Composition for semiconductor processing and method for polishing substrate using the same
A composition for semiconductor processing comprises: polishing particles; a thiazolinone compound; and a solvent, wherein a logarithmic reduction factor of a microorganism in the composition, as calculated by Formula 1, is at least 4: Logarithmic reduction factor=log(CFU 0 /CFU X ) Formula 1 where CFU 0 is an initial concentration (CFU/mL) of the microorganism, CFU X is a concentration (CFU/mL) of the microorganism remaining after standing at room temperature for X days, and X is 1, 2, 3, 4, 5 or 6.
1. A composition for semiconductor processing comprising:
polishing particles;
a thiazolinone compound;
a solvent;
an organic acid; and
a microorganism,
wherein a content of the thiazolinone compound is from 100 ppm to 1200 ppm,
wherein the composition comprises 1 to 50 parts by weight of the organic acid, based on 100 parts by weight of the polishing particles,
wherein a logarithmic reduction factor of the microorganism in the composition, as calculated by Formula 1, is at least 4, and
wherein the thiazolinone compound has a reduction rate, as calculated by Formula 2, of 1.9% or less:
Logarithmic reduction factor=log(CFU 0 /CFU X ) Formula 1
where CFU 0 is an initial concentration of the microorganism, CFU X is a concentration of the microorganism remaining after standing at room temperature for X days, and X is 1, 2, 3, 4, 5 or 6
Reduction rate (%)=( D 1− D 2)/ D 1×100 Formula 2
where D1 is a content of the thiazolinone compound measured at room temperature and D2 is a content of the thiazolinone compound measured after storage at 65° C. for 1 day.
2. The composition of claim 1 , wherein the composition is a liquid composition.
3. The composition of claim 1 , wherein the microorganism comprises at least one of E. coli, C. albicans and A. brasiliensis.
4. The composition of claim 1 , wherein the logarithmic reduction factor where X is 4 is equal to or greater than the logarithmic reduction factor where X is 1.
5. The composition of claim 1 , wherein the logarithmic reduction factor where X is 6 is equal to or greater than the logarithmic reduction factor where X is 4.
6. The composition of claim 1 , wherein the logarithmic reduction factor is from 4 to 15.
7. The composition of claim 1 , wherein the thiazolinone compound is selected from the group consisting of methylisothiazolinone (MIT), chloromethylisothiazolinone (CMIT), benzisothiazolinone (BIT), octylisothiazolinone (OIT), dichlorooctylisothiazolinone (DCOIT), butylbenzisothiazolinone (BBIT), and combinations thereof.
8. The composition of claim 1 , wherein the polishing particles are selected from the group consisting of silicon oxide particles, cerium oxide (ceria) particles, titanium oxide particles, zirconium oxide particles, inorganic composite particles, organic and inorganic composite particles, and combinations thereof.
9. The composition of claim 1 , wherein a content of the solvent is 79.88% by weight or more based on a total weight of the composition.
10. The composition of claim 1 , further comprising a compound selected from the group consisting of a zwitterionic compound, a water-soluble polymer, an azole compound, a glycol compound, and combinations thereof.
11. The composition of claim 1 , wherein a particle diameter at 10% of a cumulative mass particle size distribution (D10) of the polishing particles is from 40 nm to 70 nm.
12. The composition of claim 1 , wherein a particle diameter at 90% of a cumulative mass particle size distribution (D90) of the polishing particles is from 100 nm to 130 nm.
13. The composition of claim 1 , wherein the thiazolinone compound is benzisothiazolinone (BIT).