IP Library Granted Patent US 9,911,609
Granted Patent B2
US 9,911,609 · App. 15/606,601 · Granted Mar 6, 2018

Methods of forming nanostructures having low defect density

Inventor: Gurtej S. Sandhu (Boise, ID)
Assignee: Micron Technology, Inc.
H01L21/0338B81C1/00031H01L21/0332H01L21/0335H01L21/0337H01L21/3081H01L21/3086H01L21/76868B81C2201/0149H01L2221/1094H01L2924/0002
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Quick Facts
Patent No.
US 9,911,609
App. No.
15/606,601
Filed
May 26, 2017
Granted
Mar 6, 2018
Kind
B2
Art Unit
2813
USPC
438/99
Abstract

A method of forming a nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm.

Claims (27)

1. A method of forming a nanostructure, comprising:

forming a pattern of self-assembled nucleic acids on a substrate;

contacting the pattern of self-assembled nucleic acids with at least one repair enzyme to repair defects in the pattern of self-assembled nucleic acids; and

transferring the repaired pattern of self-assembled nucleic acids to the substrate to form features therein.

2. The method of claim 1 , wherein forming a pattern of self-assembled nucleic acids on a substrate comprises forming a self-assembled multi-stranded nucleic acid structure, a self-assembled scaffolded nucleic acid structure, or a self-assembled single-stranded nucleic acid structure on the substrate.

3. The method of claim 1 , wherein contacting the pattern of self-assembled nucleic acids with at least one repair enzyme comprises reducing a defect density in the pattern of self-assembled nucleic acids.

4. The method of claim 1 , wherein transferring the repaired pattern of self-assembled nucleic acids to the substrate to form features therein comprises forming the features having a lower defect density than the defect density in the pattern of self-assembled nucleic acids.

5. The method of claim 1 , wherein transferring the repaired pattern of self-assembled nucleic acids to the substrate to form features therein comprises forming features having dimensions of less than about 50 nm in the substrate.

6. A method of forming a nanostructure, comprising:

self-assembling nucleic acids on a substrate to form an initial self-assembled nucleic acid pattern;

contacting the initial self-assembled nucleic acid pattern with at least one repair enzyme and repairing defects in the self-assembled nucleic acid pattern; and

transferring the repaired self-assembled nucleic acid pattern to the substrate.

7. The method of claim 6 , wherein self-assembling nucleic acids on a substrate to form an initial self-assembled nucleic acid pattern comprises bonding the self-assembled nucleic acids to the substrate.

8. The method of claim 6 , wherein self-assembling nucleic acids on a substrate to form an initial self-assembled nucleic acid pattern comprises covalently bonding nucleic acids of the self-assembled nucleic acids to the substrate.

9. The method of claim 8 , wherein covalently bonding nucleic acids of the self-assembled nucleic acids to the substrate comprises bonding a primary amine group on the nucleic acids to the substrate.

10. The method of claim 8 , wherein covalently bonding nucleic acids of the self-assembled nucleic acids to the substrate comprises bonding an amine derivatized with a thiolation reagent on the nucleic acids to the substrate.

11. The method of claim 6 , wherein self-assembling nucleic acids on a substrate to form an initial self-assembled nucleic acid pattern comprises forming ionic attractions between the self-assembled nucleic acids and the substrate.

12. A method of forming a nanostructure, comprising:

forming a pattern of self-assembled nucleic acids on a substrate;

contacting the pattern of self-assembled nucleic acids with at least one repair enzyme and repairing defects in the pattern of self-assembled nucleic acids; and

transferring the pattern of self-assembled nucleic acids to the substrate and forming a modified substrate, the modified substrate having a lower defect level than the pattern of self-assembled nucleic acids.

13. The method of claim 12 , wherein contacting the pattern of self-assembled nucleic acids with at least one repair enzyme and repairing defects in the pattern of self-assembled nucleic acids comprises excising at least one base from the pattern of self-assembled nucleic acids.

14. The method of claim 12 , wherein contacting the pattern of self-assembled nucleic acids with at least one repair enzyme and repairing defects in the pattern of self-assembled nucleic acids comprises repairing a defect in two divalent metal ion binding sites in the pattern of self-assembled nucleic acids.

15. The method of claim 12 , wherein contacting the pattern of self-assembled nucleic acids with at least one repair enzyme and repairing defects in the pattern of self-assembled nucleic acids comprises repairing a defect in a single divalent metal ion binding site in the pattern of self-assembled nucleic acids.

16. The method of claim 12 , wherein transferring the pattern of self-assembled nucleic acids to the substrate comprises forming a corresponding pattern in the substrate, the corresponding pattern in the substrate comprising at least one dimension less than about 50 nm.

17. The method of claim 16 , further comprising forming nanocomponents in the corresponding pattern in the substrate.

18. The method of claim 17 , wherein forming nanocomponents in the corresponding pattern in the substrate comprises forming silicon nanowires, gold nanoparticles, semiconductive quantum dots, or fluorescent quantum dots in the substrate.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050700/0535 →
RELEASE OF SECURITY INTEREST Recorded Jul 20, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046597/0393 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 5 TO PATENT SECURITY AGREEMENT Recorded Aug 8, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 043482/0776 →
SUPPLEMENT NO. 5 TO PATENT SECURITY AGREEMENT Recorded Aug 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION
Reel/Frame 043483/0686 →
Continuity (3)
Continuation 14997108 · Jan 15, 2016
Division 14151635 · Jan 9, 2014
Related Publication 20170263456A1 · Sep 14, 2017