Reducing post-read disturb in a nonvolatile memory device
An apparatus includes a plurality of NAND strings in a block with word lines connected to cells of the NAND strings and select lines connected to select gate transistors of the NAND strings. A control circuit is configured to, after a read operation of memory cells of the block apply substantially zero volts to the global word lines to discharge the word lines to substantially zero volts. The control circuit is further configured to turn off the select gate transistors to isolate channels, turn off the block select transistors to isolate the word lines from the global word lines, and with the block select transistors turned off, apply a low positive voltage on the global word lines.
1. An apparatus, comprising:
a plurality of NAND strings in a block, each NAND string comprising a source-end select gate transistor, a drain-end select gate transistor, and memory cells between the source-end select gate transistor and the drain-end select gate transistor;
word lines connected to cells in the plurality of NAND strings, the word lines selectively coupled to global word lines by block select transistors;
select lines connected to select gate transistors in the plurality of NAND strings; and
a control circuit, the control circuit configured to, after a read operation of memory cells of the block:
apply substantially zero volts to the global word lines to discharge the word lines to substantially zero volts;
turn off the select gate transistors to isolate channels;
turn off the block select transistors to isolate the word lines from the global word lines; and
with the block select transistors turned off, apply a low positive voltage on the global word lines.
2. The apparatus of claim 1 wherein the control circuit is further configured to apply substantially zero volts to global word lines and word lines of one or more unselected blocks during the read operation and subsequently apply the low positive voltage on the global word lines of the one or more unselected blocks while block select transistors of the one or more unselected blocks are turned off.
3. The apparatus of claim 2 wherein a read voltage applied to global word lines and word lines during a read operation is in the range of 7.0 to 9.0 volts and the low positive voltage is in the range of 1.5-2.5 volts.
4. The apparatus of claim 1 wherein the control circuit is configured to apply substantially zero volts to the global word lines throughout a period of time after the read operation and to maintain a high voltage to gates of the block select transistors throughout the period of time to discharge the word lines to substantially zero volts.
5. The apparatus of claim 1 wherein the control circuit is further configured to keep select gate transistors turned on after the read operation while substantially zero volts is applied to the global word lines and the block select transistors are turned on, and to turn off the select gate transistors after word lines have substantially discharged.
6. The apparatus of claim 5 wherein the control circuit is configured to turn off the select gate transistors only after the word lines have discharged sufficiently for at least a portion of the memory cells to be non-conductive.
7. The apparatus of claim 1 wherein the apparatus includes a plurality of additional blocks, the control circuit configured to, after a read operation of memory cells of the one or more additional blocks, transition global word lines directly from a read voltage to the low positive voltage to discharge the word lines from the read voltage to an intermediate voltage that is between the read voltage and the low positive voltage.
8. The apparatus of claim 7 wherein the block is selected for discharging the word lines to substantially zero volts based on characteristics of the block or data stored in the block.
9. The apparatus of claim 8 wherein the characteristics of the block or data stored in the block includes one or more of: a high write-erase cycle count, a high error rate, operating as a Single Level Cell (SLC) block.
10. A method comprising:
performing a read operation to read data stored in a block of memory cells arranged in NAND strings;
subsequent to the read operation, discharging local word lines of the block to substantially zero volts;
isolating channels of the NAND strings;
isolating the local word lines of the block from global word lines; and
subsequently applying a low positive voltage on the global word lines while the local word lines remain isolated from the global word lines.
11. The method of claim 10 further comprising:
applying substantially zero volts to global word lines and local word lines of one or more unselected blocks during the read operation; and
subsequently applying the low positive voltage on the global word lines of the one or more unselected blocks while the global word lines of the one or more unselected blocks are isolated from the local word lines of the one or more blocks.
12. The method of claim 10 further comprising:
applying substantially zero volts to the global word lines throughout a period of time after the read operation; and
maintaining a connection between the global word lines and the local word lines throughout the period of time to discharge the local word lines to substantially zero volts.
13. The method of claim 12 further comprising:
maintaining select gate transistors of the NAND strings in a conductive state during the period of time that substantially zero volts is applied to the global word lines; and
switching the select gate transistors of the NAND strings to a non-conductive state during the period of time, after local word lines have discharged sufficiently for at least a portion of the memory cells to be non-conductive.
14. The method of claim 10 further comprising:
identifying the block of memory cells for post-read local word line discharge to zero volts; and
identifying additional blocks for post-read local word line discharge directly to the low positive voltage.
15. The method of claim 14 wherein identifying the block of memory cells for post-read local word line discharge to zero volts includes determining that a write-erase cycle count for the block exceeds a threshold and write-erase cycle counts for the additional blocks not exceed the threshold.
16. The method of claim 10 wherein discharging local word lines of the block to substantially zero volts includes discharging from a read voltage in the range of 7.0 to 9.0 volts to a range of −1.0 to 1.0 volts and the low positive voltage is in a range of 1.0 to 2.0 volts.
17. The method of claim 10 wherein discharging local word lines of the block to substantially zero volts includes applying substantially zero volts to the local word lines through global word lines and block select transistors for a period, isolating channels of the NAND strings includes turning off select gate transistors of the NAND strings after the local word lines have discharged sufficiently that at least some memory cells of the block are non-conductive, and isolating the local word lines of the block from global word lines occurs after local word lines have discharged to substantially zero volts and channels are isolated.
18. An apparatus, comprising:
a plurality of NAND strings in a block, each NAND string comprising a source-end select gate transistor, a drain-end select gate transistor, and memory cells between the source-end select gate transistor and the drain-end select gate transistor;
local word lines connected to cells in the plurality of NAND strings, the local word lines selectively coupled to global word lines by block select transistors;
select lines connected to select gate transistors in the plurality of NAND strings; and
means for discharging the local word lines to substantially zero volts after a read operation and subsequently applying a low positive voltage on the global word lines while the global word lines are isolated from the local word lines.
19. The apparatus of claim 18 further comprising: means for identifying blocks for post-read local word line discharge to substantially zero volts based on write-erase cycle count.
20. The apparatus of claim 18 further comprising: means for coupling channels of the plurality of NAND strings to bit lines until the local word lines are discharged sufficiently to turn off at least some of the memory cells.