Semiconductor package electrical contact structures and related methods
Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.
1. A semiconductor package, comprising:
a die comprising a first side and a second side;
a first pad and a second pad each coupled to the first side of the die, the first pad and the second pad each comprising a first layer and a second layer where the second layer is thicker than the first layer;
at least a first conductor directly coupled to the second layer of the first pad, the at least one first conductor having a perimeter entirely within a perimeter of the second layer of the first pad;
at least a second conductor directly coupled to the second layer of the second pad, the at least one second conductor having a perimeter entirely within a perimeter of the second layer of the second pad; and
a single layer of organic material covering at least a portion of at least the first side of the die, wherein the at least first conductor and the at least second conductor extend through corresponding openings in the single layer of organic material;
wherein a spacing between the at least first conductor and the at least second conductor is wider than a spacing between the second layer of the first pad and the second layer of the second pad and each spacing is filled by the single layer of organic material.
2. The package of claim 1 , wherein the first pad is a gate pad and the second pad is a source pad.
3. The package of claim 1 , wherein the perimeter of the second layer of the second pad is larger than the perimeter of the second layer of the first pad.
4. The package of claim 1 , further comprising a backmetal coupled to the second side of the semiconductor die.
5. The package of claim 1 , wherein the die has a thickness of 0.1 micron to 125 microns.
6. The package of claim 1 , wherein a material of the second layer is one of the same material or a different material from the material of the first layer.
7. The package of claim 1 , wherein the organic material is a mold compound.
8. The package of claim 1 , further comprising a first contact layer coupled directly over the at least first conductor and a second contact layer coupled directly over the at least second contact layer.
9. The package of claim 8 , wherein a perimeter of the first contact layer is larger than the perimeter of the at least first conductor and a perimeter of the second contact layer is larger than the perimeter of the at least second conductor.
10. A semiconductor package, comprising:
a die comprising a first side and a second side;
a first pad and a second pad each coupled to the first side of the die, the first pad and the second pad each comprising a first layer and a second layer where the second layer is thicker than the first layer;
at least a first conductor directly coupled to the second layer of the first pad;
at least a second conductor directly coupled to the second layer of the second pad;
a first contact layer coupled directly over the at least first conductor and a second contact layer coupled directly over the at least second conductor; and
a single layer of organic material surrounding the at least first conductor and the at least second conductor;
wherein a spacing between the first contact layer and the second contact layer is wider than a spacing between the second layer of the first pad and the second layer of the second pad and each spacing is filled with the single layer of organic material.
11. The package of claim 10 , wherein the first pad is a gate pad and the second pad is a source pad.
12. The package of claim 10 , wherein a perimeter of the second layer of the second pad is larger than a perimeter of the second layer of the first pad.
13. The package of claim 10 , further comprising a backmetal coupled to the second side of the semiconductor die.
14. The package of claim 10 , wherein the die has a thickness of 0.1 micron to 125 microns.
15. The package of claim 10 , wherein a material of the second layer is one of the same material or a different material from the material of the first layer.
16. The package of claim 10 , wherein the organic material is a mold compound.