POLISHING PAD, PREPARATION METHOD THEREOF, AND PREPARATION METHOD OF SEMICONDUCTOR DEVICE USING SAME
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiments, the number average diameter (Da) and number median diameter (Dm) of a plurality of pores are adjusted to achieve a specific range of the Ed value (Equation 1). As a result, an excellent polishing rate and within-wafer non-uniformity can be achieved.
1 . A polishing pad, which comprises a polishing layer comprising a plurality of pores, wherein the plurality of pores have a number average diameter (Da) of 16 μm to less than 30 μm, and the Ed value represented by the following Equation 1 is greater than 0:
Ed =[3×( Da−Dm )]/STDEV [Equation 1]
in Equation 1, Da stands for the number average diameter of the plurality of pores within 1 mm 2 of the polishing surface, Dm stands for a number median diameter of the plurality of pores within 1 mm 2 of the polishing surface, and STDEV stands for a standard deviation of the number average diameter of the plurality of pores within 1 mm of the polishing surface.
2 . The polishing pad of claim 1 , wherein the Ed value represented by the above Equation 1 is greater than 0 to less than 2.
3 . The polishing pad of claim 1 , wherein the Dm is 12 μm to 28 μm, and the STDEV is 5 to 15.
4 . The polishing pad of claim 1 , wherein, in Equation 1, the Da is greater than the Dm by 0.3 μm to 3 μm.
5 . The polishing pad of claim 1 , wherein when, in Equation 1, the Da is 16 μm to less than 21 μm, the Ed value is greater than 0.5 to less than 2.
6 . The polishing pad of claim 1 , wherein when, in Equation 1, the Da is 21 μm to less than 30 μm, the Ed value is 0.1 to 0.5.
7 . The polishing pad of claim 1 , wherein the polishing layer comprises a cured material of a composition comprising a urethane-based prepolymer, a curing agent, and a solid phase foaming agent, and a content of the solid phase foaming agent is 0.7 parts by weight to 2 parts by weight based on 100 parts by weight of the composition.
8 . The polishing pad of claim 7 , wherein the solid phase foaming agent has an average particle diameter of 16 μm to 50 μm, and the standard deviation of the average particle diameter is 12 or less.
9 . The polishing pad of claim 7 , wherein the composition further comprises a reaction rate controlling agent in an amount of 0.05 parts by weight to 2 parts by weight based on 100 parts by weight of the composition, wherein the reaction rate controlling agent comprises at least one selected from a group consisting of triethylenediamine, dimethylethanolamine, tetramethylbutanediamine, 2-methyl-triethylenediamine, dimethylcyclohexylamine, triethylamine, triisopropanolamine, 1,4-diazabicyclo(2,2,2)octane, bis(2-methylaminoethyl) ether, trimethylaminoethylethanolamine, N,N,N,N,N″-pentamethyldiethylenetriamine, dimethylaminoethylamine, dimethylaminopropylamine, benzyldimethylamine, N-ethylmorpholine, N,N-dimethylaminoethylmorpholine, N,N-dimethylcyclohexylamine, 2-methyl-2-azanorbornane, dibutyltin dilaurate, stannous octoate, dibutyltin diacetate, dioctyltin diacetate, dibutyltin maleate, dibutyltin di-2-ethylhexanoate, and dibutyltin dimercaptide.
10 . The polishing pad of claim 1 , which has a polishing rate of 700 Å/min to 900 Å/min for a tungsten layer.
11 . The polishing pad of claim 1 , which has a polishing rate of 2,750 Å/min to 3,200 Å/min for an oxide layer.
12 . A process for preparing a polishing pad, which comprises:
mixing a composition comprising a urethane-based prepolymer, a curing agent, and a solid phase foaming agent, and
injecting the mixed composition into a mold under a reduced pressure to form a polishing layer,
wherein the polishing layer comprises a plurality of pores,
the plurality of pores have a number average diameter (Da) of 16 m to less than 30 μm, and
the Ed value represented by the following Equation 1 is greater than 0:
Ed =[3×( Da−Dm )]/STDEV [Equation 1]
in Equation 1, Da stands for the number average diameter of the plurality of pores within 1 mm 2 of the polishing surface, Dm stands for a number median diameter of the plurality of pores within 1 mm 2 of the polishing surface, and STDEV stands for a standard deviation of the number average diameter of the plurality of pores within 1 mm of the polishing surface.
13 . The process for preparing a polishing pad of claim 12 , wherein a gas phase foaming agent is introduced during the mixing in a volume of 6% to less than 25% based on the total volume of the composition.
14 . A process for preparing a semiconductor device, which comprises:
mounting a polishing pad comprising a polishing layer comprising a plurality of pores on a platen; and
relatively rotating the polishing pad and a semiconductor substrate while a polishing surface of the polishing layer and a surface of the semiconductor substrate are in contact with each other to polish the surface of the semiconductor substrate,
wherein the plurality of pores have a number average diameter (Da) of 16 μm to less than 30 μm, and the Ed value represented by the following Equation 1 is greater than 0:
Ed =[3×( Da−Dm )]/STDEV [Equation 1]
in Equation 1, Da stands for the number average diameter of the plurality of pores within 1 mm 2 of the polishing surface, Dm stands for a number median diameter of the plurality of pores within 1 mm 2 of the polishing surface, and STDEV stands for a standard deviation of the number average diameter of the plurality of pores within 1 mm of the polishing surface.