Optical sensor, signal reading method therefor, solid-state imaging device, and signal reading method therefor
One problem addressed by the present invention is to provide an optical sensor, a solid-state imaging device, and methods for reading the signals therefrom, which contribute greatly to the development of industry and the realization of a safer and more secure society. One solution according to the present invention is an optical sensor having a light-receiving element, storage capacitors that store a charge, and a transfer switch for transferring to the storage capacitors a charge generated by light input to the light-receiving element, wherein the storage capacitors are a floating diffusion capacitor and a lateral overflow integration capacitor, and the transfer switch is a non-LDD/MOS transistor, that is, a non-LDD/MOS transistor for which the impurity concentration of the drain region is reduced by 50%.
1. A signal reading method for an optical sensor comprising:
(1) a sensor portion having pixel portions, each of the pixel portions includes a light-receiving element, storage capacitors that store a charge, and a transfer switch for transferring to the storage capacitors a charge generated by light input to the light-receiving element, the storage capacitors are a floating diffusion capacitor and a lateral overflow integration capacitor, and the transfer switch is a MOS transistor;
(2) a pixel signal output line connected to each of the pixel portions; and
(3) a signal reading path connected to the pixel signal output line;
the signal reading method comprising the steps of:
(a) keeping the pixel signal output line in a floating capacitance state after resetting,
(b) while the pixel signal output line is kept in the floating capacitance state,
(b-1) forming a first pixel output signal by converting a charge of a charge amount that contributes to reading by the floating diffusion capacitor to voltage,
(b-2) forming a second pixel output signal by combining the floating diffusion capacitor and the lateral overflow integration capacitor and converting a charge of a charge amount that contributes to reading to voltage; and
(b-3) inputting these two pixel output signals to the signal reading path;
wherein the first pixel output signal is amplified in the signal reading path by a plurality of amplifiers that include at least one amplifier having an amplification factor greater than 1.
2. A signal reading method for an imaging device comprising:
(1) a plurality of pixel portions, each of the pixel portions in which a light-receiving element (PD), a transfer switch (T), an overflow switch (S) and a reset switch (R) are connected in series in that order, which have a floating diffusion capacitor (CFD) and a source follower switch (SF) connected to wiring between the transfer switch (T) and the overflow switch (S), and a lateral overflow integration capacitor (CLOFIC) connected to wiring between the overflow switch (S) and the reset switch (R), the source follower switch (SF) is a MOS transistor, and the transfer switch (T) is a MOS transistor,
(2) the light-receiving elements (PD) of the plurality of pixel portions are arranged two-dimensionally to constitute a pixel array,
(3) the plurality of pixel portions is sequentially connected to a pixel column output signal line, and
(4) the pixel column output signal line is connected to a column circuit portion; the signal reading method comprising the steps of:
(a) keeping the pixel column output signal line in a floating capacitance state after resetting,
(b) while the pixel column output signal line is kept in the floating capacitance state,
(b-1) forming a first pixel output signal by converting a charge of a charge amount that contributes to reading by the floating diffusion capacitor to voltage,
(b-2) forming a second pixel output signal by combining the floating diffusion capacitor and the lateral overflow integration capacitor and converting a charge of a charge amount that contributes to reading to voltage, and
(b-3) inputting these two pixel output signals to the column circuit portion;
wherein the first pixel output signal is amplified in the column circuit portion by a plurality of amplifiers that include at least one amplifier having an amplification factor greater than 1.