Semiconductor device
A semiconductor device comprising a pixel portion comprising a capacitor and a transistor is provided. The capacitor comprises a first oxide semiconductor film and a transparent conductive material. The transistor comprises a second oxide semiconductor film, a source electrode, and a drain electrode. The transistor is electrically connected to the capacitor. The capacitor is provided to overlap with a first opening portion in an insulating film and a second opening portion in an organic resin film. The transparent conductive material comprises a region over the organic resin film. The second oxide semiconductor film comprises a channel formation region and a first region outside the channel formation region. Each of a carrier density of the first oxide semiconductor film and a carrier density of the first region is higher than a carrier density of the channel formation region.
1. A semiconductor device comprising a pixel portion, the pixel portion comprising:
a capacitor comprising:
a first oxide semiconductor film; and
a transparent conductive material comprising a region overlapping with the first oxide semiconductor film,
a transistor comprising:
a second oxide semiconductor film;
a source electrode electrically connected to the second oxide semiconductor film; and
a drain electrode electrically connected to the second oxide semiconductor film,
an insulating film over the source electrode and the drain electrode; and
an organic resin film over the insulating film,
wherein the transistor is electrically connected to the capacitor,
wherein the capacitor is provided to overlap with a first opening portion in the insulating film and a second opening portion in the organic resin film,
wherein the transparent conductive material comprises a region over the organic resin film,
wherein the second oxide semiconductor film comprises a channel formation region and a first region outside the channel formation region,
wherein each of a carrier density of the first oxide semiconductor film and a carrier density of the first region is higher than a carrier density of the channel formation region.
2. The semiconductor device according to claim 1 ,
wherein the second oxide semiconductor film further comprises a second region outside the first region.
3. The semiconductor device according to claim 1 ,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc.
4. A semiconductor device comprising a pixel portion, the pixel portion comprising:
a capacitor comprising:
a first oxide semiconductor film; and
a transparent conductive material comprising a region overlapping with the first oxide semiconductor film,
a transistor comprising:
a second oxide semiconductor film;
a source electrode electrically connected to the second oxide semiconductor film; and
a drain electrode electrically connected to the second oxide semiconductor film,
an insulating film over the source electrode and the drain electrode; and
an organic resin film over the insulating film,
wherein the transistor is electrically connected to the capacitor,
wherein the capacitor is provided to overlap with a first opening portion in the insulating film and a second opening portion in the organic resin film,
wherein the transparent conductive material comprises a region over the organic resin film,
wherein the second oxide semiconductor film comprises a channel formation region and a first region outside the channel formation region,
wherein each of resistance of the first oxide semiconductor film and resistance of the first region is lower than resistance of the channel formation region.
5. The semiconductor device according to claim 4 ,
wherein the second oxide semiconductor film further comprises a second region outside the first region.
6. The semiconductor device according to claim 4 ,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc.
7. A semiconductor device comprising a pixel portion, the pixel portion comprising:
a capacitor comprising:
a first oxide semiconductor film; and
a transparent conductive material comprising a region overlapping with the first oxide semiconductor film,
a transistor comprising:
a second oxide semiconductor film;
a source electrode electrically connected to the second oxide semiconductor film; and
a drain electrode electrically connected to the second oxide semiconductor film,
an insulating film over the source electrode and the drain electrode; and
an organic resin film over the insulating film,
wherein the transistor is electrically connected to the capacitor,
wherein the capacitor is provided to overlap with a first opening portion in the insulating film and a second opening portion in the organic resin film,
wherein the transparent conductive material comprises a region over the organic resin film,
wherein the second oxide semiconductor film comprises a channel formation region and a first region outside the channel formation region,
wherein each of conductivity of the first oxide semiconductor film and a conductivity of the first region is higher than conductivity of the channel formation region.
8. The semiconductor device according to claim 7 ,
wherein the second oxide semiconductor film further comprises a second region outside the first region.
9. The semiconductor device according to claim 7 ,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc.
10. A semiconductor device comprising:
a transistor comprising:
a first oxide semiconductor film;
a gate insulating film over the first oxide semiconductor film;
a gate electrode over the gate insulating film;
a source electrode electrically connected to the first oxide semiconductor film; and
a drain electrode electrically connected to the first oxide semiconductor film, and
a capacitor comprising:
a second oxide semiconductor film; and
a transparent conductive material comprising a region overlapping with the second oxide semiconductor film,
wherein the capacitor comprises a region not overlapping with the gate insulating film,
wherein the transparent conductive material is electrically connected to one of the source electrode and the drain electrode,
wherein the first oxide semiconductor film comprises a channel formation region, a first region outside the channel formation region, and a second region outside the first region,
wherein the first region overlaps with the gate insulating film and does not overlap with the gate electrode,
wherein the second region does not overlap with the gate insulating film, the gate electrode, the source electrode, and the drain electrode, and
wherein a carrier density of the first region and a carrier density of the second region are higher than a carrier density of the channel formation region.
11. The semiconductor device according to claim 10 ,
wherein the carrier density of the second region is higher than the carrier density of the first region.
12. The semiconductor device according to claim 10 ,
wherein the first oxide semiconductor film is isolated from the second oxide semiconductor film.
13. The semiconductor device according to claim 10 ,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc.
14. The semiconductor device according to claim 10 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film comprises the same material, and
wherein the first oxide semiconductor film and the second oxide semiconductor film are provided in the same layer.
15. A semiconductor device comprising:
a transistor comprising:
a first oxide semiconductor film;
a gate insulating film over the first oxide semiconductor film;
a gate electrode over the gate insulating film;
a source electrode electrically connected to the first oxide semiconductor film; and
a drain electrode electrically connected to the first oxide semiconductor film, and
a capacitor comprising:
a second oxide semiconductor film; and
a transparent conductive material comprising a region overlapping with the second oxide semiconductor film,
wherein the capacitor comprises a region not overlapping with the gate insulating film,
wherein the transparent conductive material is electrically connected to one of the source electrode and the drain electrode,
wherein the first oxide semiconductor film comprises a channel formation region, a first region outside the channel formation region, and a second region outside the first region,
wherein the first region overlaps with the gate insulating film and does not overlap with the gate electrode,
wherein the second region does not overlap with the gate insulating film, the gate electrode, the source electrode, and the drain electrode, and
wherein resistance of the first region and resistance of the second region are lower than resistance of the channel formation region.
16. The semiconductor device according to claim 15 ,
wherein the resistance of the second region is lower than the resistance of the first region.
17. The semiconductor device according to claim 15 ,
wherein the first oxide semiconductor film is isolated from the second oxide semiconductor film.
18. The semiconductor device according to claim 15 ,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc.
19. The semiconductor device according to claim 15 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film comprises the same material, and
wherein the first oxide semiconductor film and the second oxide semiconductor film are provided in the same layer.
20. A semiconductor device comprising:
a transistor comprising:
a first oxide semiconductor film;
a gate insulating film over the first oxide semiconductor film;
a gate electrode over the gate insulating film;
a source electrode electrically connected to the first oxide semiconductor film; and
a drain electrode electrically connected to the first oxide semiconductor film, and
a capacitor comprising:
a second oxide semiconductor film; and
a transparent conductive material comprising a region overlapping with the second oxide semiconductor film,
wherein the capacitor comprises a region not overlapping with the gate insulating film,
wherein the transparent conductive material is electrically connected to one of the source electrode and the drain electrode,
wherein the first oxide semiconductor film comprises a channel formation region, a first region outside the channel formation region, and a second region outside the first region,
wherein the first region overlaps with the gate insulating film and does not overlap with the gate electrode,
wherein the second region does not overlap with the gate insulating film, the gate electrode, the source electrode, and the drain electrode, and
wherein a conductivity of the first region and a conductivity of the second region are higher than a conductivity of the channel formation region.
21. The semiconductor device according to claim 20 ,
wherein the conductivity of the second oxide semiconductor film is higher than the conductivity of the channel formation region, and
wherein the conductivity of the second region is higher than the conductivity of the first region.
22. The semiconductor device according to claim 20 ,
wherein the first oxide semiconductor film is isolated from the second oxide semiconductor film.
23. The semiconductor device according to claim 20 ,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc.
24. The semiconductor device according to claim 20 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film comprises the same material, and
wherein the first oxide semiconductor film and the second oxide semiconductor film are provided in the same layer.