Non-volatile semiconductor memory device and manufacturing method thereof
This non-volatile semiconductor memory device includes a memory cell array including NAND cell units formed in a first direction vertical to a surface of a semiconductor substrate. A local source line is electrically coupled to one end of the NAND cell unit formed on the surface of the substrate. The memory cell array includes: a laminated body where plural conductive films, which are to be control gate lines of memory cells or selection gate lines of selection transistors, are laminated sandwiching interlayer insulating films; a semiconductor layer that extends in the first direction; and an electric charge accumulating layer sandwiched between: the semiconductor layer and the conductive film. The local source line includes a silicide layer. The electric charge accumulating layer is continuously formed from the memory cell array to cover a peripheral area of the silicide layer.
1. A non-volatile semiconductor memory device comprising:
a substrate;
a laminated body where a plurality of interlayer insulating films and conductive films are alternately laminated in a first direction, the first direction crossing a surface of the substrate;
a columnar semiconductor film extending in the first direction,
a memory film provided between the columnar semiconductor film and one of the plurality of conductive films;
a first film including silicon and metal and provided between the substrate and a lowermost film of the plurality of conductive films;
a second film including silicon, provided between the first film and the lowermost film of the plurality of conductive films, and being in contact with the first film and one end of the columnar semiconductor film; and
a first insulating film extending through the laminated body in the first direction, extending in a second direction crossing the first direction, and separating the laminated body in a third direction crossing the first and second directions; wherein
the first insulating film extending through the second film in the first direction and being in contact with the first film.
2. The non-volatile semiconductor memory device according to claim 1 , further comprising:
a contact extending in the first direction and extending though the second film in the first direction and being in contact with the first film.
3. The non-volatile semiconductor memory device according to claim 1 , wherein the first insulating film includes silicon and oxygen.
4. The non-volatile semiconductor memory device according to claim 1 , further comprising:
a second insulating film extending inside the laminated body in the first direction and separating only some conductive films of the laminated body.
5. The non-volatile semiconductor memory device according to claim 4 , wherein the first insulating film and the second insulating film are alternately disposed along the third direction.
6. The non-volatile semiconductor memory device according to claim 2 , wherein one end of the contact is in contact with the first film and another end of the contact is in contact with a global source line.
7. The non-volatile semiconductor memory device according to claim 1 , wherein the first film has a hollow portion inside.
8. The non-volatile semiconductor memory device according to claim 1 , wherein the second film includes a diffusion layer.
9. The non-volatile semiconductor memory device according to claim 1 , wherein the first film extends in the third direction.