High voltage monolithic LED chip
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
1. A method for fabricating a lighting device, the method comprising:
separating a plurality of LED active regions of a wafer, wherein LED active regions of the plurality of LED active regions are supported by a structure including one or more insulating material layers, including electrically conductive interconnect elements embedded within said one or more insulating material layers, and a plurality of electrically conductive vias extending from the electrically conductive interconnect elements to contact the plurality of LED active regions, wherein the electrically conductive interconnect elements and the plurality of electrically conductive vias connect at least some LED active regions of the plurality of LED active regions in series, in parallel, or in series-parallel; and
mounting the structure to a submount, with the one or more insulating material layers arranged between the submount and the plurality of LED active regions;
wherein the plurality of electrically conductive vias includes a first group of one or more electrically conductive vias coupled with an n-type layer of the plurality of LED active regions, and a second group of one or more electrically conductive vias coupled with a p-type layer of the plurality of LED active regions; and
wherein each electrically conductive via of the first group of one or more electrically conductive vias comprises a greater height than each electrically conductive via of the second group of one or more electrically conductive vias.
2. The method of claim 1 , wherein the mounting of the structure to the submount comprises flip-chip mounting of the structure to the submount.
3. The method of claim 1 , wherein a reflective layer is arranged between the one or more insulating material layers and the plurality of LED active regions, and at least some electrically conductive vias of the plurality of electrically conductive vias extend through the reflective layer.
4. The method of claim 3 , further comprising providing a current spreading layer between the reflective layer and the plurality of LED active regions.
5. The method of claim 1 , further comprising providing a blanket mirror and/or a bond metal between the submount and the one or more insulating material layers.
6. The method of claim 1 , wherein the electrically conductive interconnect elements and the plurality of electrically conductive vias connect at least some LED active regions of the plurality of LED active regions in series.
7. The method of claim 1 , wherein the electrically conductive interconnect elements and the plurality of electrically conductive vias connect at least some LED active regions of the plurality of LED active regions in parallel.
8. The method of claim 1 , wherein the electrically conductive interconnect elements and the plurality of electrically conductive vias connect at least some LED active regions of the plurality of LED active regions in series-parallel.
9. The method of claim 1 , wherein the electrically conductive interconnect elements comprise metal layer segments within said one or more electrically insulating material layers.
10. The method of claim 1 , wherein at least some adjacent LED active regions of the plurality of LED active regions are separated from one another by a space that is 10 percent or less of a width of one or more LED active regions of the at least some adjacent LED active regions.
11. The method of claim 1 , wherein the lighting device comprises a top side and a bottom side, and is configured to emit LED emissions from the top side, wherein the lighting device further comprises a p-contact pad and an n-contact pad that are accessible along the top side.
12. The method of claim 1 , wherein the lighting device comprises a top side and a bottom side, and is configured to emit LED emissions from the top side, wherein the lighting device further comprises a p-contact pad and an n-contact pad, with one of the p-contact pad or the n-contact pad being accessible along the top side, and the other of the p-contact pad or the n-contact pad being accessible along the bottom side.
13. The method of claim 1 , wherein the lighting device comprises a monolithic LED chip including the plurality of LED active regions.