comprising:
monitoring refresh request commands received from a controller at a semiconductor device; and
performing an action that prevents unauthorized access to data stored at the semiconductor device in response to detection that timing of the refresh request commands has failed to meet a refresh timing limit.
11. The method of claim 10 , further comprising detecting that the timing of the refresh request commands has exceeded a predefined time limit in response to lack of receipt of refresh request commands for the refresh steal time limit.
12. The method of claim 10 , wherein monitoring the refresh request commands received from the controller at the memory comprises:
decrementing a current stage circuit of a plurality of stage circuits to a previous stage circuit in response to receipt of a request signal that indicates a time interval between expected refresh request commands has been exceeded; and
incrementing the current stage circuit of a plurality of stage circuits to a subsequent stage circuit in response to receipt of an acknowledge signal that indicates a receipt of a refresh request command.
13. The method of claim 12 , further comprising providing an indication that the timing of the refresh request commands has failed to meet the refresh timing limit when the current stage circuit is a first stage circuit of the plurality of stage circuits.
14. The method of claim 10 , wherein performing the action that prevents unauthorized access to data stored at the semiconductor device comprises increasing a row hammer refresh steal rate to increase.
15. The method of claim 10 , wherein performing the action that prevents unauthorized access to data stored at the semiconductor device comprises causing a temperature controlled refresh mode that adjusts a refresh rate based on certain environmental conditions to be disabled, skipping refreshes, overwriting data stored at the semiconductor device, locking out access to the semiconductor device, or combinations thereof.
16. The method of claim 10 , wherein the semiconductor device is a double-data rate dynamic random access memory (DDR DRAM).