Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins
A method of making a semiconductor device includes forming a fin in a substrate; depositing a first spacer material to form a first spacer around the fin; depositing a second spacer material to form a second spacer over the first spacer; recessing the first spacer and the second spacer; removing the first spacer; and performing an epitaxial growth process to form epitaxial growth on an end of the fin, along a sidewall of the fin, and adjacent to the fin.
1. A method of making a semiconductor device, the method comprising:
forming a pair of fins in a substrate;
forming a shallow trench isolation region around a portion of the pair of fins;
depositing a first spacer material to form a first spacer around each of the fins in the pair of fins;
depositing a second spacer material to form a second spacer over the first spacer;
recessing the first spacer and the second spacer;
removing the first spacer and a portion of the STI region under the second spacer, removing the first spacer leaving a gap between the second spacers and the fins;
performing an epitaxial growth process to form epitaxial growth on ends, sidewalls, and between fins; and
depositing a liner over the epitaxial growth.
2. The method of claim 1 , wherein the epitaxial growth on the ends of the fins is diamond-shaped.
3. The method of claim 1 , wherein the epitaxial growth on the ends of the fins has a thickness in a range from about 2 to about 10 nm.
4. The method of claim 1 , wherein the epitaxial growth between the fins has a thickness in a range from about 15 to about 30 nm.
5. The method of claim 1 , wherein the liner includes a metal silicide material.
6. The method of claim 1 , wherein the epitaxial growth has a thickness in a range from about 2 to about 10 nm.
7. The method of claim 1 , wherein the liner is a metal silicide liner.
8. The method of claim 7 , wherein the metal silicide liner wraps around all of the epitaxial growth.
9. The method of claim 8 , wherein the first spacer material is a dielectric spacer material.
10. A method of making a semiconductor device, the method comprising:
forming a pair of fins in a substrate;
forming a shallow trench isolation region around a portion of the pair of fins;
depositing a first spacer material to form a first spacer around each of the fins in the pair of fins, the first spacer material comprising a dielectric spacer material;
depositing a second spacer material to form a second spacer over the first spacer, the second spacer material comprising silicon, nitrogen, and either carbon or boron;
recessing the first spacer and the second spacer to expose an end of a fin;
removing only the first spacer and a portion of the STI region under the second spacer, leaving a gap between the second spacer and the fin;
performing an epitaxial growth process to form epitaxial growth on ends, sidewalls, and between fins; and
depositing a liner over the epitaxial growth.
11. The method of claim 10 , wherein the epitaxial growth on the ends of the fins is diamond-shaped.
12. The method of claim 10 , wherein the epitaxial growth on the ends of the fins has a thickness in a range from about 2 to about 10 nm.
13. The method of claim 10 , wherein the epitaxial growth between the fins has a thickness in a range from about 15 to about 30 nm.
14. The method of claim 10 , wherein the liner includes a metal silicide material.
15. The method of claim 10 , wherein the epitaxial growth covers the second spacers.
16. The method of claim 10 , wherein the epitaxial growth has a thickness in a range from about 2 to about 10 nm.
17. The method of claim 10 , wherein the liner is a metal silicide liner.
18. The method of claim 17 , wherein the metal silicide liner wraps around substantially all of the epitaxial growth.
19. The method of claim 18 , wherein the second spacer material is a low k dielectric material.