IP Library › Granted Patent US 12,517,600
Granted Patent B2
US 12,517,600 · App. 18/411,465 · Granted Jan 6, 2026

Display device and control program

Inventors: Takayuki Ikeda (Kanagawa, JP); Yuki Okamoto (Kanagawa, JP); Kei Takahashi (Kanagawa, JP); Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G06F3/0412G06F1/3203G06F1/3265G06F3/04883G02F1/13338Y02D10/00
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Quick Facts
Patent No.
US 12,517,600
App. No.
18/411,465
Granted
Jan 6, 2026
Kind
B2
Abstract

A display device with excellent visibility can be provided. The display device includes a display region displayed by a light-emitting element. In the display region, a point touched by a user is a first point, a point which has been touched by the user prior to the first point is a second point, a vector that starts at the first point and ends at the second point is a first vector, a vector obtained by multiplying the first vector by k (k is a real number) is a second vector, and a point that is the second vector away from the first point is a third point, the display region includes a first region and a second region obtained by excluding the first region from the display region, The first region includes a first circle and a second circle, the center of the first circle is the first point, and the center of the second circle is the third point. The luminance in the first region is higher than the luminance in the second region.

Claims (124)

1 . A display device comprising:

a pixel, the pixel comprising:

a first transistor;

a capacitor electrically connected to the first transistor; and

a light-emitting element,

wherein a first conductive layer and a second conductive layer are provided over a substrate,

wherein the first conductive layer is configured to function as a first gate electrode of the first transistor,

wherein a first insulating layer is provided over the first conductive layer and the second conductive layer,

wherein a first semiconductor layer is provided over the first insulating layer,

wherein the first semiconductor layer comprises a channel formation region of the first transistor,

wherein the first semiconductor layer comprises a metal oxide,

wherein a second insulating layer is provided over the first semiconductor layer,

wherein the second insulating layer is configured to function as a gate insulating layer,

wherein a third conductive layer is provided over the second insulating layer,

wherein the third conductive layer is configured to function as a second gate electrode of the first transistor,

wherein a third insulating layer is provided over the third conductive layer,

wherein the third insulating layer is in contact with a top surface of the first semiconductor layer and a side surface of the second insulating layer,

wherein a fourth conductive layer and a fifth conductive layer are provided over the third insulating layer,

wherein the fourth conductive layer is configured to function as one of a source electrode and a drain electrode of the first transistor,

wherein the fifth conductive layer is configured to function as the other of the source electrode and the drain electrode of the first transistor,

wherein the fourth conductive layer is electrically connected to the second conductive layer,

wherein the fifth conductive layer is electrically connected to a sixth conductive layer,

wherein the sixth conductive layer is provided over a fourth insulating layer,

wherein the fourth insulating layer is provided over the fourth conductive layer and the fifth conductive layer,

wherein the sixth conductive layer is configured to function as a pixel electrode of the light-emitting element,

wherein the fourth conductive layer is electrically connected to the second conductive layer via a first opening provided in the third insulating layer and a second opening provided in the third insulating layer, and

wherein the fifth conductive layer is electrically connected to the sixth conductive layer via a third opening overlapping with the first conductive layer.

2 . A display device comprising:

a pixel, the pixel comprising:

a first transistor;

a capacitor electrically connected to the first transistor; and

a light-emitting element,

wherein a first conductive layer and a second conductive layer are provided over a substrate,

wherein the first conductive layer is configured to function as a first gate electrode of the first transistor,

wherein a first insulating layer is provided over the first conductive layer and the second conductive layer,

wherein a first semiconductor layer is provided over the first insulating layer,

wherein the first semiconductor layer comprises a channel formation region of the first transistor,

wherein the first semiconductor layer comprises a metal oxide,

wherein a second insulating layer is provided over the first semiconductor layer,

wherein the second insulating layer is configured to function as a gate insulating layer,

wherein a third conductive layer is provided over the second insulating layer,

wherein the third conductive layer is configured to function as a second gate electrode of the first transistor,

wherein a third insulating layer is provided over the third conductive layer,

wherein the third insulating layer is in contact with a top surface of the first semiconductor layer and a side surface of the second insulating layer,

wherein a fourth conductive layer and a fifth conductive layer are provided over the third insulating layer,

wherein the fourth conductive layer is configured to function as one of a source electrode and a drain electrode of the first transistor,

wherein the fifth conductive layer is configured to function as the other of the source electrode and the drain electrode of the first transistor,

wherein the fourth conductive layer is electrically connected to the second conductive layer,

wherein the fifth conductive layer is electrically connected to a sixth conductive layer,

wherein the sixth conductive layer is provided over a fourth insulating layer,

wherein the fourth insulating layer is provided over the fourth conductive layer and the fifth conductive layer,

wherein the sixth conductive layer is configured to function as a pixel electrode of the light-emitting element,

wherein the pixel electrode overlaps with the first conductive layer, the second conductive layer, the third conductive layer, the fourth conductive layer, and the fifth conductive layer,

wherein the display device further comprises:

a second semiconductor layer comprising a second channel formation region of a second transistor; and

a seventh conductive layer over and electrically connected to the second semiconductor layer,

wherein the seventh conductive layer is configured to function as one of a source electrode and a drain electrode of the second transistor, and

wherein the seventh conductive layer is electrically connected to one electrode of the capacitor.

3 . A display device comprising:

a pixel, the pixel comprising:

a first transistor;

a capacitor; and

a light-emitting element,

wherein a first conductive layer and a second conductive layer are provided over a substrate,

wherein the first conductive layer is configured to function as a first gate electrode of the first transistor,

wherein a first insulating layer is provided over the first conductive layer and the second conductive layer,

wherein a first semiconductor layer is provided over the first insulating layer,

wherein the first semiconductor layer comprises a channel formation region of the first transistor,

wherein the first semiconductor layer comprises a metal oxide,

wherein a second insulating layer is provided over the first semiconductor layer,

wherein the second insulating layer is configured to function as a gate insulating layer,

wherein a third conductive layer is provided over the second insulating layer,

wherein the third conductive layer is configured to function as a second gate electrode of the first transistor,

wherein a third insulating layer is provided over the third conductive layer,

wherein the third insulating layer is in contact with a top surface of the first semiconductor layer and a side surface of the second insulating layer,

wherein a fourth conductive layer and a fifth conductive layer are provided over the third insulating layer,

wherein the fourth conductive layer is configured to function as one of a source electrode and a drain electrode of the first transistor,

wherein the fifth conductive layer is configured to function as the other of the source electrode and the drain electrode of the first transistor,

wherein the fourth conductive layer is electrically connected to the second conductive layer,

wherein the fifth conductive layer is electrically connected to a sixth conductive layer,

wherein the sixth conductive layer is provided over a fourth insulating layer,

wherein the fourth insulating layer is provided over the fourth conductive layer and the fifth conductive layer,

wherein the sixth conductive layer is configured to function as a pixel electrode of the light-emitting element,

wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to one electrode of the capacitor,

wherein the other electrode of the capacitor is provided below the pixel electrode,

wherein the pixel electrode overlaps with the first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer, the fifth conductive layer, and

wherein a layer comprising a quantum dot overlaps with the pixel electrode.

4 . The display device according to claim 1 ,

wherein a second semiconductor layer is provided over the first insulating layer,

wherein the second semiconductor layer comprises a channel formation region of a second transistor,

wherein the second transistor is provided in a driver circuit, and

wherein the second semiconductor layer comprises a metal oxide.

5 . The display device according to claim 2 ,

wherein the second semiconductor layer is provided over the first insulating layer,

wherein the second transistor is provided in a driver circuit, and

wherein the second semiconductor layer comprises a metal oxide.

6 . The display device according to claim 3 ,

wherein a second semiconductor layer is provided over the first insulating layer,

wherein the second semiconductor layer comprises a channel formation region of a second transistor,

wherein the second transistor is provided in a driver circuit, and

wherein the second semiconductor layer comprises a metal oxide.

7 . The display device according to claim 2 ,

wherein the fourth conductive layer is electrically connected to the second conductive layer via a first opening provided in the third insulating layer and a second opening provided in the third insulating layer, and

wherein the fifth conductive layer is electrically connected to the sixth conductive layer via a third opening overlapping with the first conductive layer.

8 . The display device according to claim 3 ,

wherein the fourth conductive layer is electrically connected to the second conductive layer via a first opening provided in the third insulating layer and a second opening provided in the third insulating layer,

wherein the fifth conductive layer is electrically connected to the sixth conductive layer via a third opening overlapping with the first conductive layer, and

wherein the other electrode of the capacitor is provided over and overlapping with the first semiconductor layer.

9 . The display device according to claim 1 , further comprising:

a second semiconductor layer comprising a second channel formation region of a second transistor; and

a seventh conductive layer over and electrically connected to the second semiconductor layer,

wherein the seventh conductive layer is configured to function as one of a source electrode and a drain electrode of the second transistor, and

wherein the seventh conductive layer is electrically connected to one electrode of the capacitor.

10 . The display device according to claim 3 , further comprising:

a second semiconductor layer comprising a second channel formation region of a second transistor; and

a seventh conductive layer over and electrically connected to the second semiconductor layer,

wherein the seventh conductive layer is configured to function as one of a source electrode and a drain electrode of the second transistor, and

wherein the seventh conductive layer is electrically connected to the other electrode of the capacitor.

11 . The display device according to claim 9 , wherein the seventh conductive layer overlaps with the sixth conductive layer.

12 . The display device according to claim 2 , wherein the seventh conductive layer overlaps with the sixth conductive layer.

13 . The display device according to claim 10 , wherein the seventh conductive layer overlaps with the sixth conductive layer.

14 . The display device according to claim 11 , wherein an opening electrically connecting the seventh conductive layer and the one electrode of the capacitor overlaps with the sixth conductive layer.

15 . The display device according to claim 12 , wherein an opening electrically connecting the seventh conductive layer and the one electrode of the capacitor overlaps with the sixth conductive layer.

16 . The display device according to claim 13 , wherein an opening electrically connecting the seventh conductive layer and the other electrode of the capacitor overlaps with the sixth conductive layer.

Priority Claims (1)
JP 2016-166719 · Aug 29, 2016 · national
Continuity (3)
Continuation 17536664 · Nov 29, 2021
Continuation 15685792 · Aug 24, 2017
Related Publication 20240143100A1 · May 2, 2024
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