Image pickup element, method of manufacturing image pickup element, and electronic apparatus
An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.
1. An imaging device, comprising:
a substrate including a plurality of photoelectric conversion regions, the plurality of photoelectric conversion regions including a first photoelectric conversion region and a second photoelectric conversion region;
a trench disposed between the first photoelectric conversion region and the second photoelectric conversion region;
a first film including silicon oxide disposed in the trench and contacting the substrate;
a second film disposed in the trench and above the first film; and
a third film disposed in the trench and above the second film,
wherein the second film includes at least one of a group consisting of: hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, and tantalum oxide, and
wherein the third film includes at least one of the group consisting of: hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, and tantalum oxide.
2. The imaging device according to claim 1 , further comprising a fourth film disposed in the trench and above the third film.
3. The imaging device according to claim 2 , wherein the fourth film includes at least one of the group consisting of: hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, and tantalum oxide.
4. The imaging device according to claim 3 , further comprising a fifth film including a silicon oxide disposed in the trench and above the fourth film.
5. The imaging device according to claim 1 , wherein the first film is further disposed above a light receiving surface of the substrate.
6. The imaging device according to claim 5 , wherein the second film is further disposed above the first film, and wherein the second film is disposed above the light receiving surface of the substrate.
7. The imaging device according to claim 6 , wherein the third film is further disposed above the second film, and wherein the third film is disposed above the light receiving surface of the substrate.
8. The imaging device according to claim 3 , wherein the first film is further disposed above a light receiving surface of the substrate, the second film is further disposed above the first film, the third film is further disposed above the second film, and the fourth film further is disposed above the third film, and wherein the first film, the second film, the third film, and the fourth film are disposed above the light receiving surface of the substrate.
9. The imaging device according to claim 8 , further comprising a fifth film, wherein the fifth film is further disposed above the fourth film, and wherein the fifth film is disposed above the light receiving surface of the substrate.
10. The imaging device according claim 4 , further comprising a light shielding film disposed above the fifth film at the light receiving surface.
11. The imaging device according to claim 10 , wherein the light shielding film is disposed corresponding to the trench.
12. The imaging device according to claim 8 , wherein the fourth film has a first thickness above the light receiving surface and the fourth film has a second thickness in the trench, and wherein, the first thickness is greater than the second thickness.
13. The imaging device according to claim 1 , wherein the second film and the third film include different materials.
14. The imaging device according to claim 1 , wherein the second film and the third film include a same material.
15. The imaging device according to claim 3 , wherein the second film, the third film, and the fourth film include different materials.
16. The imaging device according to claim 3 , wherein the second film and the fourth film include a same material.
17. The imaging device according to claim 3 , wherein the third film and the fourth film include a same material.
18. The imaging device according to claim 1 , wherein the second film includes aluminum oxide.
19. The imaging device according to claim 1 , wherein the third film includes hafnium oxide.
20. The imaging device according to claim 3 , wherein the fourth film includes tantalum oxide.
21. The imaging device according to claim 3 , wherein the fourth film is disposed only above a part of the third film in the trench.
22. An electric apparatus provided with an imaging device according to claim 1 .