Implementing deposition growth method for magnetic memory
A magnetic memory array and a method for implementing the magnetic memory array for use in Solid-State Drives (SSDs) are provided. A plurality of magnetic pillar memory cells is formed using a deposition and/or growth process to produce a magnetic memory array substantially avoiding milling of magnetic materials.
1. A method for implementing a magnetic memory array comprising:
forming a plurality of magnetic pillar memory cells that include a first magnetic conductor M 1 and a second conductor M 2 and wherein said first magnetic conductor M 1 and said second conductor M 2 are formed of a magnetic material, and said second conductor M 2 being more electrically conductive than said first magnetic conductor M 1 including:
growing said second conductor M 2 , wherein growing said second conductor M 2 includes forming said second conductor M 2 of a magnetic material;
coating said second conductor M 2 with a non-magnetic spacer layer;
growing said first magnetic conductor M 1 over said coated second conductor M 2 , wherein the first magnetic conductor M 1 has a metallic granularity;
depositing an oxide barrier over said grown first magnetic conductor M 1 forming magnetic pillar memory cells, wherein each magnetic pillar memory cell is configured to be independently programmed; and
depositing an interlayer dielectric (IDL) stack of word planes separated by a respective IDL.
2. The method as recited in claim 1 wherein forming said magnetic pillar memory cells includes providing a complementary metal oxide semiconductor (CMOS) wafer having a CMOS defined pad pattern, and growing said magnetic pillar memory cells on said CMOS defined pad pattern.
3. The method as recited in claim 2 includes treating said CMOS defined pad pattern for providing a source of growth for said plurality of magnetic pillar memory cells.
4. The method as recited in claim 1 including forming vias in said IDL stack, and forming other conductive electrical connections.
5. The method as recited in claim 1 wherein growing said second conductor M 2 and growing said first conductor M 1 includes each said first conductor M 1 and said second conductor M 2 not being patterned.
6. A method for implementing a magnetic memory array comprising:
forming a plurality of magnetic pillar memory cells that include a first magnetic conductor M 1 and a second magnetic conductor M 2 being formed of a magnetic material, and said second magnetic conductor M 2 being more electrically conductive than said first magnetic conductor M 1 including:
growing said second conductor M 2 , wherein growing said second conductor M 2 includes forming said second conductor M 2 of a non-magnetic material;
coating said second conductor M 2 with a non-magnetic spacer layer;
growing said first magnetic conductor M 1 over said coated second conductor M 2 ;
depositing an oxide barrier over said grown first magnetic conductor M 1 forming magnetic pillar memory cells, wherein the first magnetic conductor M 1 of said magnetic material has a metallic granularity enabling independent programming of each magnetic pillar memory cell; and
depositing an interlayer dielectric (IDL) stack of word planes separated by a respective IDL.
7. The method as recited in claim 6 wherein forming said magnetic pillar memory cells includes providing a complementary metal oxide semiconductor (CMOS) wafer having a CMOS defined pad pattern, and growing said magnetic pillar memory cells on said CMOS defined pad pattern.
8. The method as recited in claim 7 includes treating said CMOS defined pad pattern for providing a source of growth for said plurality of magnetic pillar memory cells.
9. The method as recited in claim 6 including forming vias in said IDL stack, and forming other conductive electrical connections.
10. The method as recited in claim 6 wherein growing said second conductor M 2 and growing said first conductor M 1 includes each said first conductor M 1 and said second conductor M 2 not being patterned.
11. A method for implementing a magnetic memory array comprising:
forming a plurality of magnetic pillar memory cells that include a first magnetic conductor M 1 being formed of a magnetic material, and a second conductor M 2 being more electrically conductive than said first magnetic conductor M 1 including:
growing said second conductor M 2 ;
coating said second conductor M 2 with a non-magnetic spacer layer;
growing said first magnetic conductor M 1 over said coated second conductor M 2 ;
depositing an oxide barrier over said grown first magnetic conductor M 1 forming magnetic pillar memory cells, wherein the first conductor M 1 of said magnetic material has a metallic granularity enabling independent programming of each magnetic pillar memory cell;
depositing an interlayer dielectric (IDL) stack of word planes separated by a respective IDL; and
sharing a bit line only by said magnetic pillar memory cells inside pillar holes.
12. The method as recited in claim 11 wherein forming said magnetic pillar memory cells includes providing a complementary metal oxide semiconductor (CMOS) wafer having a CMOS defined pad pattern, and growing said magnetic pillar memory cells on said CMOS defined pad pattern.
13. The method as recited in claim 12 includes treating said CMOS defined pad pattern for providing a source of growth for said plurality of magnetic pillar memory cells.
14. The method as recited in claim 11 including forming vias in said IDL stack, and forming other conductive electrical connections.
15. The method as recited in claim 11 wherein growing said second conductor M 2 and growing said first conductor M 1 includes each said first conductor M 1 and said second conductor M 2 not being patterned.