Semiconductor device and method
In an embodiment, a device includes: a first device including: an integrated circuit device having a first connector; a first photosensitive adhesive layer on the integrated circuit device; and a first conductive layer on the first connector, the first photosensitive adhesive layer surrounding the first conductive layer; a second device including: an interposer having a second connector; a second photosensitive adhesive layer on the interposer, the second photosensitive adhesive layer physically connected to the first photosensitive adhesive layer; and a second conductive layer on the second connector, the second photosensitive adhesive layer surrounding the second conductive layer; and a conductive connector bonding the first and second conductive layers, the conductive connector surrounded by an air gap.
1. A method comprising:
forming a first opening in a first photosensitive adhesive layer, the first photosensitive adhesive layer being adjacent a first side of a first integrated circuit device;
plating a first reflowable layer in the first opening;
forming a second opening in a second photosensitive adhesive layer, the second photosensitive adhesive layer being adjacent a first side of a second integrated circuit device;
plating a second reflowable layer in the second opening;
pressing the first and second photosensitive adhesive layers together, thereby physically connecting the first and second integrated circuit devices; and
reflowing the first and second reflowable layers, thereby forming a conductive connector electrically connecting the first and second integrated circuit devices.
2. The method of claim 1 , further comprising:
encapsulating the first integrated circuit device with a molding compound, the molding compound being adjacent the first side of the second integrated circuit device;
singulating the first integrated circuit device;
forming a redistribution structure adjacent a second side of the second integrated circuit device; and
forming conductive balls on the redistribution structure.
3. The method of claim 2 , further comprising:
bonding the second integrated circuit device to a package substrate using the conductive balls.
4. The method of claim 1 , further comprising:
forming a third opening in a third photosensitive adhesive layer, the third photosensitive adhesive layer being adjacent a second side of the first integrated circuit device;
plating a third reflowable layer in the third opening; and
physically connecting a third integrated circuit device to the first integrated circuit device using the third photosensitive adhesive layer and the third reflowable layer.
5. The method of claim 1 , further comprising:
forming first vias on the first side of the second integrated circuit device;
forming a redistribution structure adjacent a second side of the second integrated circuit device, the redistribution structure electrically connected to the first vias;
forming conductive connectors on the redistribution structure; and
singulating the first integrated circuit device and the redistribution structure.
6. The method of claim 5 , further comprising:
forming second vias adjacent the first and second integrated circuit devices; and
encapsulating the first vias and the second vias with a molding compound.
7. The method of claim 1 , wherein after reflowing the first reflowable layer, the conductive connector is surrounded by an air gap.
8. A method comprising:
encapsulating a plurality of first integrated circuit devices with a first molding compound;
forming a first photosensitive adhesive layer over the first integrated circuit devices;
patterning a first opening in the first photosensitive adhesive layer;
plating a first conductive layer in the first opening;
plating a first reflowable layer on the first conductive layer, a combined thickness of the first conductive layer and the first reflowable layer being less than a first thickness of the first photosensitive adhesive layer, the first conductive layer and the first reflowable layer electrically connected to the first integrated circuit devices;
pressing a second integrated circuit device to the first photosensitive adhesive layer to physically connect the first and second integrated circuit devices; and
reflowing the first reflowable layer to form a conductive connector electrically connecting the first and second integrated circuit devices.
9. The method of claim 8 , further comprising:
forming a first redistribution structure over the first integrated circuit devices, the first photosensitive adhesive layer being a topmost layer of the first redistribution structure, the second integrated circuit device bonded to the first redistribution structure after reflowing the first reflowable layer.
10. The method of claim 9 , further comprising:
placing the first integrated circuit devices on a second redistribution structure.
11. The method of claim 10 , further comprising:
forming vias extending through the first molding compound, the vias electrically connecting the first and second redistribution structures.
12. The method of claim 8 , further comprising:
encapsulating the second integrated circuit device with a second molding compound; and
forming a first redistribution structure over the second integrated circuit device and the second molding compound.
13. The method of claim 12 , further comprising:
forming vias extending through the second molding compound, the vias electrically connecting the first redistribution structure and the first integrated circuit devices.
14. The method of claim 8 , wherein after reflowing the first reflowable layer, the conductive connector is surrounded by an air gap.
15. A method comprising:
forming a first photosensitive adhesive layer on an integrated circuit device;
patterning a first opening in the first photosensitive adhesive layer, the first opening exposing a first connector of the integrated circuit device;
plating a first conductive layer in the first opening on the first connector;
plating a first reflowable layer in the first opening on the first conductive layer, a first combined thickness of the first conductive layer and the first reflowable layer being less than a first thickness of the first photosensitive adhesive layer;
forming a second photosensitive adhesive layer on an interposer;
patterning a second opening in the second photosensitive adhesive layer, the second opening exposing a second connector of the interposer;
plating a second conductive layer in the second opening on the second connector;
plating a second reflowable layer in the second opening on the second conductive layer, a second combined thickness of the second conductive layer and the second reflowable layer being different from a second thickness of the second photosensitive adhesive layer;
pressing the first and second photosensitive adhesive layers together to physically couple the integrated circuit device and the interposer; and
reflowing the first and second reflowable layers to form a conductive connector electrically coupling the integrated circuit device and the interposer.
16. The method of claim 15 , wherein the second combined thickness is greater than the second thickness of the second photosensitive adhesive layer.
17. The method of claim 15 , wherein the second combined thickness is less than the second thickness of the second photosensitive adhesive layer.
18. The method of claim 15 , wherein after reflowing the first and second reflowable layers, the conductive connector is surrounded by an air gap.
19. The method of claim 18 , wherein a height of the air gap is less than the first combined thickness and the second combined thickness.
20. The method of claim 15 , wherein a first width of the first opening is different from a second width of the second opening.