Integrated circuit package and method of forming same

1. A method comprising:

stacking a plurality of integrated circuit dies on a wafer to form a die stack;

performing a bonding process on the die stack, the bonding process mechanically and electrically connecting adjacent integrated circuit dies of the die stack to each other;

forming a dam structure over the wafer, the dam structure surrounding the die stack;

forming a first encapsulant over the wafer and between the die stack and the dam structure, the first encapsulant filling gaps between the adjacent integrated circuit dies of the die stack; and

forming a second encapsulant over the wafer, the second encapsulant surrounding the die stack, the first encapsulant and the dam structure.

2. The method of claim 1 , further comprising, before stacking the plurality of integrated circuit dies on the wafer, attaching the wafer to a carrier.

3. The method of claim 1 , wherein performing the bonding process comprises performing a solder reflow process.

4. The method of claim 1 , wherein stacking the plurality of integrated circuit dies on the wafer comprises dipping each of the plurality of integrated circuit dies in a flux material before placing each of the plurality of integrated circuit dies on the wafer.

5. The method of claim 1 , wherein performing the bonding process on the die stack comprises forming a plurality of connector joints between the adjacent integrated circuit dies of the die stack.

6. The method of claim 1 , wherein the dam structure is an annular structure.

7. The method of claim 6 , wherein the die stack and the first encapsulant are disposed in an opening of the dam structure.

8. A method comprising:

placing a first integrated circuit die on a wafer, the wafer comprising first connectors on a first side of the wafer, the first integrated circuit die comprising second connectors on a first side of the first integrated circuit die and third connectors on a second side of the first integrated circuit die, the first side of the first integrated circuit die being opposite the second side of the first integrated circuit die, the first connectors being in contact with the second connectors;

placing a second integrated circuit die on the first integrated circuit die, the second integrated circuit die comprising fourth connectors on a first side of the second integrated circuit die and fifth connectors on a second side of the second integrated circuit die, the first side of the second integrated circuit die being opposite the second side of the second integrated circuit die, the third connectors being in contact with the fourth connectors;

performing a bonding process on the first integrated circuit die and the second integrated circuit die, the bonding process bonding the first connectors and the second connectors to form first connector joints, the bonding process bonding the third connectors and the fourth connectors to form second connector joints;

forming a dam structure over the wafer, the dam structure surrounding the first integrated circuit die and the second integrated circuit die;

forming a first encapsulant over the wafer and around the first connector joints and the second connector joints; and

forming a second encapsulant over the wafer, the second encapsulant surrounding the first integrated circuit die, the second integrated circuit die, the first encapsulant and the dam structure.

9. The method of claim 8 , wherein performing the bonding process comprises performing a solder reflow process on the first connectors, the second connectors, the third connectors and the fourth connectors.

10. The method of claim 8 , wherein the bonding process merges a first solder layer of each of the first connectors with a second solder layer of a respective one of the second connectors to form a first single solder layer.

11. The method of claim 10 , wherein the bonding process merges a third solder layer of each of the third connectors with a fourth solder layer of a respective one of the fourth connectors to form a second single solder layer.

12. The method of claim 8 , further comprising, before placing the first integrated circuit die on the wafer, dipping the first integrated circuit die in a flux material.

13. The method of claim 12 , further comprising, before placing the second integrated circuit die on the wafer, dipping the second integrated circuit die in the flux material.

14. The method of claim 8 , wherein a first sidewall of the dam structure is in contact with the first encapsulant, wherein a second sidewall of the dam structure is in contact with the second encapsulant, and wherein the first sidewall of the dam structure is opposite the second sidewall of the dam structure.

15. A package comprising:

a substrate;

a dam structure over the substrate, the dam structure being an annular structure;

a die stack over the substrate and within an opening of the dam structure, the die stack comprising a plurality of integrated circuit dies and connector joints between adjacent integrated circuit dies of the plurality of integrated circuit dies;

a first encapsulant extending along sidewalls of the plurality of integrated circuit dies, the first encapsulant surrounding the connector joints; and

a second encapsulant surrounding the die stack, the first encapsulant and the dam structure.

16. The package of claim 15 , wherein the first encapsulant fills the opening of the dam structure.

17. The package of claim 15 , wherein a first sidewall of the dam structure is in contact with the first encapsulant, wherein a second sidewall of the dam structure is in contact with the second encapsulant, and wherein the first sidewall of the dam structure is opposite the second sidewall of the dam structure.

18. The package of claim 15 , wherein the first encapsulant has sloped sidewalls.

19. The package of claim 15 , wherein a topmost surface of the die stack is level with a topmost surface of the second encapsulant.

20. The package of claim 15 , wherein a sidewall of the second encapsulant is coplanar with a sidewall of the substrate.