Method for integrating a light emitting device
Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.
1. A display panel pixel structure comprising:
a substrate including:
a tie line;
a planarization layer over the tie line;
a plurality of bottom electrodes over the planarization layer; and
a corresponding plurality of thin film driving transistors connected to the plurality of bottom electrodes;
a corresponding plurality of light emitting diode (LEDs) bonded to the plurality of bottom electrodes within a pixel area of the display panel;
a patterned conductive layer over the planarization layer, wherein the patterned conductive layer is in electrical contact the tie line; and
a top conductive electrode layer that electrically connects the plurality of LEDs with the patterned conductive layer.
2. The display panel of claim 1 , wherein the tie line is selected from the group consisting of a Vss line and a power line.
3. The display panel of claim 1 , further comprising a passivation layer over the substrate and laterally around the plurality of LEDs, wherein the top conductive electrode layer is over the passivation layer.
4. The display panel of claim 3 , wherein the passivation layer comprises a thermoset material.
5. The display panel of claim 4 , wherein the thermoset material is an acrylic.
6. The display panel of claim 3 , wherein each LED comprises a vertical p-n diode between a bottom contact and a top contact.
7. The display panel of claim 6 , wherein each LED is bonded to a corresponding bottom electrode with a solder material.
8. The display panel of claim 6 , wherein each LED has a maximum width of 1 to 100 μm.
9. The display panel of claim 6 , wherein each LED has a maximum width of 1 to 20 μm.
10. The display panel of claim 6 , wherein each LED has a maximum width of 1 to 10 μm.
11. The display panel of claim 3 , further comprising a corresponding plurality of thin film switching transistors connected with the plurality of thin film driving transistors.
12. The display panel of claim 11 , further comprising a corresponding plurality of storage capacitors connected with the plurality of thin film switching transistors.
13. The display panel of claim 3 , further comprising a patterned dam layer over the planarization layer, and the patterned conductive layer is on top of the patterned dam layer.
14. The display panel of claim 13 , wherein the patterned conductive layer spans along an opening of the patterned dam layer.
15. The display panel of claim 13 , wherein a top surface of the passivation layer is below of top surface of each LED and a top surface of the patterned dam layer.
16. The display panel of claim 3 , wherein the patterned conductive layer spans along an opening in the passivation layer.
17. The display panel of claim 3 :
wherein the substrate includes:
a second tie line, wherein the planarization layer is over the second tie line;
a second plurality of bottom electrodes over the planarization layer; and
a corresponding second plurality of thin film driving transistors connected to the second plurality of bottom electrodes:
a corresponding second plurality of LEDs bonded to the second plurality of bottom electrodes within the pixel area of the display panel;
a second patterned conductive layer over the planarization layer, wherein the second patterned conductive layer is in electrical contact the second tie line; and
a second top conductive electrode layer that electrically connects the second plurality of LEDs with the second patterned conductive layer.
18. The display panel of claim 17 , wherein the passivation layer is laterally around the second plurality of LEDs, wherein the second top conductive electrode layer is over the passivation layer.
19. The display panel of claim 18 , wherein:
the patterned conductive layer spans along an opening in the passivation layer; and
the second patterned conductive layer spans along a second opening in the passivation layer.
20. The display panel of claim 18 , further comprising:
a patterned dam layer over the planarization layer, and the patterned conductive layer is on top of the patterned dam layer; and
a second patterned dam layer over the planarization layer, and the second patterned conductive layer is on top of the patterned dam layer.