IP Library Granted Patent US 10,069,036
Granted Patent B2
US 10,069,036 · App. 15/643,227 · Granted Sep 4, 2018

Resonant optical cavity light emitting device

Inventor: Petar Atanackovic (Henley Beach South, SA, AU)
Assignee: SILANNA UV TECHNOLOGIES PTE LTD
H01L33/105H01L33/007H01L33/0012H01L33/0025H01L33/0075H01L33/06H01L33/32H01L33/46H01S5/187H01S5/18375H01S5/34333H01L33/12H01L2933/0025H01S2301/173
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Quick Facts
Patent No.
US 10,069,036
App. No.
15/643,227
Filed
Jul 6, 2017
Granted
Sep 4, 2018
Kind
B2
Art Unit
2823
USPC
257/13
Abstract

Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.

Claims (52)

1. A resonant optical cavity light emitting device comprising:

a substrate;

a first spacer region coupled to the substrate, the first spacer region being non-absorbing to a target emission deep ultraviolet wavelength (target wavelength), wherein at least a portion of the first spacer region comprises a first electrical polarity;

a light emitting region on the first spacer region, the light emitting region being configured to emit the target wavelength;

a second spacer region on the light emitting region, the second spacer region being non-absorbing to the target wavelength, wherein at least a portion of the second spacer region comprises a second electrical polarity opposite of the first electrical polarity; and

a reflector coupled to the second spacer region, the reflector having a metal composition comprising elemental aluminum;

wherein the light emitting region is positioned at a separation distance from the reflector; and

wherein the resonant optical cavity light emitting device has an optical cavity between the reflector and a first surface of the substrate, the optical cavity comprising the first spacer region, the second spacer region and the light emitting region, wherein the optical cavity has a total thickness less than or equal to K·λ/n, wherein K is a constant ranging from 0.25 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength;

wherein the separation distance is ½ to 9/10 of the total thickness of the optical cavity; and

wherein the resonant optical cavity light emitting device is configured as a p-down device, the first electrical polarity being p-type, the second electrical polarity being n-type.

2. The device of claim 1 , wherein the substrate is optically transparent to the target wavelength.

3. The device of claim 1 , wherein the substrate is opaque to the target wavelength, the substrate having an optical aperture through the substrate.

4. The device of claim 1 , wherein at least one of the light emitting region, the first spacer region, and the second spacer region comprise a superlattice.

5. A method of manufacturing a resonant optical cavity light emitting device, the method comprising:

providing a substrate;

providing a first spacer region coupled to the substrate, the first spacer region being non-absorbing to a target emission deep ultraviolet wavelength, wherein at least a portion of the first spacer region comprises a first electrical polarity;

providing a light emitting region on the first spacer region, the light emitting region being configured to generate light at the target wavelength;

providing a second spacer region on the light emitting region, the second spacer region being non-absorbing to the target wavelength, wherein at least a portion of the second spacer region comprises a second electrical polarity opposite of the first electrical polarity;

providing a reflector coupled to the second spacer region, the reflector having a metal composition comprising elemental aluminum, wherein the light emitting region is positioned at a separation distance from the reflector;

simulating the resonant optical cavity light emitting device using a three-dimensional electromagnetic spatial and temporal simulator, the simulating based on the light emitting region being at the separation distance from the reflector, wherein the three-dimensional electromagnetic spatial and temporal simulator is a finite-difference time-domain simulator; and

determining if an emission output at an exit plane relative to the substrate meets a predetermined criterion, wherein the predetermined criterion is selected from i) an optical extraction efficiency at the exit plane with respect to the light generated from the light emitting region at the target wavelength, ii) a target spatial profile of light emitted at the exit plane at the target wavelength, and iii) light extracted from the device being emitted substantially perpendicular to the substrate.

6. The method of claim 5 , wherein at least one of the light emitting region, the first spacer region, and the second spacer region comprise a superlattice.

7. The method of claim 5 , wherein the resonant optical cavity light emitting device is configured as a p-up device, the first electrical polarity being n-type, the second electrical polarity being p-type, and wherein the optical reflector comprises pure aluminum; and

wherein the method further comprises providing a compound semiconductor and metallic contact on the second spacer region.

8. The method of claim 5 , wherein the resonant optical cavity light emitting device is configured as a p-down device, the first electrical polarity being p-type, and the second electrical polarity being n-type; and

wherein the optical reflector is a metal electrical contact for the resonant optical cavity light emitting device.

9. The method of claim 5 , wherein the substrate is optically transparent to the target wavelength, and at the target wavelength, a refractive index of the optically transparent substrate is less than or equal to a refractive index of the first spacer region.

10. The method of claim 5 , wherein a cross-section of the resonant optical cavity light emitting device in a plane parallel to the substrate is non-axisymmetric, providing an optical emission polarization that is linearly polarized or elliptically polarized.

11. The method of claim 5 , wherein a cross-section of the resonant optical cavity light emitting device in a plane parallel to the substrate is axisymmetric, providing optical emission polarization that is unpolarized or circularly polarized.

12. The method of claim 5 , wherein:

the resonant optical cavity light emitting device has an optical cavity between the reflector and a first surface of the substrate, the optical cavity comprising the first spacer region, the second spacer region and the light emitting region;

the substrate is optically transparent at the target wavelength; and

the optical cavity has a total thickness comprising the distance from the first surface of the substrate to the reflector, the total thickness being less than or equal to K·λ/n, wherein K is a constant ranging from 0.5 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

13. The method of claim 12 , wherein the total thickness of the optical cavity is less than or equal to the target wavelength thereby forming a sub-wavelength resonator.

14. The method of claim 12 , further comprising:

selecting the target wavelength;

selecting a material for the optically transparent substrate;

selecting a thickness of the first spacer region; and

selecting a thickness of the second spacer region to match the target wavelength to at least one allowed optical mode formed by the optical cavity and the reflector.

15. A method of producing a resonant optical cavity light emitting device, the method comprising:

selecting a target emission deep ultraviolet wavelength to be produced by the resonant optical cavity light emitting device, the resonant optical cavity light emitting device comprising a light emitting region between a substrate and a reflector, the light emitting region being configured to generate light at the target wavelength, and the reflector having a metal composition comprising elemental aluminum, wherein a) a first spacer region is between the light emitting region and the substrate and b) a second spacer region is between the light emitting region and the reflector;

selecting a separation distance between the light emitting region and the reflector;

determining, using a three-dimensional electromagnetic spatial and temporal simulator, if an emission output at an exit plane relative to the substrate meets a predetermined criterion, wherein the predetermined criterion is selected from i) an optical extraction efficiency at the exit plane with respect to light generated from the light emitting region at the target wavelength, ii) a target spatial profile of light emitted at the exit plane at the target wavelength, and iii) light extracted from the device being emitted substantially perpendicular to the substrate;

repeating the step of selecting a separation distance and the step of determining if the emission output does not meet the predetermined criterion, wherein the repeating uses alternative values for the separation distance until a final separation distance results in the predetermined criterion being met; and

placing the light emitting region at the final separation distance from the reflector;

wherein the three-dimensional electromagnetic spatial and temporal simulator is a finite-difference time-domain simulator.

16. The method of claim 15 , wherein the resonant optical cavity light emitting device has an optical cavity between the reflector and a first surface of the substrate, the optical cavity comprising the first spacer region, the second spacer region and the light emitting region; and

wherein the method further comprises:

selecting a material for the substrate;

selecting a thickness of the first spacer region; and

selecting a thickness of the second spacer region to match the target wavelength to at least one allowed optical mode formed by the optical cavity and the reflector.

17. The method of claim 15 , wherein at least one of the light emitting region, the first spacer region, and the second spacer region each comprise a superlattice.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2017
From: ATANACKOVIC, PETAR
To: SILANNA SEMICONDUCTOR PTY LTD
Reel/Frame 042926/0994 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2017
From: SILANNA SEMICONDUCTOR PTY LTD
To: SILANNA UV TECHNOLOGIES PTE LTD
Reel/Frame 042926/0996 →
Continuity (3)
Continuation PCTIB2017050880 · Feb 16, 2017
Provisional Application 62298846 · Feb 23, 2016
Related Publication 20170309779A1 · Oct 26, 2017
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