Seal for microelectronic assembly
Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.
1. A microelectronic assembly, comprising:
a first microelectronic component bonded at a first insulating surface to a second insulating surface of a second microelectronic component, the first insulating surface and the second insulating surface forming a bond joint where the first insulating surface and the second insulating surface make contact; and
a seal extending at least to the bond joint, the seal comprising a metallic material and sealing the bond joint between the first microelectronic component and the second microelectronic component, wherein the seal is continuous within a periphery of at least one of the first microelectronic component and the second microelectronic component.
2. The microelectronic assembly of claim 1 , further comprising a cavity disposed at the bond joint between the first microelectronic component and the second microelectronic component, the cavity formed by a portion of the first microelectronic component and a portion of the second microelectronic component, and wherein the seal is continuous around a periphery of the cavity.
3. The microelectronic assembly of claim 1 , wherein the seal comprises a hermetic seal arranged to prevent fluid leakage at the bond joint greater than 1×10 −6 atm-cm3 per second.
4. The microelectronic assembly of claim 1 , wherein the microelectronic assembly comprises a microelectromechanical systems (MEMS) device.
5. The microelectronic assembly of claim 1 , wherein the seal extends through a thickness of the second microelectronic component and extends partially through the first microelectronic component.
6. The microelectronic assembly of claim 5 , wherein the seal is a filled seal filled with the metallic material.
7. The microelectronic assembly of claim 5 , wherein the seal is a conformal seal having a layer of the metallic material conformally disposed on surfaces of a channel that extends through the thickness of the second microelectronic component and extends partially through the first microelectronic component.
8. The microelectronic assembly of claim 5 , further comprising a third microelectronic component coupled to the second microelectronic component such that the second microelectronic component is positioned between he first microelectronic component and the third microelectronic component.
9. The microelectronic assembly of claim 8 , wherein the third microelectronic component comprises a logic device.
10. The microelectronic assembly of claim 9 , wherein the first microelectronic component comprises a cavity die and the second microelectronic component comprises a microelectromechanical systems (MEMS) die.
11. The microelectronic assembly of claim 8 , wherein the second microelectronic component is bonded to the third microelectronic component by way of a polymeric material.
12. The microelectronic assembly of claim 8 , wherein the first microelectronic component is bonded to the second microelectronic component using an adhesive-less, room temperature, covalent bonding technique, and wherein the second microelectronic component is bonded to the third microelectronic component using an adhesive-less, room temperature, covalent bonding technique.
13. A microelectronic assembly, comprising:
a first microelectronic component bonded at a first insulating surface to a second insulating surface of a second microelectronic component, the first insulating surface and the second insulating surface forming a bond joint where the first insulating surface and the second insulating surface make contact; and
a seal disposed over the bond joint, the seal comprising a metallic material and sealing the bond joint between the first microelectronic component and the second microelectronic component, wherein the seal is continuous over a periphery of at least one of the first microelectronic component and the second microelectronic component.
14. A microelectronic assembly, comprising:
a first microelectronic component bonded at a first insulating surface to a second insulating surface of a second microelectronic component, the first insulating surface and the second insulating surface forming a bond joint where the first insulating surface and the second insulating surface make contact; and
a seal extending at least to the bond joint, the seal comprising a metallic material and sealing the bond joint between the first microelectronic component and the second microelectronic component,
wherein the first insulating surface is directly and covalently bonded to the second insulating surface without an adhesive by way of a room temperature covalent bond.
15. The microelectronic assembly of claim 14 , further comprising a cavity disposed at the bond joint between the first microelectronic component and the second microelectronic component, the cavity formed by a portion of the first microelectronic component and a portion of the second microelectronic component.
16. The microelectronic assembly of claim 14 , wherein the seal extends through a thickness of the second microelectronic component and extends partially through the first microelectronic component.
17. The microelectronic assembly of claim 14 , wherein the seal is a filled seal filled with the metallic material.
18. The microelectronic assembly of claim 14 , wherein the seal is a conformal seal having a layer of the metallic material conformally disposed on surfaces of a channel that extends through a thickness of the second microelectronic component and extends partially through the first microelectronic component.
19. The microelectronic assembly of claim 14 , wherein the seal comprises a hermetic seal arranged to prevent fluid leakage at the bond joint greater than 1×10 −6 atm-cm3 per second.