Methods and apparatus for wafer-level die bridge
A wafer-level bridge die is affixed with an adhesive layer to a redistribution layer (RDL) that has been temporarily bonded to a carrier. Electrical interconnects are formed on the RDL and on the bridge die and encapsulated in a first mold layer. A plurality of dies are coupled to the RDL and the bridge die such that a die is electrically connected to at least one electrical interconnect of the RDL and to at least one electrical interconnect of the bridge die. A second mold layer is formed on the first mold layer to encapsulate the plurality of dies. The temporary bond is then broken and the carrier is removed, exposing the RDL connections.
1. A method of forming a wafer level bridge die, comprising:
forming a redistribution layer (RDL);
affixing a bridge die on the RDL, the bridge die having electrical connections on an exposed surface opposite of the RDL;
forming at least one electrical interconnect on the RDL;
forming at least one electrical interconnect on the bridge die;
forming at least one first portion of at least one through mold via (TMV) on the RDL;
forming a first mold layer over the RDL and the bridge die;
forming at least one second portion of the at least one TMV;
coupling a plurality of dies to the RDL and to the bridge die such that a die is electrically connected to at least one electrical interconnect of the RDL and to at least one electrical interconnect of the bridge die; and
forming a second mold layer on the first mold layer and on the plurality of dies, the at least one TMV having an electrical connection at a top surface of the second mold layer for supporting package-on-package (PoP) electrical connections.
2. The method of claim 1 , further comprising:
forming the at least one TMV using an electroplating process.
3. The method of claim 1 , further comprising:
forming the RDL on a carrier.
4. The method of claim 1 , further comprising:
affixing the bridge die on the RDL using an adhesive between the bridge die and the RDL.
5. The method of claim 1 , further comprising:
forming at least one integrated passive device on the first mold layer; and
forming the second mold layer on the at least one integrated passive device.
6. The method of claim 1 , further comprising:
using a copper-based material to form at least one electrical interconnect on the RDL or at least one electrical interconnect on the bridge die.
7. A method of forming a wafer level bridge die, comprising:
temporarily bonding a redistribution layer (RDL) on a carrier;
affixing a bridge die on the RDL, the bridge die having electrical connections on an exposed surface opposite of the RDL;
forming at least one electrical interconnect on the RDL;
forming at least one electrical interconnect on the exposed surface of the bridge die;
forming a first mold layer on the RDL and the bridge die;
coupling a plurality of dies to the RDL and to the bridge die such that a die is electrically connected to at least one electrical interconnect of the RDL and to at least one electrical interconnect of the bridge die;
forming a second mold layer on the first mold layer and on the plurality of dies;
removing the carrier from the RDL; and
forming at least one through mold via from the RDL to a top surface of the second mold layer.
8. The method of claim 7 , further comprising:
affixing a thermal exchange layer to a top surface of at least one of the plurality of dies.
9. The method of claim 7 , further comprising:
electrically connecting the RDL to a substrate or printed circuit board.
10. The method of claim 7 , further comprising:
forming at least one integrated passive device on the first mold layer before forming the second mold layer.