Method for high aspect ratio photoresist removal in pure reducing plasma
A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.
1. A method for processing a substrate comprising a TiN liner having holes with an aspect ratio of at least 50 and a photoresist layer, the method comprising:
placing the substrate in a processing chamber, the processing chamber located downstream from a plasma chamber;
generating a first non-oxidizing plasma from a first process gas in the plasma chamber, the first process gas comprising a first carrier gas and a first reactant gas, wherein the first process gas comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas comprises NH 3 and the first carrier gas comprises N 2 ;
exposing the substrate to species of the first non-oxidizing plasma in the processing chamber to implement a strip process for removal of at least a portion of the photoresist layer;
generating a second non-oxidizing plasma from a second process gas in the plasma chamber, the second process gas comprising a second carrier gas and a second reactant gas, wherein the second process gas comprises from about 10% to about 40% of the second reactant gas, wherein the second reactant gas comprises H 2 and the second carrier gas comprises Ar;
exposing the substrate to species of the second non-oxidizing plasma in the processing chamber to implement a post-strip treatment process on the substrate.
2. The method of claim 1 , wherein the first process gas comprises about 20% of the first reactant gas.
3. The method of claim 1 , wherein the second process gas comprises about 20% of the second reactant gas.
4. The method of claim 1 , wherein the plasma chamber comprises a dielectric sidewall.
5. The method of claim 4 , wherein an induction coil is disposed adjacent the dielectric sidewall.
6. The method of claim 1 , wherein the method is carried out at a source power ranging from about 0.4 kilowatts to about 13.5 kilowatts.
7. The method of claim 1 , wherein the method is carried out at a pressure ranging from about 100 milliTorr to about 4000 milliTorr.
8. The method of claim 1 , wherein the substrate is treated at a temperature ranging from about 150° C. to about 350° C.
9. The method of claim 1 , wherein the substrate is treated by exposing the substrate to the species of the first non-oxidizing plasma for a time period ranging from about 10 seconds to about 180 seconds.
10. The method of claim 1 , wherein the substrate has a diameter of from about 100 millimeters to about 500 millimeters.
11. The method of claim 1 , wherein the strip process comprises a photoresist removal process.
12. The method of claim 1 , wherein the species of the first non-oxidizing plasma comprise neutral particles and the species of the second non-oxidizing plasma comprise neutral particles.