Memory device

1. A memory device comprising:

a first memory cell array including a plurality of first electrode layers stacked in a first direction, and a first semiconductor pillar extending through the plurality of first electrode layers in the first direction, the plurality of first electrode layers containing a first end portion formed into steps;

a first contact plug extending in the first direction and contacting one of the plurality of the first electrode layers at the first end portion;

a second contact plug extending in the first direction through the first memory cell array;

a second memory cell array disposed in the first direction with respect to the first memory cell array, the second memory cell array including a plurality of second electrode layers stacked in the first direction, and a second semiconductor pillar extending through the plurality of second electrode layers in the first direction, the plurality of second electrode layers containing a second end portion formed into steps;

a third contact plug extending in the first direction and contacting one of the plurality of the second electrode layers at the second end portion; and

a fourth contact plug extending in the first direction through the first memory cell array, the fourth contact plug being electrically connected to the second contact plug, wherein

the third contact plug is electrically connected to the fourth contact plug to be electrically connected to the second contact plug.

2. The device according to claim 1 , further comprising:

a first connection pad provided between the first memory cell and the second memory cell, the second contact plug being connected to the first connection pad; and

a second connection pad bonded to the first connection pad between the first memory cell and the second memory cell, the fourth contact plug being connected to the second connection pad.

3. The device according to claim 2 , further comprising:

a drive circuit electrically connected to the one of the plurality of second electrode layers via the second to fourth contact plugs, the first memory cell array being positioned between the drive circuit and the second memory cell array.

4. The device according to claim 3 , further comprising:

a fifth contact plug extending through the first memory cell; and

a second interconnection electrically connecting the first contact plug and the fifth contact plug, wherein

the drive circuit is electrically connected to the one of the plurality of first electrode layers via the first contact plug and the fifth contact plug.

5. The device according to claim 1 , further comprising:

a first interconnection electrically connecting the third and fourth contact plugs.

6. The device according to claim 1 , wherein the first and second memory cell arrays further include first and second source lines, respectively, the plurality of first electrode layers being stacked on the first source line, the plurality of second electrode layers being stacked on the second source line, the first semiconductor pillar being electrically connected to the first source line, the second semiconductor pillar being electrically connected to the second source line.

7. The device according to claim 6 , further comprising:

a first connection conductor electrically connecting the first and second source lines; and

a second connection conductor electrically connecting the first and second semiconductor pillars, wherein

the first connection conductor includes first and second connection parts, the first connection part extending through the first memory cell array, the second connection part extending through the second memory cell array, the first connection part being electrically connected to the first source line, the second connection part being electrically connected to the second source line, and

the second connection conductor includes third and fourth connection parts, the third connection part extending through the first memory cell array, the fourth connection part extending through the second memory cell array, the third connection part being electrically connected to the first semiconductor pillar, the fourth connection part being electrically connected to the second semiconductor pillar.

8. The device according to claim 7 , wherein

the first semiconductor pillar has a first end and a second end opposite to the first end, the first end of the first semiconductor pillar being electrically connected to the first source line, the second end of the first semiconductor pillar being electrically connected to the third connection part, and

the second semiconductor pillar has a first end and a second end opposite to the first end, the first end of the second semiconductor pillar being electrically connected to the second source line, the second end of the second semiconductor pillar being electrically connected to the fourth connection part.

9. The device according to claim 7 , wherein the second connection conductor further includes a third connection pad and a fourth connection pad, the third connection pad being bonded to the fourth connection pad between the first and second memory cell arrays, the third connection part being electrically connected to the third connection pad, the fourth connection part being electrically connected to the fourth connection pad.