Semiconductor device and method for manufacturing semiconductor device
A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.
1. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
an electrode over and electrically connected to the oxide semiconductor film;
an oxide insulating film over the electrode and the oxide semiconductor film; and
a nitride insulating film over and in contact with the oxide insulating film,
wherein a side end surface of the electrode comprises a step,
wherein the oxide insulating film is in contact with the oxide semiconductor film, and
wherein the oxide insulating film comprises a void portion in a region covering the side end surface of the electrode.
2. The semiconductor device according to claim 1 ,
wherein the electrode comprises a metal film containing copper.
3. The semiconductor device according to claim 1 ,
wherein the void portion is due to the step of the side end surface of the electrode.
4. The semiconductor device according to claim 1 ,
wherein the nitride insulating film covers the void portion.
5. The semiconductor device according to claim 1 ,
wherein the electrode is a source electrode or a drain electrode.
6. The semiconductor device according to claim 1 ,
wherein the oxide insulating film comprises a silicon oxide film, and
wherein the nitride insulating film comprises a silicon nitride film.
7. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film has a stacked structure comprising a first oxide semiconductor film and a second oxide semiconductor film having different compositions.
8. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
an electrode over and electrically connected to the oxide semiconductor film;
an oxide insulating film over the electrode and the oxide semiconductor film; and
a nitride insulating film over and in contact with the oxide insulating film,
wherein the electrode comprises a first conductive film and a second conductive film over and in contact with the first conductive film,
wherein a side end surface of the second conductive film is in contact with a top surface of the first conductive film,
wherein the oxide insulating film is in contact with the oxide semiconductor film and the top surface of the first conductive film, and
wherein the oxide insulating film comprises a void portion in a region covering the electrode.
9. The semiconductor device according to claim 8 ,
wherein the second conductive film is a metal film comprising copper.
10. The semiconductor device according to claim 8 ,
wherein the nitride insulating film covers the void portion.
11. The semiconductor device according to claim 8 ,
wherein the electrode is a source electrode or a drain electrode.
12. The semiconductor device according to claim 8 ,
wherein the oxide insulating film comprises a silicon oxide film, and
wherein the nitride insulating film comprises a silicon nitride film.
13. The semiconductor device according to claim 8 ,
wherein the oxide semiconductor film has a stacked structure comprising a first oxide semiconductor film and a second oxide semiconductor film having different compositions.
14. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
an electrode over and in contact with the oxide semiconductor film;
an oxide insulating film over the electrode and the oxide semiconductor film; and
a nitride insulating film over and in contact with the oxide insulating film,
wherein the oxide semiconductor film comprises indium and zinc,
wherein the electrode comprises a first conductive film and a second conductive film over and in contact with the first conductive film,
wherein an end portion of the second conductive film recedes from an end portion of the first conductive film so that a side end surface of the electrode comprises a step,
wherein the oxide insulating film is in contact with the oxide semiconductor film,
wherein the oxide insulating film comprises a void portion in a region covering the side end surface of the electrode.
15. The semiconductor device according to claim 14 ,
wherein the void portion is due to the step of the side end surface of the electrode.
16. The semiconductor device according to claim 14 ,
wherein the second conductive film is a metal film comprising copper.
17. The semiconductor device according to claim 14 ,
wherein the nitride insulating film covers the void portion.
18. The semiconductor device according to claim 14 ,
wherein the electrode is a source electrode or a drain electrode.
19. The semiconductor device according to claim 14 ,
wherein the oxide insulating film comprises a silicon oxide film, and
wherein the nitride insulating film comprises a silicon nitride film.
20. The semiconductor device according to claim 14 ,
wherein the oxide semiconductor film has a stacked structure comprising a first oxide semiconductor film and a second oxide semiconductor film having different compositions.