Semiconductor memory device and method for manufacturing same
A semiconductor memory device includes a semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film, a plurality of first electrode films provided above the first conductive film and stacked to be separated from each other, a semiconductor member extending in a stacking direction of the plurality of first electrode films, and a charge storage member provided between the semiconductor member and one of the plurality of first electrode films. The first conductive film includes a main portion disposed at least below the plurality of first electrode films, and a fine line portion extending from the main portion toward an end surface side of the semiconductor substrate. A width of the fine line portion is narrower than a width of the main portion.
1. A semiconductor memory device, comprising:
a semiconductor substrate;
a first insulating film provided above the semiconductor substrate;
a first conductive film provided above the first insulating film;
a plurality of first electrode films provided above the first conductive film and stacked to be separated from each other;
a semiconductor member extending in the plurality of first electrode films in a first direction perpendicular to a surface of the semiconductor substrate;
a charge storage member provided between the semiconductor member and one of the plurality of first electrode films; and
an edge seal disposed on an edge region of the semiconductor substrate and including a conductive material, wherein
the first conductive film includes:
a first portion disposed at least directly below the plurality of first electrode films, and
a second portion disposed in a second direction of the first portion, the second direction crossing the first direction;
the edge seal divides the first portion and the second portion and extends in a third direction crossing the first direction d the second direction.
2. The device according to claim 1 , wherein
the edge seal is separated from the first portion and the second portion.
3. The device according to claim 1 , wherein
the first portion faces the second portion via the edge seal.
4. The device according to claim 1 , further comprising an insulating member disposed between the first portion and the edge seal, and between the second portion and the edge seal.
5. The device according to claim 1 , wherein
the first portion includes:
a main portion disposed at least below the plurality of first electrode films, and
a fine line portion extending from the main portion toward an end surface side of the semiconductor substrate, a width of the fine line portion being narrower than a width of the main portion.
6. The device according to claim 5 , wherein
the edge seal includes:
a lower part contacting the semiconductor substrate; and
an upper part provided on the lower part and connected to the lower part; and
protruding portions of a lower surface of the upper part are formed to protrude downward in two regions, a region directly under a region between the fine line portion the second portion being located between the two regions.
7. The device according to claim 5 , wherein
the fine line portion has no current supply point in an interior thereof.