CMP composition including a novel abrasive
A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.
1. A chemical mechanical polishing composition comprising:
a liquid carrier;
colloidal silica particles dispersed in the liquid carrier, the colloidal silica particles having a positive charge of at least 10 mV in the liquid carrier;
an iron-containing accelerator;
a metal etch inhibitor; and
wherein the colloidal silica particles have (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42.
2. The composition of claim 1 , wherein the colloidal silica particles have a number average aspect ratio of greater than about 1.35.
3. The composition of claim 1 , wherein the colloidal silica particles have a normalized particle size span by weight of greater than about 0.6.
4. The composition of claim 1 , wherein the colloidal silica particles have (i) a number average aspect ratio of greater than about 1.35 and a normalized particle size span by weight of greater than about 0.6.
5. The composition of claim 1 , wherein the colloidal silica particles have a particle size distribution by number in which D50 is in a range from about 20 nm to about 60 nm.
6. The composition of claim 1 , wherein the colloidal silica particles have a particle size distribution by weight in which D50 is in a range from about 60 nm to about 140 nm.
7. The composition of claim 1 , wherein:
the colloidal silica particles comprise a blend of first colloidal silica particles and second colloidal silica particles;
the first colloidal silica particles having a number average aspect ratio of greater than about 1.35; and
the second colloidal silica particles having a number average aspect ratio of less than about 1.15.
8. The composition of claim 7 , wherein the first colloidal silica particles and the second colloidal silica particles are blended in a weight ratio ranging from about 1:15 to about 1:1.
9. The composition of claim 7 , wherein:
the first colloidal silica particles have a normalized particle size span by weight of less than about 0.42; and
the second colloidal silica particles have a normalized particle size span by weight of less than about 0.42.
10. The composition of claim 1 , wherein the colloidal silica particles have a permanent positive charge of at least 10 mV.
11. The composition of claim 1 , wherein the iron-containing accelerator comprises a soluble iron-containing catalyst and the composition further comprises a stabilizer bound to the soluble iron-containing catalyst, the stabilizer being selected from the group consisting of phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof.
12. The composition of claim 1 , further comprising a hydrogen peroxide oxidizer.
13. The composition of claim 1 , having a pH in a range from about 1.0 to about 5.0.
14. The composition of claim 1 , wherein the metal etch inhibitor is polylysine.
15. A chemical mechanical polishing composition comprising:
a liquid carrier;
colloidal silica particles dispersed in the liquid carrier, the colloidal silica particles having a positive charge of at least 10 mV in the liquid carrier;
an iron-containing accelerator;
a metal etch inhibitor;
wherein the colloidal silica particles have a normalized particle size span of greater than about 0.42; and
wherein at least 15% of the colloidal silica particles include three or more aggregated primaries.
16. The composition of claim 15 , wherein the colloidal silica particles have a normalized particle size span of greater than about 0.6.
17. The composition of claim 15 , wherein less than 50% of the colloidal silica particles are monomers.
18. The composition of claim 15 , wherein:
the colloidal silica particles have a normalized particle size span of greater than about 0.6; and
less than 50% of the colloidal silica particles are monomers.
19. The composition of claim 15 , wherein the colloidal silica particles have a number average aspect ratio of greater than about 1.25.
20. The composition of claim 15 , further comprising a hydrogen peroxide oxidizer.
21. The composition of claim 15 , having a pH in a range from about 1.0 to about 5.0.
22. The composition of claim 15 , wherein the metal etch inhibitor is polylysine.
23. A chemical mechanical polishing composition comprising:
a liquid carrier;
colloidal silica particles dispersed in the liquid carrier, the colloidal silica particles having a positive charge of at least 10 mV in the liquid carrier; and
wherein the colloidal silica particles have (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42.
24. The composition of claim 23 , wherein the number average aspect ratio is greater than 1.35 and the normalized particle size span by weight is greater than about 0.6.
25. The composition of claim 23 , wherein at least 15% of the colloidal silica particles include three or more aggregated primaries.
26. The composition of claim 23 , wherein:
the colloidal silica particles comprise a blend of first colloidal silica particles and second colloidal silica particles;
the first colloidal silica particles having a number average aspect ratio of greater than about 1.35; and
the second colloidal silica particles having a number average aspect ratio of less than about 1.1.
27. The composition of claim 26 , wherein the first colloidal silica particles and the second colloidal silica particles are blended in a weight ratio ranging from about 1:15 to about 1:1.
28. A method of chemical mechanical polishing a substrate, the method comprising:
(a) contacting the substrate with a polishing composition comprising:
(i) a liquid carrier;
(ii) colloidal silica particles dispersed in the liquid carrier, the colloidal silica particles having a positive charge of at least 10 mV in the liquid carrier; and
(iii) wherein the colloidal silica particles have (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42;
(b) moving the polishing composition relative to the substrate; and
(c) abrading the substrate to remove a portion of at least one layer from the substrate and thereby polish the substrate.
29. The method of claim 28 , wherein:
the substrate comprises a tungsten layer;
the composition further comprises an iron-containing accelerator and a tungsten etch inhibitor; and
a portion of the tungsten layer is removed from the substrate while abrading in (c).
30. The method of claim 29 , wherein the tungsten inhibitor is polylysine.
31. The method of claim 28 , wherein the number average aspect ratio is greater than 1.35 and the normalized particle size span by weight is greater than about 0.6.
32. The method of claim 28 , wherein at least 15% of the colloidal silica particles include three or more aggregated primaries.