Organometallic adduct compound and method of manufacturing integrated circuit using the same
An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R 1 , R 2 , and R 3 are each independently a C1 to C5 alkyl group, at least one of R 1 , R 2 , and R 3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.
1. An organometallic adduct compound represented by General formula (I):
wherein, in General formula (I),
R 1 , R 2 , and R 3 are each independently a C1 to C5 alkyl group, at least one of R 1 , R 2 , and R 3 being a branched C3 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom,
M is a niobium atom, a tantalum atom, or a vanadium atom,
X is a halogen atom,
m is an integer of 3 to 5, and
n is 1 or 2.
2. The organometallic adduct compound as claimed in claim 1 , wherein, in General formula (I):
M is a niobium atom or a tantalum atom, and
X is a fluorine atom or a chlorine atom.
3. The organometallic adduct compound as claimed in claim 1 , wherein R 1 , R 2 , and R 3 are each independently a hexafluoroisopropyl group or a nonafluoro tert-butyl group.
4. The organometallic adduct compound as claimed in claim 1 , wherein, in General formula (I), m is 5, and n is 1.
5. The organometallic adduct compound as claimed in claim 1 , wherein, in General formula (I):
M is a niobium atom or a tantalum atom,
X is a fluorine atom, and
R 1 , R 2 , and R 3 are each independently a branched C3 to C5 alkyl group.
6. The organometallic adduct compound as claimed in claim 1 , wherein, in General formula (I):
M is a niobium atom or a tantalum atom,
X is a chlorine atom, and
R 1 , R 2 , and R 3 are each independently a branched C3 to C5 alkyl group in which all hydrogen atoms are substituted with fluorine atoms.
7. The organometallic adduct compound as claimed in claim 1 , wherein, in General formula (I):
M is a niobium atom or a tantalum atom,
X is a fluorine atom, and
R 1 , R 2 , and R 3 are each independently a branched C3 to C5 alkyl group in which all hydrogen atoms are substituted with fluorine atoms.
8. The organometallic adduct compound as claimed in claim 1 ,
wherein the organometallic adduct compound is a liquid at about 20° C. to about 28° C.
9. A method of manufacturing an integrated circuit (IC) device, the method comprising forming a metal-containing film on a substrate using an organometallic adduct compound represented by General formula (I),
wherein, in General formula (I),
R 1 , R 2 , and R 3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a branched C3 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom,
M is a niobium atom, a tantalum atom, or a vanadium atom,
X is a halogen atom,
m is an integer of 3 to 5, and
n is 1 or 2.
10. The method as claimed in claim 9 , wherein the organometallic adduct compound is a liquid at about 20° C. to about 28° C.
11. The method as claimed in claim 9 , wherein, in General formula (I):
M is a niobium atom or a tantalum atom, and
X is a fluorine atom or a chlorine atom.
12. The method as claimed in claim 9 , wherein R 1 , R 2 , and R 3 are each independently a hexafluoroisopropyl group or a nonafluoro tert-butyl group.
13. The method as claimed in claim 9 , wherein, in General formula (I), m is 5, and n is 1.
14. The method as claimed in claim 9 , wherein forming the metal-containing film includes:
supplying the organometallic adduct compound of General formula (I) onto the substrate; and
supplying a reactive gas onto the substrate.
15. The method as claimed in claim 14 , wherein the reactive gas includes NH 3 , N 2 plasma, an organic amine compound, a hydrazine compound, or a combination thereof.
16. The method as claimed in claim 14 , wherein the reactive gas includes O 2 , O 3 , O 2 plasma, H 2 O, NO 2 , NO, N 2 O, CO, CO 2 , H 2 O 2 , HCOOH, CH 3 COOH, (CH 3 CO) 2 O, an alcohol, a peroxide, sulfur oxide, or a combination thereof.
17. The method as claimed in claim 14 , wherein the reactive gas includes H 2 .