Insulating film, method for manufacturing semiconductor device, and semiconductor device
In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm 2 and lower than or equal to 0.5 W/cm 2 is supplied to an electrode provided in the treatment chamber.
1. A semiconductor device comprising:
an insulating film;
an oxide semiconductor film over the insulating film;
a source electrode and a drain electrode over the oxide semiconductor film;
a gate insulating film over the source electrode and the drain electrode;
a gate electrode over the gate insulating film;
a first wiring electrically connected to the source electrode; and
a second wiring electrically connected to the drain electrode,
wherein the oxide semiconductor film comprises indium, gallium, and zinc,
wherein the oxide semiconductor film includes a first region and a second region,
wherein the first region overlaps with the gate electrode, and
wherein a concentration of a dopant in the first region is lower than a concentration of the dopant in the second region.
2. The semiconductor device according to claim 1 , wherein the insulating film includes oxygen which is released by heating.
3. The semiconductor device according to claim 1 , wherein in the oxide semiconductor film, an indium concentration is larger than a gallium concentration.
4. The semiconductor device according to claim 1 , wherein an atomic ratio of indium, gallium, and zinc of the oxide semiconductor film is 4:2:3.
5. The semiconductor device according to claim 1 , wherein the oxide semiconductor film includes a c-axis aligned crystal part.
6. The semiconductor device according to claim 1 , wherein each of the source electrode and the drain electrode comprises a transparent conductive material.
7. The semiconductor device according to claim 6 , wherein the transparent conductive material comprises one of indium oxide, tin oxide, and zinc oxide.
8. A semiconductor device comprising:
an insulating film;
a first oxide semiconductor film over the insulating film;
a second oxide semiconductor film over the first oxide semiconductor film;
a source electrode and a drain electrode over the second oxide semiconductor film;
a gate insulating film over the source electrode and the drain electrode;
a gate electrode over the gate insulating film;
a first wiring electrically connected to the source electrode; and
a second wiring electrically connected to the drain electrode,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc,
wherein the second oxide semiconductor film includes a first region and a second region,
wherein the first region overlaps with the gate electrode, and
wherein a concentration of a dopant in the first region is lower than a concentration of the dopant in the second region.
9. The semiconductor device according to claim 8 , wherein the insulating film includes oxygen which is released by heating.
10. The semiconductor device according to claim 8 , wherein an atomic ratio of indium, gallium, and zinc of one of the first oxide semiconductor film and the second oxide semiconductor film is 4:2:3.
11. The semiconductor device according to claim 8 , wherein an atomic ratio of indium, gallium, and zinc of one of the first oxide semiconductor film and the second oxide semiconductor film is 1:3:2.
12. The semiconductor device according to claim 8 , wherein one of the first oxide semiconductor film and the second oxide semiconductor film includes a c-axis aligned crystal part.
13. The semiconductor device according to claim 8 , wherein each of the source electrode and the drain electrode comprises a transparent conductive material.
14. The semiconductor device according to claim 13 , wherein the transparent conductive material comprises one of indium oxide, tin oxide, and zinc oxide.
15. A semiconductor device comprising:
a first gate electrode;
a first insulating film over the first gate electrode;
an oxide semiconductor film over the first insulating film;
a source electrode and a drain electrode over the oxide semiconductor film;
a second insulating film over the source electrode and the drain electrode;
a second gate electrode over the second insulating film;
a first wiring electrically connected to the source electrode; and
a second wiring electrically connected to the drain electrode,
wherein the oxide semiconductor film comprises indium, gallium, and zinc,
wherein the oxide semiconductor film includes a first region and a second region,
wherein the first region overlaps with the second gate electrode, and
wherein a concentration of a dopant in the first region is lower than a concentration of the dopant in the second region.
16. The semiconductor device according to claim 15 , wherein the first insulating film includes oxygen which is released by heating.
17. The semiconductor device according to claim 15 , wherein in the oxide semiconductor film, an indium concentration is larger than a gallium concentration.
18. The semiconductor device according to claim 15 , wherein an atomic ratio of indium, gallium, and zinc of the oxide semiconductor film is 4:2:3.
19. The semiconductor device according to claim 15 , wherein the oxide semiconductor film includes a c-axis aligned crystal part.
20. The semiconductor device according to claim 15 , wherein each of the source electrode and the drain electrode comprises a transparent conductive material.
21. The semiconductor device according to claim 20 , wherein the transparent conductive material comprises one of indium oxide, tin oxide, and zinc oxide.