Methods of manufacturing bulk acoustic wave resonators with patterned mass loading layers
Methods of manufacturing bulk acoustic wave resonators are disclosed. During a common processing step, a first patterned mass loading layer for a first bulk acoustic wave resonator is formed and a second patterned mass loading layer for a second bulk acoustic wave resonator is formed. The first patterned mass loading layer has a different density than the second patterned mass loading layer.
1. A method of manufacturing bulk acoustic wave resonators, the method comprising:
providing a bulk acoustic wave resonator structure including a support substrate; and
during a common processing step, forming (i) a first patterned mass loading layer on the bulk acoustic wave resonator structure in a first area for a first bulk acoustic wave resonator, the first patterned mass loading layer having a duty factor in a range from 0.05 to 0.95 in a main acoustically active region of the first bulk acoustic wave resonator, and (ii) a second patterned mass loading layer on the bulk acoustic wave resonator structure in a second area for a second bulk acoustic wave resonator, the second patterned mass loading layer having a different density than the first patterned mass loading layer.
2. The method of claim 1 wherein the bulk acoustic wave resonator structure includes a passivation layer and an electrode layer.
3. The method of claim 2 wherein the bulk acoustic wave resonator structure includes a piezoelectric layer.
4. The method of claim 3 wherein the bulk acoustic wave resonator structure includes a second electrode layer, the piezoelectric layer being positioned between the electrode layer and the second electrode layer.
5. The method of claim 4 wherein the bulk acoustic wave resonator structure includes a second passivation layer over the second electrode layer.
6. The method of claim 1 wherein the first patterned mass loading layer includes a different material than any layer of the first bulk acoustic wave resonator that is in physical contact with the first patterned mass loading layer.
7. The method of claim 1 wherein the first patterned mass loading layer and a layer of the bulk acoustic wave resonator structure that is in physical contact with the first patterned mass loading layer are both of a same material.
8. The method of claim 1 further comprising forming, during the common processing step, a third patterned mass loading layer over the bulk acoustic wave resonator structure in a third area for a third bulk acoustic wave resonator, the third patterned mass loading layer having a different density than both the first and second patterned mass loading layers.
9. The method of claim 1 wherein the common processing step includes depositing material of the first and second patterned mass loading layers.
10. The method of claim 1 wherein the common processing step includes removing material to form the first and second patterned mass loading layers.
11. The method of claim 1 further comprising:
forming, during the common processing step, a third patterned mass loading layer over the bulk acoustic wave resonator structure in a third area for a third bulk acoustic wave resonator; and
removing material to increase a depth between features of the third patterned mass loading layer.
12. The method of claim 11 wherein the depth between the features of the third patterned mass loading layer is greater than a depth between features of the first patterned mass loading layer.
13. The method of claim 1 wherein the first patterned mass loading layer has a periodic pattern.
14. The method of claim 1 wherein the first patterned mass loading layer includes a plurality of strips spaced apart from each other.
15. The method of claim 1 further comprising interconnecting a plurality of bulk acoustic wave resonators such that the first and second bulk acoustic wave resonators are included in a common filter.
16. The method of claim 1 wherein, after manufacture, the first patterned mass loading layer impacts a resonant frequency of the first bulk acoustic wave resonator and the second patterned mass loading layer impacts a resonant frequency of the second bulk acoustic wave resonator, and the resonant frequency of the first bulk acoustic wave resonator is in a range from 0.1% to 10% greater than the resonant frequency of the second bulk acoustic wave resonator.
17. The method of claim 1 wherein the first patterned mass loading layer has a duty factor in a range from 0.2 to 0.8 in the main acoustically active region of the first bulk acoustic wave resonator.
18. The method of claim 1 wherein the second patterned mass loading layer has a duty factor in a range from 0.05 to 0.95 in a main acoustically active region of the second bulk acoustic wave resonator.
19. A method of manufacturing bulk acoustic wave resonators, the method comprising:
providing a bulk acoustic wave resonator structure including a support substrate; and
during a common processing step, depositing material to form (i) a first patterned mass loading layer over the bulk acoustic wave resonator structure in a first area for a first bulk acoustic wave resonator, the first patterned mass loading layer having a duty factor in a range from 0.05 to 0.95 in a main acoustically active region of the first bulk acoustic wave resonator, and (ii) a second patterned mass loading layer over the bulk acoustic wave resonator structure in a second area for a second bulk acoustic wave resonator, the second patterned mass loading layer having a duty factor in a range from 0.2 to 0.8 in a main acoustically active region of the second bulk acoustic wave resonator, and the second patterned mass loading layer having a different density than the first patterned mass loading layer.
20. A method of manufacturing bulk acoustic wave resonators, the method comprising:
providing a bulk acoustic wave resonator structure including a support substrate; and
during a common processing step, etching material to form (i) a first patterned mass loading layer on the bulk acoustic wave resonator structure in a first area for a first bulk acoustic wave resonator, the first patterned mass loading layer having a duty factor in a range from 0.05 to 0.95 in a main acoustically active region of the first bulk acoustic wave resonator, and (ii) a second patterned mass loading layer on the bulk acoustic wave resonator structure in a second area for a second bulk acoustic wave resonator, the second patterned mass loading layer having a duty factor in a range from 0.2 to 0.8 in a main acoustically active region of the second bulk acoustic wave resonator, and the second patterned mass loading layer having a different density than the first patterned mass loading layer.