Porous polyurethane polishing pad and process for producing the same
Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polyurethane polishing pad can be adjusted. Thus, it is possible to provide a porous polyurethane polishing pad that has enhanced physical properties such as a proper level of withstand voltage, excellent polishing performance (i.e., polishing rate), and the like.
1. A porous polyurethane polishing pad, which is prepared from a reaction mixture comprising a urethane-based prepolymer and a curing agent,
wherein the porous polyurethane polishing pad comprises a plurality of pores,
wherein in a cross-sectional area of the polishing pad of 2 cm×2 cm and 2 mm thick the plurality of pores have an area-weighted average pore diameter (AWAPD) of 10 μm to 40 μm,
wherein in the pore size distribution of the plurality of pores based on a cross-sectional area of the polishing pad, a sum of cross-sectional areas of pores having a diameter of greater than X+10 μm is 5% to 20% based on 100% of a sum of the cross-sectional areas of the plurality of pores, and X equals the AWAPD,
wherein in the pore size distribution of the plurality of pores based on the cross-sectional area of the polishing pad, the pore diameter of the maximum peak Y is 15 μm to 40 μm, and wherein a sum of cross-sectional areas of pores having a diameter of Y−5 μm or less is 20% to 40% based on 100% of the sum of the cross-sectional areas of the plurality of pores, and
wherein the porous polyurethane polishing pad has a thickness of 1.5 mm to 2.5 mm, a specific gravity of 0.7 g/cm 3 to 0.9 g/cm 3 , a surface hardness at 25° C. of 50 shore D to 65 shore D, a tensile strength of 15 N/mm 2 to 25 N/mm 2 , an elongation of 80% to 250%, a total pore area of 30% to 60% based on the total area of the polishing pad, and a breakdown voltage of 14 kV to 23 kV.
2. The porous polyurethane polishing pad of claim 1 , wherein a sum of cross-sectional areas of first pores having a diameter of less than X−5 μm is 5% to 45%, and a sum of cross-sectional areas of second pores having a diameter of greater than X+5 μm is 10% to 45%, based on 100% of the sum of the cross-sectional areas of the plurality of pores.
3. The porous polyurethane polishing pad of claim 1 , wherein the reaction mixture further comprises a reaction rate controlling agent.
4. The porous polyurethane polishing pad of claim 3 , wherein the reaction rate controlling agent comprises at least one selected from the group consisting of triethylene diamine (TEDA), dimethyl ethanol amine (DMEA), tetramethyl butane diamine (TMBDA), 2-methyl-triethylene diamine, dimethyl cyclohexyl amine (DMCHA), triethyl amine (TEA), triisopropanol amine (TIPA), 1,4-diazabicyclo(2,2,2)octane, bis(2-methylaminoethyl) ether, trimethylaminoethylethanol amine, N,N,N,N,N″-pentamethyldiethylene triamine, dimethylaminoethyl amine, dimethylaminopropyl amine, benzyldimethyl amine, N-ethylmorpholine, N,N-dimethylaminoethylmorpholine, N,N-dimethylcyclohexyl amine, 2-methyl-2-azanorbornane, dibutyltin dilaurate, stannous octoate, dibutyltin diacetate, dioctyltin diacetate, dibutyltin maleate, dibutyltin di-2-ethylhexanoate, and dibutyltin dimercaptide.
5. The porous polyurethane polishing pad of claim 1 , wherein the curing agent comprises an amine compound, an alcohol compound, or a combination thereof.
6. The porous polyurethane polishing pad of claim 1 , which has a number of pores of 500 or more per unit area of 1 mm 2 thereof.
7. The porous polyurethane polishing pad of claim 1 , wherein the plurality of pores are derived from a mixture of at least two solid phase foaming agents or from at least one solid phase foaming agent and at least one inert gas.
8. The porous polyurethane polishing pad of claim 7 , wherein the mixture of solid phase foaming agents is a mixture of at least two solid phase foaming agents having different average particle diameter distributions.
9. A process for preparing a porous polyurethane polishing pad, which comprises:
(1) injecting a mixture comprising a urethane-based prepolymer, a curing agent, and a material for forming a plurality of pores into a mold and molding the mixture; and
(2) curing the mixture,
wherein in a cross-sectional area of the polishing pad of 2 cm×2 cm and 2 mm thick the plurality of pores have an area-weighted average pore diameter (AWAPD) of 10 μm to 40 μm,
wherein in the pore size distribution of the plurality of pores based on a cross-sectional area of the polishing pad, a sum of cross-sectional areas of pores having a diameter of greater than X+10 μm is 5% to 20% based on 100% of a sum of the cross-sectional areas of the plurality of pores, and X equals the AWAPD,
wherein in the pore size distribution of the plurality of pores based on the cross-sectional area of the polishing pad, the pore diameter Y of the maximum peak is 15 μm to 40 μm, and wherein a sum of cross-sectional areas of pores having a diameter of Y−5 μm or less is 20% to 40% based on 100% of the sum of the cross-sectional areas of the plurality of pores, and
wherein the porous polyurethane polishing pad has a thickness of 1.5 mm to 2.5 mm, a specific gravity of 0.7 g/cm 3 to 0.9 g/cm 3 , a surface hardness at 25° C. of 50 shore D to 65 shore D, a tensile strength of 15 N/mm 2 to 25 N/mm 2 , an elongation of 80% to 250%, a total pore area of 30% to 60% based on the total area of the polishing pad, and a breakdown voltage of 14 kV to 23 kV.
10. The process for preparing a porous polyurethane polishing pad of claim 9 , wherein the material for forming the plurality of pores is a mixture of at least two solid phase foaming agents, or at least one solid phase foaming agent and at least one inert gas.
11. The process for preparing a porous polyurethane polishing pad of claim 10 , wherein the mixture of solid phase foaming agents is a mixture of at least two solid phase foaming agents having different average particle diameter distributions.
12. The process for preparing a porous polyurethane polishing pad of claim 9 , wherein the mixture further comprises a reaction rate controlling agent, and
the reaction rate controlling agent is at least one selected from the group consisting of a tertiary amine-based compound and an organometallic compound.
13. The process for preparing a porous polyurethane polishing pad of claim 12 , wherein the reaction rate controlling agent comprises at least one selected from the group consisting of triethylene diamine (TEDA), dimethyl ethanol amine (DMEA), tetramethyl butane diamine (TMBDA), 2-methyl-triethylene diamine, dimethyl cyclohexyl amine (DMCHA), triethyl amine (TEA), triisopropanol amine (TIPA), 1,4-diazabicyclo(2,2,2)octane, bis(2-methylaminoethyl) ether, trimethylaminoethylethanol amine, N,N,N,N,N″-pentamethyldiethylene triamine, dimethylaminoethyl amine, dimethylaminopropyl amine, benzyldimethyl amine, N-ethylmorpholine, N,N-dimethylaminoethylmorpholine, N,N-dimethylcyclohexyl amine, 2-methyl-2-azanorbornane, dibutyltin dilaurate, stannous octoate, dibutyltin diacetate, dioctyltin diacetate, dibutyltin maleate, dibutyltin di-2-ethylhexanoate, and dibutyltin dimercaptide.
14. The process for preparing a porous polyurethane polishing pad of claim 9 , wherein a sum of cross-sectional areas of first pores having a diameter of less than X−5 μm is 5% to 45%, and a sum of cross-sectional areas of second pores having a diameter of greater than X+5 μm is 10% to 45%, based on 100% of the sum of the cross-sectional areas of the plurality of pores.