Semiconductor package using a coreless signal distribution structure

1. A semiconductor package, comprising:

a signal distribution structure comprising:

an upper dielectric layer comprising an upper side, the upper side providing at least a portion of a top side of the signal distribution structure;

a lower dielectric layer comprising a lower side, the lower side providing at least a portion of a bottom side of the signal distribution structure;

a central dielectric layer between the upper dielectric layer and the lower dielectric layer;

one or more first conductive layers between the upper dielectric layer and the central dielectric layer;

one or more second conductive layers between the lower dielectric layer and the central dielectric layer; and

a first pad coupled through the upper dielectric layer to a first conductive layer of the one or more first conductive layers;

a first semiconductor die having a die top surface, a die bottom surface opposite the die top surface, a die side surface between the die top surface and the die bottom surface, and a first bond pad on the die bottom surface;

a first conductive structure that couples the first bond pad of the first semiconductor die to the first pad of the signal distribution structure, wherein the first conductive structure bonds the first semiconductor die above the top side of the signal distribution structure, creating a space between the die bottom surface and the top side of the signal distribution structure;

an underfill that extends:

into the space between the die bottom surface of the first semiconductor die and the top side of the signal distribution structure; and

over a portion of the die side surface;

a second semiconductor die having a second bond pad on a top surface of the second semiconductor die, wherein the second bond pad of the second semiconductor die is bonded to and below the bottom side of the signal distribution structure via a second conductive structure creating a space between the top surface of the semiconductor die and the bottom side of the signal distribution structure;

an electrical interconnect electrically coupled to the bottom side of the signal distribution structure, wherein at least a portion of the electrical interconnect extends externally beyond an external surface of the semiconductor package and is configured to electrically couple the semiconductor package to a component external to the semiconductor package;

a first encapsulant material encapsulating at least the die top surface and a portion of the top side of the signal distribution structure; and

a second encapsulant material encapsulating at least side surfaces of the second semiconductor die, wherein the second encapsulant material underfills at least a portion of the space between the top surface of the second semiconductor die and the bottom side of the signal distribution structure, and wherein the second encapsulant material encapsulates the electrical interconnect and at least a sidewall of the second conductive structure.

2. The semiconductor package according to claim 1 , wherein the second encapsulant material encapsulates the electrical interconnect without encapsulating at least the portion of the electrical interconnect external to the external surface of the semiconductor package.

3. The semiconductor package according to claim 2 , wherein:

the bottom side of the signal distribution structure comprises a bottom pad;

the electrical interconnect comprises a post and a ball;

the post comprises a first end coupled to the bottom pad of the signal distribution structure;

the ball is coupled to a second end of the post that is opposite the first end;

the portion of the electrical interconnect external to the external surface of the semiconductor package comprises at least a portion of the ball; and

the post has a height that is greater than a height of the second semiconductor die.

4. The semiconductor package according to claim 1 , wherein the underfill encapsulates and contacts the first conductive structure.

5. The semiconductor package according to claim 1 , wherein:

the signal distribution structure further comprises a second pad on the bottom side of signal distribution structure;

the second pad is coupled through the lower dielectric layer to a second conductive layer of the one or more second conductive layers; and

the second conductive structure that couples the second semiconductor die to the second pad of the signal distribution structure.

6. The semiconductor package according to claim 1 , further comprising a third semiconductor die having a third bond pad bonded to the top side of the signal distribution structure. wherein all bond pads of the second semiconductor die lie along a top surface of the second semiconductor die.

7. The semiconductor package according to claim 1 , wherein all bond pads of the second semiconductor die lie along a top surface of the second semiconductor die.

8. The semiconductor package of according to claim 1 , wherein an entirety of a bottom surface of the second semiconductor die is planar and exposed through the second encapsulant material.

9. The semiconductor package according to claim 1 , wherein the second encapsulant material further encapsulates an entirety of a bottom surface of the second semiconductor die.

10. The semiconductor package according to claim 1 , wherein:

the bottom side of the signal distribution structure comprises a bottom pad; and

the electrical interconnect is coupled to the bottom pad of the signal distribution structure.

11. The semiconductor package accordingly to claim 1 , wherein a portion of the upper dielectric layer lies between the first conductive layer and the die bottom surface.

12. A semiconductor package, comprising:

a signal distribution structure comprising:

an upper dielectric layer comprising an upper side, the upper side providing at least a portion of a top side of the signal distribution structure;

a lower dielectric layer comprising a lower side, the lower side providing at least a portion of a bottom side of the signal distribution structure;

a central dielectric layer between the upper dielectric layer and the lower dielectric layer;

one or more first conductive layers between the upper dielectric layer and the central dielectric layer;

one or more second conductive layers between the lower dielectric layer and the central dielectric layer;

a first pad coupled through the upper dielectric layer to a first conductive layer of the one or more first conductive layers; and

a second pad on the bottom side of the signal distribution structure, the second pad coupled through the lower dielectric layer to a second conductive layer of the one or more second conductive layers;

a first semiconductor die having a die top surface, a die bottom surface opposite the die top surface, a die side surface between the die top surface and the die bottom surface, and a first bond pad on the die bottom surface;

a first conductive structure that couples the first bond pad of the first semiconductor die to the first pad of the signal distribution structure, wherein the first conductive structure bonds the first semiconductor die above the top side of the signal distribution structure, creating a space between the die bottom surface and the top side of the signal distribution structure;

an underfill that extends:

into the space between the die bottom surface of the first semiconductor die and the top side of the signal distribution structure; and

over a portion of the die side surface;

a second semiconductor die having a second bond pad on a top surface of the second semiconductor die, wherein the second bond pad of the second semiconductor die is bonded to the bottom side of the signal distribution structure;

an electrical interconnect electrically coupled to the bottom side of the signal distribution structure, wherein at least a portion of the electrical interconnect extends externally beyond an external surface of the semiconductor package and is configured to electrically couple the semiconductor package to a component external to the semiconductor package;

a first encapsulant material encapsulating at least the die top surface and a portion of the top side of the signal distribution structure;

a second conductive structure that couples the second semiconductor die to the second pad of the signal distribution structure, wherein the second conductive structure bonds the second semiconductor die below the bottom side of the signal distribution structure, creating a space between the top surface of the second semiconductor die and the bottom side of the signal distribution structure; and

a second encapsulant material encapsulating the electrical interconnect and at least side surfaces of the second semiconductor die without encapsulating at least the portion of the electrical interconnect external to the external surface of the semiconductor package, wherein the second encapsulant material underfills at least a portion of the space between the top surface of the second semiconductor die and the bottom side of the signal distribution structure and encapsulates at least a sidewall of the second conductive structure.

13. The semiconductor package according to claim 12 , wherein the underfill encapsulates and contacts the first conductive structure.

14. The semiconductor package according to claim 12 , further comprising a third semiconductor die having a third bond pad bonded to the top side of the signal distribution structure.

15. The semiconductor package according to claim 12 , wherein an entirety of a bottom surface of the second semiconductor die is planar and exposed through the second encapsulant material.

16. The semiconductor package according to claim 12 , wherein the second encapsulant material further encapsulates an entirety of a bottom surface of the second semiconductor die.

17. A method of fabricating a semiconductor package, the method comprising:

coupling a first conductive structure between a first bond pad of a first semiconductor die and a first pad of a signal distribution structure, wherein:

the first semiconductor die comprises: a die top surface, a die bottom surface opposite the die top surface, a die side surface between the die top surface and the die bottom surface, and the first bond pad on the die bottom surface;

the first conductive structure bonds the first semiconductor die above a top side of the signal distribution structure, creating a space between the die bottom surface and the top side of the signal distribution structure; and

the signal distribution structure comprises:

an upper dielectric layer comprising an upper side, the upper side providing at least a portion of the top side of the signal distribution structure;

a lower dielectric layer comprising a lower side, the lower side providing at least a portion of a bottom side of the signal distribution structure;

a central dielectric layer between the upper dielectric layer and the lower dielectric layer;

one or more first conductive layers between the upper dielectric layer and the central dielectric layer;

one or more second conductive layers between the lower dielectric layer and the central dielectric layer;

the first pad coupled through the upper dielectric layer to a first conductive layer of the one or more first conductive layers; and

a second pad on the bottom side of the signal distribution structure, the second pad coupled through the lower dielectric layer to a second conductive layer of the one or more second conductive layers;

bonding a second bond pad on a top surface of a second semiconductor die to the second pad on the bottom side of the signal distribution structure via a second conductive structure that bonds the second semiconductor die below the bottom side of the signal distribution structure, creating a space between the top surface of the second semiconductor die and the bottom side of the signal distribution structure;

forming an underfill that extends:

into the space between the die bottom surface of the first semiconductor die and the top side of the signal distribution structure; and

over a portion of the die side surface;

encapsulating with a first encapsulant material, at least the die top surface and a portion of the top side of the signal distribution structure;

electrically coupling an electrical interconnect to the bottom side of the signal distribution structure such that at least a portion of the electrical interconnect extends externally beyond an external surface of the semiconductor package and is configured to electrically couple the semiconductor package to a component external to the semiconductor package; and

applying a second encapsulant material such that the second encapsulating material encapsulates the electrical interconnect and at least side surfaces of the second semiconductor die without encapsulating at least the portion of the electrical interconnect external to the external surface of the semiconductor package, underfills at least a portion of the space between the top surface of the second semiconductor die and the bottom side of the signal distribution structure, and encapsulates at least a sidewall of the second conductive structure.

18. The method according to claim 17 , comprising electrically connecting the electrical interconnect to one or both of the first semiconductor die and the second semiconductor die.

19. The method according to claim 17 , wherein applying the second encapsulant comprises applying the second encapsulant material such that the second encapsulant material encapsulates the at least side surfaces of the second semiconductor die without encapsulating at least a portion of the electrical interconnect.

20. The method according to claim 19 , wherein at least a portion of a bottom surface of a second encapsulant formed with the second encapsulant material is coplanar with a bottom surface of the second semiconductor die.