Plasma processing method and etching apparatus
The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve. A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.
1. A plasma processing method comprising:
a first processing step of arranging a wafer to be processed in a processing chamber, supplying plasma of an organic gas containing fluorine into the processing chamber, depositing a fluorocarbon layer over the upper surface of a film layer to be processed that is formed over the upper surface of the wafer beforehand and contains tungsten, and forming an intermediate layer that contains tungsten and fluorine in the film layer to be processed and is self-limiting between the fluorocarbon layer and the film layer to be processed; and
a second processing step of supplying particles in plasma formed in the processing chamber by using a gas containing oxygen to the upper surface of the film layer to be processed and removing the fluorocarbon layer and the intermediate layer.
2. The plasma processing method according to claim 1 , wherein:
the first step includes, after depositing the fluorocarbon layer, a step of heating the upper surface of the wafer and forming the intermediate layer having the self-limiting nature; and
the second step includes, after supplying the particles in the plasma using the gas containing oxygen and removing the fluorocarbon layer, a step of heating the wafer and removing the intermediate layer.
3. The plasma processing method according to claim 2 , wherein the wafer is heated by irradiating the upper surface of the wafer with infrared at the first or second step.
4. The plasma processing method according to claim 2 , wherein multiple steps including the step of removing the fluorocarbon layer and the step of removing the intermediate layer by heating the wafer in the second step are regarded as one cycle and the cycle is repeated multiple times.