Optical stack deposition and on-board metrology
A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.
1. A processing tool, comprising:
a first transfer chamber;
a second transfer chamber coupled to the first transfer chamber, wherein one or more processing chambers are coupled to the first transfer chamber or the second transfer chamber; and
an on-board metrology unit disposed between the first transfer chamber and the second transfer chamber, wherein the first transfer chamber, the second transfer chamber, and the on-board metrology unit are disposed in an enclosed environment, wherein the on-board metrology unit is configured to:
measure one or more optical properties of one or more layers of an optical stack;
determine any errors of the one or more layers based on the one or more measured optical properties; and
provide real-time optical response feedback to the processing tool, wherein the processing tool is configured to tune at least one of a process engineering knob and a hardware engineering knob disposed on the processing tool based on the feedback from the on-board metrology unit to compensate for the errors detected in a measured layer in subsequently deposited layers.
2. The processing tool of claim 1 , wherein the on-board metrology unit comprises a reflectometer.
3. The processing tool of claim 1 , wherein the on-board metrology unit comprises an ellipsometer.
4. The processing tool of claim 1 , wherein the one or more optical properties are selected from the group consisting of thickness, optical reflectance spectrum, optical transmittance spectrum, optical absorption spectrum, refractive index, distinction coefficient, composition, wafer bow, and stress.
5. The processing tool of claim 1 , wherein at least one processing chamber of the one or more processing chambers coupled to the first transfer chamber or the second transfer chamber is a physical vapor deposition chamber.
6. The processing tool of claim 1 , wherein at least one processing chamber of the one or more processing chambers coupled to the first transfer chamber or the second transfer chamber is a chemical vapor deposition chamber.
7. A method of forming an optical stack, comprising:
depositing a first layer on a substrate in a first processing chamber;
measuring one or more properties of the first layer using an on-board metrology unit, wherein the on-board metrology unit is configured to provide feedback to a processing tool;
determining one or more errors of the first layer for correction in subsequent layers;
tuning at least one of a process engineering knob and a hardware engineering knob disposed on the processing tool to compensate for the errors detected in the first layer based on the feedback from the on-board metrology unit;
depositing a second layer on the first layer in a second processing chamber; and
measuring one or more properties of the second layer using the on-board metrology unit, wherein the first processing chamber, the second processing chamber, and the on-board metrology unit are disposed in enclosed environment.
8. The method of claim 7 , wherein the on-board metrology unit comprises one or more of a reflectometer and an ellipsometer.
9. The method of claim 7 , wherein the one or more properties are selected from the group consisting of thickness, optical reflectance spectrum, optical transmittance spectrum, optical absorption spectrum, refractive index, distinction coefficient, composition, wafer bow, and stress.
10. The method of claim 7 , wherein material of the first layer has a different refractive index than material of the second layer.
11. The method of claim 7 , further comprising:
depositing one or more additional layers on the second layer in the first processing chamber or the second processing chamber,
wherein each time an additional layer is deposited, one or more properties of the additional layer are measured using the on-board metrology unit and one or more errors of the additional layer are determined for correction in subsequent additional layers.
12. The method of claim 7 , further comprising:
determining one or more errors of the second layer for correction in subsequent layers;
depositing a third layer on the second layer in a third processing chamber; and
measuring one or more properties of the third layer using the on-board metrology unit.
13. A processing tool, comprising:
a factory interface coupled to one or more front opening unified pods;
a first transfer chamber coupled to the factory interface, the first transfer chamber comprising a first set of robotic arms;
a second transfer chamber coupled to the first transfer chamber, the second transfer chamber comprising a second set of robotic arms;
a plurality of chambers coupled to the first transfer chamber or the second transfer chamber, the plurality of chambers comprising a first plurality of processing chambers and a plurality of support chambers;
an on-board metrology unit disposed between the first transfer chamber and the second transfer chamber, wherein the first transfer chamber, the second transfer chamber, and the on-board metrology unit are disposed in a vacuum environment, wherein the on-board metrology unit is configured to:
measure one or more optical properties of one or more layers of an optical stack;
determine any errors of the one or more layers based on the one or more measured optical properties; and
provide real-time optical response feedback to the processing tool based on the one or more measured optical properties, wherein the processing tool is configured to tune at least one of a process engineering knob and a hardware engineering knob disposed on the processing tool based on the feedback from the on-board metrology unit to compensate for the errors detected in a measured layer in subsequently deposited layers.
14. The processing tool of claim 13 , wherein the on-board metrology unit comprises a reflectometer.
15. The processing tool of claim 13 , wherein the on-board metrology unit comprises an ellipsometer.
16. The processing tool of claim 13 , wherein the one or more optical properties are selected from the group consisting of thickness, optical reflectance spectrum, optical transmittance spectrum, optical absorption spectrum, refractive index, distinction coefficient, composition, wafer bow, and stress.
17. The processing tool of claim 13 , wherein at least one processing chamber of the first plurality of processing chambers is a physical vapor deposition chamber.
18. The processing tool of claim 13 , wherein at least one processing chamber of the first plurality of processing chambers is a chemical vapor deposition chamber.
19. The processing tool of claim 1 , wherein at least one of the process engineering knob and the hardware engineering knob is tuned to control one or more film properties from the group consisting of uniformity, density, smoothness, optically transparency, stress, and particle count.
20. The processing tool of claim 13 , wherein at least one of the process engineering knob and the hardware engineering knob is tuned to control one or more film properties from the group consisting of uniformity, density, smoothness, optically transparency, stress, and particle count.