Vertical gate-all-around TFET
A vertical tunneling FET (TFET) provides low-power, high-speed switching performance for transistors having critical dimensions below 7 nm. The vertical TFET uses a gate-all-around (GAA) device architecture having a cylindrical structure that extends above the surface of a doped well formed in a silicon substrate. The cylindrical structure includes a lower drain region, a channel, and an upper source region, which are grown epitaxially from the doped well. The channel is made of intrinsic silicon, while the source and drain regions are doped in-situ. An annular gate surrounds the channel, capacitively controlling current flow through the channel from all sides. The source is electrically accessible via a front side contact, while the drain is accessed via a backside contact that provides low contact resistance and also serves as a heat sink. Reliability of vertical TFET integrated circuits is enhanced by coupling the vertical TFETs to electrostatic discharge (ESD) diodes.
1. A device, comprising:
a substrate having a first surface and a second surface opposite the first surface; and
a diode including:
a first doped well in the substrate;
a second doped well in the substrate, the second doped well partially overlapping the first doped well in an overlapping region;
a first contact on the first surface of the substrate at the first doped well, the first contact having a first portion extending away from the first surface of the substrate in a first direction and a second portion extending in a second direction transverse to the first direction, the second portion being wider than the first portion;
a second contact on the first surface of the substrate at the second doped well, the second contact having a first portion extending away from the first surface of the substrate in the first direction; and
a third contact on the second surface of the substrate.
2. The device of claim 1 , wherein the second portion of the first contact has a width that is less than a width of the first doped well.
3. The device of claim 1 , wherein the second contact includes a second portion extending in the second direction.
4. The device of claim 3 , wherein the second portion of the second contact has a width that is less than a width of the second doped well.
5. The device of claim 3 , wherein the second portion of the first contact is spaced apart from the second portion of the second contact, and the overlapping region is aligned between the second portion of the first contact and the second portion of the second contact.
6. The device of claim 1 , further including an insulating layer on the first contact and the second contact.
7. The device of claim 6 , wherein the insulating layer is on the first surface of the substrate at the first doped well.
8. The device of claim 7 , wherein the insulating layer is on the first surface of the substrate at the second doped well.
9. A device, comprising:
a substrate having a first surface and a second surface opposite the first surface in a direction;
a first doped well extending from the first surface of the substrate toward the second surface of the substrate;
a second doped well extending from the first surface of the substrate toward the second surface of the substrate, a portion of the second doped well overlapping a portion of the first doped well;
a first damascene contact having a first portion at the first doped well that extends away from the first surface of the substrate in the direction;
a second damascene contact having a first portion at the second doped well that extends away from the first surface of the substrate in the direction; and
a third contact on the second surface of the substrate.
10. The device of claim 9 , further including an insulating layer on the first damascene contact and the second damascene contact.
11. The device of claim 10 , wherein the insulating layer is on the first surface of the substrate at the first doped well and the second doped well.
12. The device of claim 9 , wherein the first damascene contact and the second damascene contact are T-shaped.
13. A method, comprising:
forming a first doped well in a substrate having a first surface and a second surface opposite the first surface;
forming a second doped well in the substrate, the second doped well partially overlapping the first doped well;
forming a first damascene contact on the first surface of the substrate at the first doped well, the first damascene contact having a first portion extending away from the first surface of the substrate in a first direction;
forming a second damascene contact on the first surface of the substrate at the second doped well, the second damascene contact having a first portion extending away from the first surface of the substrate in the first direction; and
forming a third contact on the second surface of the substrate.
14. The method of claim 13 , further including forming an insulating layer on the first surface of the substrate.
15. The method of claim 14 , wherein the forming the first damascene contact includes:
forming a first recess and exposing a first portion of the first surface of the substrate at the first well by removing a first portion of the insulating layer; and
forming the first damascene contact in the first recess.
16. The method of claim 15 , wherein forming the second damascene contact includes:
forming a second recess and exposing a second portion of the first surface of the substrate at the second well by removing a second portion of the insulating layer; and
forming the second damascene contact in the second recess.