Deposition apparatus including an off-axis lift-and-rotation unit and methods for operating the same
A deposition chamber includes a vacuum enclosure, an electrostatic chuck having a flat top surface located within a vacuum enclosure, a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck, a gas supply manifold configured to provide influx of gas into the vacuum enclosure, and a pumping port connected to the vacuum enclosure.
1. A deposition chamber comprising:
a vacuum enclosure;
an electrostatic chuck having a flat top surface located within the vacuum enclosure;
a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck;
a gas supply manifold configured to provide influx of gas into the vacuum enclosure; and
a pumping port connected to the vacuum enclosure;
wherein:
the lift-and-rotation unit comprises a plurality of lift pins;
the electrostatic chuck has plurality of arc-shaped holes therethrough; and
the plurality of lift pins are located within a respective arc-shaped hole of the plurality of arc-shaped holes and configured to protrude above a horizontal plane including the flat top surface of the electrostatic chuck in a raised position and to be retracted below the horizontal plane including the flat top surface of the electrostatic chuck in a retracted position.
2. The deposition chamber of claim 1 , wherein the plurality of arc-shaped holes comprise three or more arc-shaped holes.
3. The deposition chamber of claim 1 , wherein each of the plurality of arc-shaped holes comprises:
an inner convex vertical sidewall having a first uniform lateral distance from the vertical axis passing through the geometrical center of the electrostatic chuck; and
an outer concave vertical sidewall having a second uniform lateral distance from the vertical axis.
4. The deposition chamber of claim 1 , wherein the plurality of lift pins is located on a rotor structure that is configured to rotate around the vertical axis and to rotate the lift pins around the vertical axis in the respective arc-shaped holes.
5. The deposition chamber of claim 1 , wherein each of the plurality of arc-shaped holes azimuthally extends around a vertical axis passing through a geometrical center of the electrostatic chuck at least by 2π/(N+1) radian, wherein N is an integer in a range from 3 to 12.
6. The deposition chamber of claim 5 , wherein each of the plurality of arc-shaped holes is radially spaced from the vertical axis passing through the geometrical center of the electrostatic chuck by a same lateral spacing.
7. A deposition chamber comprising:
a vacuum enclosure;
an electrostatic chuck having a flat top surface located within the vacuum enclosure;
a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck;
a gas supply manifold configured to provide influx of gas into the vacuum enclosure; and
a pumping port connected to the vacuum enclosure;
wherein the electrostatic chuck is stationary and not configured to rotate with respect to the vacuum enclosure.
8. A method of depositing a film in a deposition chamber, comprising:
providing a deposition chamber, wherein the deposition chamber comprises an electrostatic chuck having a flat top surface and located within a vacuum enclosure, and a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck;
disposing a substrate on top of the electrostatic chuck;
depositing a first film portion on the substrate;
lifting the substrate from the electrostatic chuck employing the lift-and-rotation unit;
rotating the lifted substrate relative to the electrostatic chuck by rotating the lift-and-rotation unit while the substrate is supported by the lift-and-rotation unit;
placing the substrate on the electrostatic chuck after the substrate is rotated; and
depositing a second film portion on the substrate.
9. The method of claim 8 , wherein the substrate is rotated relative to the electrostatic chuck by 2π/N radian, wherein N is an integer greater than 2.
10. The method of claim 9 , further comprising repeating a combination of rotation of the electrostatic chuck by 2π/N radian and deposition of an additional film portion (N−2) times after deposition of the second film portion on the substrate.
11. The method of claim 9 , wherein:
the electrostatic chuck comprises a plurality of arc-shaped holes therethrough; and
the lift-and-rotation unit comprises a plurality of lift pins located within a respective arc-shaped hole of the plurality of arc-shaped holes, and is configured to protrude above a horizontal plane including the flat top surface of the electrostatic chuck in a raised position and to be retracted below the horizontal plane including the flat top surface of the electrostatic chuck in a retracted position.
12. The method of claim 9 , wherein:
the lift-and-rotation unit comprises a lift ring laterally surrounding the electrostatic chuck and having an annular top surface; and
the lift ring is configured to rotate around the electrostatic chuck.
13. The method of claim 9 , wherein the film comprises a carbon hard mask film.