Conductive feature formation and structure using bottom-up filling deposition
The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
1 . A structure comprising:
a first dielectric layer over a substrate;
a first conductive feature and a second conductive feature each extending through the first dielectric layer, the first conductive feature and the second conductive feature each comprising a first metal;
a second dielectric layer over the first dielectric layer;
a third conductive feature extending through the second dielectric layer having a first lower convex surface extending into the first conductive feature, wherein the third conductive feature comprises a second metal different from the first metal, wherein the second metal of the third conductive feature extends continuously from a first sidewall of the second dielectric layer to a second sidewall of the second dielectric layer, and wherein the third conductive feature has a first width at a topmost surface of the second dielectric layer;
a fourth conductive feature extending through the second dielectric layer having a second lower convex surface extending into the second conductive feature, wherein the fourth conductive feature comprises the second metal, wherein the second metal of the fourth conductive feature extends continuously from a third sidewall of the second dielectric layer to a fourth sidewall of the second dielectric layer, and wherein the fourth conductive feature has a second width different than the first width at the topmost surface of the second dielectric layer; and
a liner along sidewalls and a bottom surface of the first conductive feature, wherein the third conductive feature touches a first sidewall of the liner below a top surface of the liner.
2 . The structure of claim 1 , wherein the third conductive feature is a seam-free structure.
3 . The structure of claim 1 , wherein the first conductive feature comprises cobalt, and the third conductive feature comprises tungsten.
4 . The structure of claim 1 , wherein the first conductive feature is a gate contact, wherein the second conductive feature is a source/drain contact, and wherein the second width is less than the first width.
5 . The structure of claim 4 , wherein the third conductive feature extends lower than the fourth conductive feature.
6 . The structure of claim 1 further comprising an etch stop layer between the first dielectric layer and the second dielectric layer, wherein the third conductive feature extends laterally under the etch stop layer and separates the first conductive feature from the etch stop layer.
7 . The structure of claim 6 , wherein the third conductive feature having a first portion in the second dielectric layer and a second portion below the second dielectric layer, the second portion being wider than the first portion.
8 . The structure of claim 1 , wherein the third conductive feature is free of any conductive liners, wherein the liner along sidewalls and the bottom surface of the first conductive feature is a conductive liner.
9 . A structure comprising:
a first dielectric layer over a substrate;
a first conductive feature extending through the first dielectric layer;
a conductive liner on sidewalls and a bottom surface of the first conductive feature;
a second dielectric layer over the first dielectric layer;
a second conductive feature extending through the second dielectric layer and having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature contacts a first sidewall of the conductive liner of the first conductive feature and contacts a second sidewall of the conductive liner of the first conductive feature; and
an etch stop layer between the first dielectric layer and the second dielectric layer, wherein the lower convex surface extends directly under the etch stop layer, and the lower convex surface contacts the first and second sidewalls of the conductive liner in an upper portion of the first conductive feature.
10 . The structure of claim 9 , wherein the second conductive feature has a different material composition than the first conductive feature, the second conductive feature has a first portion in the second dielectric layer and a second portion below the second dielectric layer, the second portion being wider than the first portion.
11 . The structure of claim 9 , wherein the conductive liner of the first conductive feature comprises:
a diffusion barrier layer on sidewalls and the bottom surface of the first conductive feature; and
an adhesion layer between the diffusion barrier layer and the first dielectric layer.
12 . The structure of claim 9 , wherein the second conductive feature is free of any conductive liners.
13 . The structure of claim 9 , wherein the second conductive feature is free of seams.
14 . A structure comprising:
a gate structure on a substrate;
a first dielectric layer surrounding the gate structure;
a second dielectric layer over the first dielectric layer;
a first conductive feature extending through the second dielectric layer to the gate structure, wherein the second dielectric layer extends from a level of the gate structure to a level of a top surface of the first conductive feature;
a conductive liner along sidewalls and a bottom surface of the first conductive feature;
a third dielectric layer over the first dielectric layer; and
a second conductive feature extending through the third dielectric layer and having a first lower convex surface extending into the first conductive feature, wherein the first lower convex surface of the second conductive feature extends from a first sidewall of the conductive liner to a second sidewall of the conductive liner, wherein the second conductive feature has a first portion in the third dielectric layer and a second portion below the third dielectric layer, the second portion being wider than the first portion, wherein the first lower convex surface includes tip ends that extend laterally underneath a bottom surface of the third dielectric layer, the tip ends having a width from 1 nm to 5 nm, and wherein the second conductive feature directly contacts the first conductive feature without an intervening barrier layer or adhesion layer.
15 . The structure of claim 14 , wherein the first conductive feature is made of a different material than the second conductive feature.
16 . The structure of claim 14 further comprising an etch stop layer between the second dielectric layer and the third dielectric layer, wherein the etch stop layer contacts a lateral surface of the second conductive feature.
17 . The structure of claim 16 , wherein the first lower convex surface contacts a bottom surface of the etch stop layer.
18 . The structure of claim 16 , wherein the etch stop layer contacts a top surface of the conductive liner.
19 . The structure of claim 14 further comprising:
a third conductive feature extending through the first dielectric layer and the second dielectric layer; and
a fourth conductive feature extending through the third dielectric layer and having a second lower convex surface extending into the third conductive feature.
20 . The structure of claim 19 , wherein the third conductive feature extends to a top surface of a source/drain region.