IP Library › Granted Patent US 12,451,364
Granted Patent B2
US 12,451,364 · App. 18/279,827 · Granted Oct 21, 2025

Plasma processing method

Inventors: Kenta Nakajima (Tokyo, JP); Toru Ito (Tokyo, JP); Fumiyoshi Ofuji (Tokyo, JP)
Assignee: HITACHI HIGH-TECH CORPORATION
H01L21/32136H01J37/32146H01J37/32174H01L21/02164H01L21/31116H10B41/20H10B43/20H10D64/035H10D64/037H10D64/665H10D64/691H01J37/32311H01J2237/332H01J2237/3341H01J2237/3347
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Quick Facts
Patent No.
US 12,451,364
App. No.
18/279,827
Granted
Oct 21, 2025
Kind
B2
Abstract

A plasma processing method for uniformly removing a processing target film in a lateral direction even when a depth of a trench is increased, in particular, a method for plasma-etching a tungsten film of a stacked film formed by alternately stacking an insulating film and the tungsten film. The method includes: a first depositing step of depositing a film; a first etching step of etching after the first depositing step; a second depositing step of depositing a film; a second etching step of etching using a mixed gas after the second depositing step; and a third etching step of etching after the second etching step, the second depositing step being performed after the first depositing step and the first etching step are repeated a predetermined number of times, and the second depositing step, the second etching step, and the third etching step are repeated a predetermined number of times.

Claims (17)

1. A plasma processing method for plasma-etching a tungsten film of a stacked film formed by alternately stacking an insulating film and the tungsten film, the plasma processing method comprising:

a first depositing step of depositing a deposited film;

a first etching step of etching the tungsten film after the first depositing step;

a second depositing step of depositing a deposited film;

a second etching step of etching the tungsten film by using a mixed gas containing a Cl 2 gas, an N 2 gas, a CF 4 gas and a C 4 F 8 gas after the second depositing step; and

a third etching step of etching the tungsten film after the second etching step, wherein

the second depositing step is performed after the first depositing step and the first etching step are repeated a predetermined number of times, and

the second depositing step, the second etching step, and the third etching step are repeated a predetermined number of times.

2. The plasma processing method according to claim 1 , wherein

the insulating film is a silicon oxide film.

3. The plasma processing method according to claim 1 , wherein

the third etching step is performed by using a mixed gas containing a Cl 2 gas, an N 2 gas, a CF 4 gas and a C 4 F 8 gas.

4. The plasma processing method according to claim 3 , wherein

the second etching step is performed while radio frequency power is supplied to a sample stage on which a sample having the stacked film is placed, and

the third etching step is performed without supplying radio frequency power to the sample stage.

5. The plasma processing method according to claim 4 , wherein

the second depositing step is performed by using a C 4 F 8 gas.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 7, 2024
From: NAKAJIMA, KENTA; ITO, TORU; OFUJI, FUMIYOSHI
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 068171/0973 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 1, 2024
From: NAKAJIMA, KENTA; ITO, TORU; OFUJI, FUMIYOSHI
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 066430/0931 →
Continuity (1)
Related Publication 20250046620A1 · Feb 6, 2025
References Cited (217)
US 2981287A · Caslow · 1961 [cited by applicant]
US 3452781A · Napolitano · 1969 [cited by applicant]
US 3760843A · Larner · 1973 [cited by applicant]
US 4450031A · Ono et al. · 1984 [cited by applicant]
US 4638837A · Buike et al. · 1987 [cited by applicant]
US 4669404A · Yoneda · 1987 [cited by applicant]
US 4844767A · Okudaira et al. · 1989 [cited by applicant]
US 4960073A · Suzuki et al. · 1990 [cited by applicant]
US 5178962A · Miyamoto et al. · 1993 [cited by applicant]
US 5195045A · Keane et al. · 1993 [cited by applicant]
US 5284544A · Mizutani et al. · 1994 [cited by applicant]
US 5712592A · Stimson et al. · 1998 [cited by applicant]
US 5770922A · Gerrish et al. · 1998 [cited by applicant]
US 5992460A · Akimoto · 1999 [cited by applicant]
US 5998986A · Ido · 1999 [cited by applicant]
US 6082406A · Williamson, Jr. et al. · 2000 [cited by applicant]
US 6145541A · Hirota · 2000 [cited by applicant]
US 6156152A · Ogino et al. · 2000 [cited by applicant]
US 6162323A · Koshimizu · 2000 [cited by applicant]
US 6192937B1 · Fagerlie et al. · 2001 [cited by applicant]
US 6265831B1 · Howald et al. · 2001 [cited by applicant]
US 6270618B1 · Nakano et al. · 2001 [cited by applicant]
US 6287980B1 · Hanazaki et al. · 2001 [cited by applicant]
US 6351683B1 · Johnson et al. · 2002 [cited by applicant]
US 6551447B1 · Savas et al. · 2003 [cited by applicant]
US RE38273E · Gerrish et al. · 2003 [cited by applicant]
US 6677711B2 · MacGearailt · 2004 [cited by applicant]
US 6867086B1 · Chen et al. · 2005 [cited by applicant]
US 6919689B2 · Jafarian-Tehrani et al. · 2005 [cited by applicant]
US 7084832B2 · Pribyl · 2006 [cited by applicant]
US 7190119B2 · Patrick et al. · 2007 [cited by applicant]
US 7645357B2 · Paterson et al. · 2010 [cited by applicant]
US 8038896B2 · Ikegami et al. · 2011 [cited by applicant]
US 8546266B2 · Mori et al. · 2013 [cited by applicant]
US 9246011B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9431268B2 · Lill et al. · 2016 [cited by applicant]
US 9548228B2 · Chandrashekar et al. · 2017 [cited by applicant]
US 9978610B2 · Fung et al. · 2018 [cited by applicant]
US 10121686B2 · Ogawa et al. · 2018 [cited by applicant]
US 11217454B2 · Shinoda et al. · 2022 [cited by applicant]
US 20010022293A1 · Maeda et al. · 2001 [cited by applicant]
US 20020106845A1 · Chao et al. · 2002 [cited by applicant]
US 20020123229A1 · Ono et al. · 2002 [cited by applicant]
US 20030212507A1 · Wei et al. · 2003 [cited by applicant]
US 20040058541A1 · Ono et al. · 2004 [cited by applicant]
US 20040129671A1 · Ji et al. · 2004 [cited by applicant]
US 20040178180A1 · Kaji et al. · 2004 [cited by applicant]
US 20040185670A1 · Hamelin et al. · 2004 [cited by applicant]
US 20060037704A1 · Iwata et al. · 2006 [cited by applicant]
US 20060048892A1 · Arase et al. · 2006 [cited by applicant]
US 20060288934A1 · Takahashi et al. · 2006 [cited by applicant]
US 20070044716A1 · Tetsuka et al. · 2007 [cited by applicant]
US 20070163477A1 · Nagata et al. · 2007 [cited by applicant]
US 20070286967A1 · Ide et al. · 2007 [cited by applicant]
US 20080110400A1 · Satou et al. · 2008 [cited by applicant]
US 20080128087A1 · Hayano et al. · 2008 [cited by applicant]
US 20080190893A1 · Mori et al. · 2008 [cited by applicant]
US 20080268645A1 · Kao et al. · 2008 [cited by applicant]
US 20080277062A1 · Koshimizu et al. · 2008 [cited by applicant]
US 20090023296A1 · Nishizuka · 2009 [cited by applicant]
US 20090029564A1 · Yamashita et al. · 2009 [cited by applicant]
US 20100258529A1 · Mori et al. · 2010 [cited by applicant]
US 20110120649A1 · Satou et al. · 2011 [cited by applicant]
US 20110297533A1 · Mori et al. · 2011 [cited by applicant]
US 20120064726A1 · Yang et al. · 2012 [cited by applicant]
US 20120222751A1 · Okabe · 2012 [cited by applicant]
US 20120231553A1 · Okita et al. · 2012 [cited by applicant]
US 20120255617A1 · Miyazoe et al. · 2012 [cited by applicant]
US 20130228550A1 · Mori et al. · 2013 [cited by applicant]
US 20130270625A1 · Jang et al. · 2013 [cited by applicant]
US 20130319615A1 · Cho et al. · 2013 [cited by applicant]
US 20140020831A1 · Ohgoshi et al. · 2014 [cited by applicant]
US 20140057447A1 · Nozawa et al. · 2014 [cited by applicant]
US 20140091435A1 · Chan et al. · 2014 [cited by applicant]
US 20140102640A1 · Yokogawa et al. · 2014 [cited by applicant]
US 20140134842A1 · Zhang et al. · 2014 [cited by applicant]
US 20140151686A1 · Yamazaki et al. · 2014 [cited by applicant]
US 20140225503A1 · Mori et al. · 2014 [cited by applicant]
US 20140262034A1 · Ishibashi et al. · 2014 [cited by applicant]
US 20150011093A1 · Singh et al. · 2015 [cited by applicant]
US 20150072533A1 · Muraki et al. · 2015 [cited by applicant]
US 20150083582A1 · Dhindsa et al. · 2015 [cited by applicant]
US 20150179464A1 · Wang et al. · 2015 [cited by applicant]
US 20150262829A1 · Park et al. · 2015 [cited by applicant]
US 20150270148A1 · Shinoda et al. · 2015 [cited by applicant]
US 20150330519A1 · Maurer et al. · 2015 [cited by applicant]
US 20150357210A1 · Mori et al. · 2015 [cited by applicant]
US 20160035585A1 · Xiang et al. · 2016 [cited by applicant]
US 20160133530A1 · Sonoda et al. · 2016 [cited by applicant]
US 20160177443A1 · Kumar et al. · 2016 [cited by applicant]
US 20160379857A1 · Ogawa et al. · 2016 [cited by applicant]
US 20170053810A1 · Yang et al. · 2017 [cited by applicant]
US 20170069511A1 · Yang · 2017 [cited by examiner]
US 20170101713A1 · Wang et al. · 2017 [cited by applicant]
US 20170194166A1 · Tan et al. · 2017 [cited by applicant]
US 20170229314A1 · Tan et al. · 2017 [cited by applicant]
US 20180047595A1 · Kofuji et al. · 2018 [cited by applicant]
US 20180144948A1 · Maruyama et al. · 2018 [cited by applicant]
US 20180144977A1 · Yu et al. · 2018 [cited by applicant]
US 20180211824A1 · Kudo et al. · 2018 [cited by applicant]
US 20180330985A1 · Yu et al. · 2018 [cited by applicant]
US 20190043732A1 · Eason et al. · 2019 [cited by applicant]
US 20190067032A1 · Shinoda et al. · 2019 [cited by applicant]
US 20210233918A1 · Koshizawa et al. · 2021 [cited by applicant]
US 20210242030A1 · Shinoda et al. · 2021 [cited by applicant]
US 20210335625A1 · Kofuji et al. · 2021 [cited by applicant]
JP S6214429A · 1987 [cited by applicant]
JP H02230729A · 1990 [cited by applicant]
JP H03012924A · 1991 [cited by applicant]
JP H03218018A · 1991 [cited by applicant]
JP H04180621A · 1992 [cited by applicant]
JP H04225226A · 1992 [cited by applicant]
JP H04298033A · 1992 [cited by applicant]
JP H0507763A · 1993 [cited by applicant]
JP H05234947A · 1993 [cited by applicant]
JP H06045326A · 1994 [cited by applicant]
JP H06053173A · 1994 [cited by applicant]
JP 106077184A · 1994 [cited by applicant]
JP H07254606A · 1995 [cited by applicant]
JP H08107101A · 1996 [cited by applicant]
JP H09185999A · 1997 [cited by applicant]
JP H10335314A · 1998 [cited by applicant]
JP H11185998A · 1999 [cited by applicant]
JP H11340213A · 1999 [cited by applicant]
JP 2000091321A · 2000 [cited by applicant]
JP 2000306884A · 2000 [cited by applicant]
JP 2001185542A · 2001 [cited by applicant]
JP 2001319882A · 2001 [cited by applicant]
JP 2002343768A · 2002 [cited by applicant]
JP 2003229419A · 2003 [cited by applicant]
JP 2003347278A · 2003 [cited by applicant]
JP 2004349717A · 2004 [cited by applicant]
JP 2005259839A · 2005 [cited by applicant]
JP 2006066905A · 2006 [cited by applicant]
JP 2006086449A · 2006 [cited by applicant]
JP 2007005491A · 2007 [cited by applicant]
JP 2007059567A · 2007 [cited by applicant]
JP 2008124190A · 2008 [cited by applicant]
JP 2008244146A · 2008 [cited by applicant]
JP 2011082180A · 2011 [cited by applicant]
JP 2013214583A · 2013 [cited by applicant]
JP 2013251546A · 2013 [cited by applicant]
JP 2014075578A · 2014 [cited by applicant]
JP 2014229751A · 2014 [cited by applicant]
JP 201550362A · 2015 [cited by applicant]
JP 2015065434A · 2015 [cited by applicant]
JP 2015188025A · 2015 [cited by applicant]
JP 2016051846A · 2016 [cited by applicant]
JP 2016139792A · 2016 [cited by applicant]
JP 2016145412A · 2016 [cited by applicant]
JP 2016207771A · 2016 [cited by applicant]
JP 2017063186A · 2017 [cited by applicant]
JP 2017183688A · 2017 [cited by applicant]
JP 2018093226A · 2018 [cited by applicant]
JP 2018533207A · 2018 [cited by applicant]
JP 2019040932A · 2019 [cited by applicant]
JP 2019176184A · 2019 [cited by applicant]
JP 2020529732A · 2020 [cited by applicant]
JP 2021192464A · 2021 [cited by applicant]
KR 1020050099723A · 2005 [cited by applicant]
KR 1020080086172A · 2008 [cited by applicant]
KR 1020170101952A · 2017 [cited by applicant]
KR 1020170108916A · 2017 [cited by applicant]
TW 544805B · 2003 [cited by applicant]
TW 200620454A · 2006 [cited by applicant]
TW 200802592A · 2008 [cited by applicant]
TW 200829087A · 2008 [cited by applicant]
TW 201234474A · 2012 [cited by applicant]
TW 201417172A · 2014 [cited by applicant]
TW 201428848A · 2014 [cited by applicant]
TW 201517162A · 2015 [cited by applicant]
TW 201533796A · 2015 [cited by applicant]
WO 2005104203A · 2005 [cited by applicant]
WO 2016121075A1 · 2016 [cited by applicant]
WO 2016190036A1 · 2016 [cited by applicant]
WO 2020161879A1 · 2020 [cited by applicant]
WO 2020217266A1 · 2020 [cited by applicant]
Search Report mailed Jul. 19, 2022 in International Application No. PCT/JP2022/018912. [cited by applicant]
Written Opinion mailed Jul. 19, 2022 in International Application No. PCT/JP2022/018912. [cited by applicant]
Notice of Allowance mailed Feb. 16, 2022 in U.S. Appl. No. 16/216,455. [cited by applicant]
Office Action mailed Apr. 2, 2021 in U.S. Appl. No. 15/558,005. [cited by applicant]
Office Action mailed Apr. 29, 2021 in U.S. Appl. No. 16/216,455. [cited by applicant]
Office Action mailed Aug. 24, 2020 in U.S. Appl. No. 15/558,005. [cited by applicant]
Office Action mailed Dec. 9, 2019 in Korean Application No. 10-2018-0157894. [cited by applicant]
Office Action mailed Feb. 23, 2018 in Taiwanese Application No. 106123071. [cited by applicant]
Office Action mailed Feb. 28, 2023 in Japanese Application No. 2022-552363. [cited by applicant]
Office Action mailed Feb. 7, 2020 in U.S. Appl. No. 15/558,005. [cited by applicant]
Office Action mailed Jul. 21, 2020 in Japanese Application No. 2019-124995. [cited by applicant]
Office Action mailed Jun. 14, 2019 in U.S. Appl. No. 15/558,005. [cited by applicant]
Office Action mailed Mar. 5, 2019 in Japanese Application No. 2018-037128. [cited by applicant]
Office Action mailed May 12, 2022 in U.S. Appl. No. 15/558,005. [cited by applicant]
Office Action mailed May 6, 2022 in Taiwanese Application No. 111104241. [cited by applicant]
Office Action mailed Nov. 26, 2018 in U.S. Appl. No. 15/558,005. [cited by applicant]
Office Action mailed Nov. 30, 2022 in U.S. Appl. No. 15/558,005. [cited by applicant]
Office Action mailed Oct. 15, 2021 in U.S. Appl. No. 15/558,005. [cited by applicant]
Office Action mailed Sep. 28, 2018 in Taiwanese Application No. 106123071. [cited by applicant]
Search Report mailed Apr. 6, 2021 in International Application No. PCT/JP2021/004592. [cited by applicant]
Search Report mailed Jul. 5, 2016 in International Application No. PCT/JP2016/063129. [cited by applicant]
Search Report mailed Mar. 10, 2020 in International Application No. PCT/JP2019/050413. [cited by applicant]
Search Report mailed Mar. 12, 2019 in International Application No. PCT/JP2019/004577. [cited by applicant]
Search Report mailed Sep. 7, 2021 in International Application No. PCT/JP2021/024374. [cited by applicant]
Written Opinion mailed Apr. 6, 2021 in International Application No. PCT/JP2021/004592. [cited by applicant]
Written Opinion mailed Sep. 7, 2021 in International Application No. PCT/JP2021/024374. [cited by applicant]
Office Action mailed Apr. 20, 2021 in Japanese Application No. 2020-509124. [cited by applicant]
Patrick Verdonck, et al., “Analysis of the Etching Mechanisms of Tungsten in Fluorine Containing Plasmas”, Journal of Electrochemical Society, vol. 142, No. 6, pp. 1971-1976 (1995). [cited by applicant]
Search Report mailed Jul. 16, 2019 in International Application No. PCT/JP2019/016930. [cited by applicant]
Office Action mailed Sep. 26, 2018 in Taiwanese Application No. 107106284. [cited by applicant]
Office Action mailed Jul. 13, 2018 in Korean Application No. 10-2014-0013325. [cited by applicant]
Office Action mailed Jul. 13, 2018 in Korean Application No. 10-2015-0053111. [cited by applicant]
Office Action mailed Aug. 9, 2016 in Japanese Application No. 2013-112562. [cited by applicant]
Office Action mailed Jan. 15, 2016 in Taiwanese Application No. 10520049730. [cited by applicant]
Office Action mailed Jan. 19, 2015 in Korean Application No. 10-2014-0013325. [cited by applicant]
Search Report mailed Oct. 7, 2014 in U.S. Appl. No. 14/177,251. [cited by applicant]
Notice of Allowance mailed Aug. 27, 2021 in U.S. Appl. No. 16/646,057. [cited by applicant]
Office Action mailed May 11, 2021 in U.S. Appl. No. 16/646,057. [cited by applicant]
Office Action mailed May 10, 2024 in Taiwanese Application No. 112106619. [cited by applicant]
Office Action mailed Aug. 16, 2023 in Taiwanese Application No. 112106619. [cited by applicant]