Granted Patent B2

US 10,229,902 · App. 15/666,147 · Granted Mar 12, 2019

Inventors: Yu Zhu (Wellesley, MA); David Scott Whitefield (Andover, MA); Ambarish Roy (Waltham, MA); Guillaume Alexandre Blin (Carlisle, MA)

Assignee: Skyworks Solutions, Inc.

H01L27/0207H01L27/1203H01L2224/05554H01L2224/48091H01L2224/48227H01L2924/15184H01L2924/15192H01L2924/181

Abstract

Claims (26)

1. A switching device comprising:

a first terminal and a second terminal; and

a plurality of switching elements connected in series between the first terminal and the second terminal, the switching elements including a first end switching element connected to the first terminal and a second end switching element connected to the second terminal, each switching element having a parameter such that the switching elements have a distribution of parameter values that decreases from the first end switching element for at least half of the switching elements to a minimum parameter value corresponding to a switching element between the first end switching element and the second end switching element, the minimum parameter value less than the parameter value of the second end switching element, the parameter value of the first end switching element greater than or equal to the parameter value of the second end switching element.

2. The switching device of claim 1 wherein the distribution of parameter values is selected to provide a desired voltage drop profile among the connected switching elements.

3. The switching device of claim 2 wherein the desired voltage drop profile includes an approximately uniform voltage drop profile.

4. The switching device of claim 2 wherein the desired capacitance profile includes an approximately uniform capacitance profile.

5. The switching device of claim 1 wherein the distribution of parameter values is selected to provide a desired capacitance profile among the connected switching elements.

6. The switching device of claim 1 wherein each of the plurality of switching elements includes a transistor having an active region, and a source contact, a drain contact and a gate formed on the active region.

7. The switching device of claim 6 wherein the transistor is implemented as a silicon-on-insulator device.

8. The switching device of claim 6 wherein the parameter includes a width of the gate.

9. The switching device of claim 6 wherein the transistor is implemented as a finger configuration device such that the gate includes a number of rectangular shaped gate fingers, each gate finger implemented between a rectangular shaped source finger of the source contact and a rectangular shaped drain finger of the drain contact.

10. The switching device of claim 9 wherein the parameter includes a number of fingers associated with the gate.

11. The switching device of claim 1 wherein each of the plurality of switching elements includes a diode.

12. The switching device of claim 1 wherein each of the plurality of switching elements includes a microelectromechanical systems (MEMS) device.

13. The switching device of claim 1 wherein the parameter value of the first end switching element is greater than the parameter value of the second end switching element.

14. The switching device of claim 1 wherein the parameter value of the first end switching element is approximately equal to the parameter value of the second end switching element.

15. The switching device of claim 14 wherein the distribution of parameter values is approximately symmetric.

16. A semiconductor die comprising:

a semiconductor substrate; and

a switch circuit implemented on the semiconductor die and including a plurality of switching elements connected in series between a first terminal and a second terminal, the switching elements including a first end switching element connected to the first terminal and a second end switching element connected to the second terminal, each switching element having a parameter such that the switching elements have a distribution of parameter values that decreases from the first end switching element for at least half of the switching elements to a minimum parameter value corresponding to a switching element between the first end switching element and the second end switching element, the minimum parameter value less than the parameter value of the second end switching element, the parameter value of the first end switching element greater than or equal to the parameter value of the second end switching element.

17. The semiconductor die of claim 16 wherein the semiconductor substrate includes a silicon-on-insulator substrate.

18. A radio-frequency module comprising:

a packaging substrate configured to receive a plurality of components; and

a switch circuit implemented on the packaging substrate and including a plurality of switching elements connected in series between a first terminal and a second terminal, the switching elements including a first end switching element connected to the first terminal and a second end switching element connected to the second terminal, each switching element having a parameter such that the switching elements have a distribution of parameter values that decreases from the first end switching element for at least half of the switching elements to a minimum parameter value corresponding to a switching element between the first end switching element and the second end switching element, the minimum parameter value less than the parameter value of the second end switching element, the parameter value of the first end switching element greater than or equal to the parameter value of the second end switching element.

19. The radio-frequency module of claim 18 wherein the switch circuit is implemented on a semiconductor die which is mounted on the packaging substrate.

20. The radio-frequency module of claim 18 wherein the switch circuit is configured to support a front-end operation of a wireless device.

Continuity (3)

Cited By (10)

US 12,205,851 US 12,316,286 US 12,334,885 US 12,407,306 US 12,525,492 US 12,593,511 US 12,598,812 US 12,604,709 US 12,666,714 US 12,721,112