Random telegraph signal noise reduction scheme for semiconductor memories
Embodiments are provided that include a memory device having a memory array including a plurality of access lines and data lines. The memory device further includes a circuit coupled to the plurality of access lines and configured to provide consecutive pulses to a selected one of the plurality of access lines. Each pulse of the consecutive pulses includes a first voltage and a second voltage. The first voltage is greater in magnitude than the second voltage, and the first voltage is applied for a shorter duration than the second voltage.
1. A memory device comprising:
a memory array including a plurality of access lines and data lines; and
a circuit coupled to the plurality of access lines and configured to provide consecutive pulses to a selected one of the plurality of access lines, wherein each pulse of the consecutive pulses comprises:
a first voltage; and
a second voltage, wherein the first voltage is greater in magnitude than the second voltage, and wherein the first voltage is applied for a shorter duration than the second voltage,
wherein the circuit is configured to provide the consecutive pulses to the selected one of the plurality of access lines during an operation.
2. The memory device of claim 1 , wherein each pulse of the consecutive pulses further comprises a third voltage, wherein the third voltage is provided after the first voltage, and wherein the third voltage is less than the second voltage in magnitude.
3. The memory device of claim 2 , wherein the third voltage is approximately 0 volts.
4. The memory device of claim 1 , wherein the operation is a read operation, and wherein a magnitude of the second voltage is approximately 1.0 volt.
5. The memory device of claim 1 , wherein the operation is a verify operation, and wherein a magnitude of the second voltage is approximately 1.5 volt.
6. The memory device of claim 1 , wherein the circuit is configured to determine a state of the memory array after providing the consecutive pulses.
7. A system, comprising:
a memory device, comprising:
a plurality of memory cells electrically coupled together via a plurality of access lines and a plurality of data lines; and
a regulatory circuit coupled to the plurality of access lines and configured to provide a first voltage to a selected access line of the plurality of access lines and to provide a second voltage to the selected access line during an operation, wherein the second voltage is approximately between twenty percent and thirty percent in magnitude of the first voltage, and wherein the first voltage is a trap voltage.
8. The system of claim 7 , wherein the regulatory circuit is configured to provide the first voltage to the selected memory cell prior to the operation.
9. The system of claim 7 , wherein the magnitude of the first voltage is approximately 5 volts.
10. The system of claim 7 , wherein the regulatory circuit is configured to provide the second voltage for a longer time period than the first voltage.
11. The system of claim 7 , wherein the operation is a read operation and wherein the second voltage is approximately 1.0 volt.
12. The system of claim 7 , wherein the operation is a verify operation and wherein the second voltage is approximately 1.5 volt.
13. The system of claim 7 , wherein the trap voltage is configured to fill a trap site with electrons.
14. A flash memory device, comprising
a memory cell comprising a control gate, wherein the flash memory device is configured to apply a multi-level pulse to the control gate of the memory cell, wherein the multi-level pulse comprises:
a first voltage level;
a first transition of the first voltage level directly to a second voltage level; and
a second transition of the second voltage level to a third voltage level, wherein the first voltage level and the second voltage level are higher in magnitude than the third voltage level, and where the first voltage level is applied to the control gate of the memory cell for a shorter time period than the second voltage level and the third voltage level.
15. The flash memory device of claim 14 , wherein the second voltage level is a read or verify voltage and the third voltage level is approximately 0 volts.
16. The flash memory device of claim 15 , wherein the second voltage level is approximately 1 or 1.5 volts.
17. The flash memory device of claim 14 , wherein the first voltage level is a trap voltage level configured to fill a trap site with electrons.
18. The flash memory device of claim 14 , wherein the first voltage level comprises an excited pulse having a magnitude of approximately 5 volts.
19. The flash memory device of claim 14 , wherein the flash memory device is configured to determine a state of the memory cell after applying the multi-level pulse.