Planar variable resistance memory
An example memory device includes a planar semiconductor substrate layer; a planar variable resistance layer disposed above the planar semiconductor substrate layer; a planar channel layer disposed above the planar variable resistance layer; and one or more gates positioned along a length of the memory device and above the planar channel layer, wherein each respective gate of the one or more gates is configured to direct at least a portion of a current flowing through a respective region of the planar channel layer positioned below the respective gate into a respective region of the variable resistance layer positioned below the respective gate in response to a voltage applied to the respective gate being greater than a threshold voltage.
1. A method comprising:
accessing a particular memory cell of one or more memory cells of a memory device that includes a planar semiconductor substrate layer, a planar variable resistance layer disposed above the planar semiconductor substrate layer, a planar channel layer disposed above the planar variable resistance layer, and one or more gates positioned along a length of the memory device and above the planar channel layer, wherein each memory cell of the one or more memory cells is defined by a respective gate of the one or more gates, a respective region of the planar channel layer positioned below the respective gate, and a respective region of the variable resistance layer positioned below the respective gate, wherein accessing the particular memory cell comprises:
causing a current to flow through the planar channel layer; and
applying a voltage to the respective gate of the particular memory cell that is greater than a threshold voltage such that the respective gate directs at least a portion of the current flowing through a respective region of the planar channel layer positioned below the respective gate into the respective region of the variable resistance layer positioned below the respective gate.
2. The method of claim 1 , wherein accessing the particular memory cell comprises writing data to the particular memory cell by at least:
modifying a resistive state of the respective region of the variable resistance layer positioned below the respective gate.
3. The method of claim 2 , wherein accessing the particular memory cell comprises reading data from the particular memory cell by at least:
measuring a resistive state of the respective region of the variable resistance layer positioned below the respective gate.
4. The method of claim 3 , further comprising contemporaneously accessing a plurality of the one or more memory cells by at least:
applying voltage to respective gates of the plurality of memory cells that is greater than the threshold voltage such that the respective gates direct at least a portion of the current flowing through respective regions of the planar channel layer positioned below the respective gates into the respective regions of the variable resistance layer positioned below the respective gates.
5. The method of claim 2 , further comprising contemporaneously accessing a plurality of the one or more memory cells by at least:
applying voltage to respective gates of the plurality of memory cells that is greater than the threshold voltage such that the respective gates direct at least a portion of the current flowing through respective regions of the planar channel layer positioned below the respective gates into the respective regions of the variable resistance layer positioned below the respective gates.
6. The method of claim 1 , wherein accessing the particular memory cell comprises reading data from the particular memory cell by at least:
measuring a resistive state of the respective region of the variable resistance layer positioned below the respective gate.
7. The method of claim 6 , further comprising contemporaneously accessing a plurality of the one or more memory cells by at least:
applying voltage to respective gates of the plurality of memory cells that is greater than the threshold voltage such that the respective gates direct at least a portion of the current flowing through respective regions of the planar channel layer positioned below the respective gates into the respective regions of the variable resistance layer positioned below the respective gates.
8. The method of claim 1 , further comprising contemporaneously accessing a plurality of the one or more memory cells by at least:
applying voltage to respective gates of the plurality of memory cells that is greater than the threshold voltage such that the respective gates direct at least a portion of the current flowing through respective regions of the planar channel layer positioned below the respective gates into the respective regions of the variable resistance layer positioned below the respective gates.