Porous polyurethane polishing pad and process for preparing a semiconductor device by using the same
The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 μm, a specific gravity of 0.7 to 0.9 g/cm 3 , a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm 2 , an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.
1. A porous polyurethane polishing pad, which comprises
a urethane-based prepolymer;
a solid phase foaming agent in an amount of 0.5 to 10 parts by weight based on 100 parts by weight of the urethane-based prepolymer; and
a curing agent,
wherein the porous polyurethane polishing pad has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 μm, a specific gravity of 0.7 to 0.9 g/cm 3 , a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm 2 , an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.
2. The porous polyurethane polishing pad of claim 1 , wherein the solid phase foaming agent has an average particle diameter of 10 to 60 μm.
3. The porous polyurethane polishing pad of claim 1 , which has an AFM hardness of the polishing surface of 50 to 150 MPa.
4. The porous polyurethane polishing pad of claim 1 , which has an AFM square root mean roughness of the polishing surface of 30 to 110 nm.
5. The porous polyurethane polishing pad of claim 1 , wherein the polishing pad comprise a number of open pores exposed to the outside, the open pores comprise a first open pore and a second open pore that are adjacent to each other and spaced from each other, and the polishing surface is disposed between the first open pore and the second open pore.
6. The porous polyurethane polishing pad of claim 5 , wherein the area of the polishing surface is 30 to 70% of the total area of the upper surface of the polishing pad.
7. The porous polyurethane polishing pad of claim 5 , wherein the open pores have an average diameter of 10 to 30 μm and an average depth of 8 to 28 μm.
8. A process for preparing a semiconductor device, which comprises providing a porous polyurethane polishing pad; disposing an object to be polished on the polishing pad; and relatively rotating the object to be polished with respect to the polishing pad to polish the object,
wherein the polishing pad comprises a urethane-based prepolymer, a solid phase foaming agent in an amount of 0.5 to 10 parts by weight based on 100 parts by weight of the urethane-based prepolymer, and a curing agent; and
wherein the polishing pad has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 μm, a specific gravity of 0.7 to 0.9 g/cm 3 , a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm 2 , an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with the object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.
9. The process for preparing a semiconductor device of claim 8 , wherein the object to be polished comprises a metal layer, and the metal layer is in direct contact with the polishing surface, so that the metal layer is polished.
10. The process for preparing a semiconductor device of claim 9 , the metal layer comprises tungsten.