Display device including transistor and manufacturing method thereof
An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
1. A semiconductor device comprising:
an oxide semiconductor layer comprising a channel formation region of a transistor;
a first gate electrode below the oxide semiconductor layer;
a second gate electrode over the oxide semiconductor layer;
a source electrode electrically connected to the oxide semiconductor layer;
a drain electrode electrically connected to the oxide semiconductor layer; and
an insulating layer between the first gate electrode and each of the source electrode and the drain electrode,
wherein the first gate electrode comprises a region overlapping with a contact hole in the insulating layer,
wherein the region of the first gate electrode is in contact with one of the source electrode and the drain electrode, and
wherein in a plan view of the semiconductor device, the contact hole does not overlap with the oxide semiconductor layer and is located in a region extending in a channel length direction of the transistor from a periphery of the oxide semiconductor layer.
2. The semiconductor device according to claim 1 , wherein in the channel length direction of the transistor, the second gate electrode is smaller than the oxide semiconductor layer.
3. The semiconductor device according to claim 1 , wherein in the channel length direction of the transistor, the first gate electrode is larger than the oxide semiconductor layer.
4. The semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are over the oxide semiconductor layer.
5. The semiconductor device according to claim 1 , further comprising a pixel electrode electrically connected to the source electrode or the drain electrode.
6. The semiconductor device according to claim 5 , wherein the pixel electrode comprises indium tin oxide.
7. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
8. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises a crystal region.
9. A semiconductor device comprising:
an oxide semiconductor layer comprising a channel formation region of a transistor;
a first gate electrode below the oxide semiconductor layer;
a second gate electrode over the oxide semiconductor layer;
a source electrode electrically connected to the oxide semiconductor layer;
a drain electrode electrically connected to the oxide semiconductor layer; and
an insulating layer between the first gate electrode and each of the source electrode and the drain electrode,
wherein the first gate electrode comprises a region overlapping with a contact hole in the insulating layer,
wherein the region of the first gate electrode is in contact with one of the source electrode and the drain electrode,
wherein in a plan view of the semiconductor device, the contact hole does not overlap with the oxide semiconductor layer and is located in a region extending in a channel length direction of the transistor from an outer edge of the oxide semiconductor layer, and
wherein an end portion of the oxide semiconductor layer comprises a region which is not in contact with the source electrode or the drain electrode.
10. The semiconductor device according to claim 9 , wherein in the channel length direction of the transistor, the second gate electrode is smaller than the oxide semiconductor layer.
11. The semiconductor device according to claim 9 , wherein in the channel length direction of the transistor, the first gate electrode is larger than the oxide semiconductor layer.
12. The semiconductor device according to claim 9 , wherein the source electrode and the drain electrode are over the oxide semiconductor layer.
13. The semiconductor device according to claim 9 , further comprising a pixel electrode electrically connected to the source electrode or the drain electrode.
14. The semiconductor device according to claim 13 , wherein the pixel electrode comprises indium tin oxide.
15. The semiconductor device according to claim 9 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
16. The semiconductor device according to claim 9 , wherein the oxide semiconductor layer comprises a crystal region.