Forming array contacts in semiconductor memories
Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
1. An apparatus comprising:
a memory array;
a dielectric material over the memory array;
a plurality of parallel-spaced partially filled trenches in the dielectric material, wherein each parallel-spaced partially filled trench of the plurality of parallel-spaced partially filled trenches was etched to a corresponding etch out step of the plurality of partially filled trenches, wherein the plurality of parallel-spaced partially filled trenches are filled based on an etch stop layer that is at a bottom of the dielectric material, and wherein the plurality of parallel-spaced partially filled trenches taper inwardly from the top of the dielectric material to the etch stop layer;
a mask layer that covers the dielectric material and the plurality of parallel-spaced partially filled trenches; and
conductive lines over the memory array and below, in part, a bottom of the etch stop layer.
2. The apparatus of claim 1 , wherein the etch stop layer comprises a borderless nitride.
3. The apparatus of claim 1 , wherein the conductive lines in the dielectric material.
4. The apparatus of claim 3 , wherein the conductive lines are spaced in parallel to one another.
5. The apparatus of claim 1 , wherein each parallel-spaced partially filled trench of the plurality of parallel-spaced partially filled trenches is below the mask layer.
6. An apparatus comprising:
a memory array;
a dielectric material over an etch stop layer that is at a bottom of the dielectric material and over the memory array;
a plurality of parallel-spaced partially filled trenches in the dielectric material, wherein each parallel-spaced partially filled trench of the plurality of parallel-spaced partially filled trenches was etched to a corresponding etch out step of the plurality of parallel-spaced partially filled trenches, wherein the plurality of parallel-spaced partially filled trenches taper inwardly from the top of the dielectric material to the etch stop layer;
a mask layer that covers the dielectric material and the plurality of parallel-spaced partially filled trenches; and
conductive lines over the memory array and below, in part, a bottom of the etch stop layer, wherein the memory array comprises flash memory, and wherein at least one of the conductive lines corresponds to a control gate of the Flash memory.
7. An apparatus comprising:
a memory array;
an etch stop layer over the memory array;
a dielectric material over the etch stop layer over the memory array, such that the etch stop layer is at a bottom of the dielectric material;
a plurality of parallel-spaced partially filled trenches in the dielectric material, wherein the plurality of parallel-spaced partially filled trenches taper inwardly from a top of the dielectric material to the etch stop layer;
a mask layer that covers the dielectric material and the plurality of parallel-spaced partially filled trenches;
a plurality of spaced openings above the plurality of parallel-spaced partially filled trenches, wherein the plurality of spaced openings are formed until corresponding etch out steps of the plurality of parallel-spaced partially filled trenches; and
conductive lines over the memory array and below, in part, a bottom of the etch stop layer.
8. The apparatus of claim 7 , wherein each parallel-spaced partially filled trench of the plurality of parallel-spaced partially filled trenches is below the mask layer.
9. An apparatus comprising:
a plurality of conductive lines;
a plurality of active areas below the plurality of conductive lines;
a dielectric material formed around and above the plurality of conductive lines, the dielectric material having an etch stop layer that is at a bottom of the dielectric material; and
a plurality of partially filled trenches in the dielectric material, wherein the plurality of partially filled trenches are situated between and parallel to the plurality of conductive lines, wherein each partially filled trench of the plurality of partially filled trenches was etched to a corresponding etch out step of the plurality of partially filled trenches, and wherein each partially filled trench of the plurality of partially filled trenches tapers inwardly from a top of the dielectric material to the etch stop layer;
a mask layer that covers the dielectric material and the plurality of partially filled trenches; and
a plurality of spaced openings above the plurality of partially filled trenches, wherein the plurality of spaced openings are formed until the corresponding etch out step of the plurality of partially filled trenches.
10. The apparatus of claim 9 , wherein the plurality of partially filled trenches are situated above the plurality of active areas.
11. The apparatus of claim 9 , wherein the plurality of active areas comprise formed memory cells.
12. An apparatus comprising:
a plurality of conductive lines;
a plurality of active areas below the plurality of conductive lines;
a dielectric material around the plurality of conductive lines; and a plurality of partially filled trenches in the dielectric material, wherein each partially filled trench of the plurality of partially filled trenches was etched to a corresponding etch out step of the plurality of partially filled trenches, such that each partially filled trench of the plurality of partially filled trenches is filled from the etch out step to an etch stop layer at a bottom of the dielectric material, wherein each partially filled trench of the plurality of partially filled trenches tapers inwardly from a top of the dielectric material;
a mask layer that covers the dielectric material and the plurality of partially filled trenches; and
a plurality of spaced openings above the plurality of partially filled trenches, wherein the plurality of spaced openings are formed until the corresponding etch out step of the plurality of partially filled trenches.
13. An apparatus comprising:
a plurality of conductive lines;
a plurality of active areas below the plurality of conductive lines;
a dielectric material around and above the plurality of conductive lines, the dielectric material having an etch stop layer that is at a bottom of the dielectric material;
a plurality of parallel-spaced partially filled trenches in the dielectric material;
a mask layer that covers the dielectric material and the plurality of parallel-spaced partially filled trenches; and
a plurality of spaced openings above the plurality of parallel-spaced partially filled trenches, wherein the plurality of spaced openings are formed until corresponding etch out steps of the plurality of parallel-spaced partially filled trenches, and wherein each parallel-spaced partially filled trench of the plurality of parallel-spaced partially filled trenches tapers inwardly from a top of the dielectric material to the etch stop layer.
14. The apparatus of claim 13 , wherein the plurality of spaced openings extend at least partially through the dielectric material toward the plurality of active areas.