Composite transistor with electrodes extending to active regions
Disclosed herein is a composite transistor which includes a first transistor TR 1 including a control electrode, a first active region, a first A extending part, and a first B extending part, and a second transistor TR 2 including a control electrode, a second active region, a second A extending part, and a second B extending part. The first active region, the second active region, and the control electrode overlap one another. Both the first A extending part and the first B extending part extend from the first active region and both the second A extending part and the second B extending part extend from the second active region. The first electrode is connected to the first A extending part, the second electrode is connected to the second A extending part, and the third electrode is connected to the first B extending part and the second B extending part.
1. A composite transistor, comprising:
a control electrode;
a first electrode;
a second electrode;
a third electrode;
a first A extending part, wherein the first A extending part extends from the first electrode to a first A active region;
a second A extending part, wherein the second A extending part extends from the second electrode to a second A active region;
a first B extending part, wherein the first B extending part extends from the third electrode to a first B active region; and
a second B extending part, wherein the second B extending part extends from the third electrode to a second B active region.
2. The composite transistor according to claim 1 , wherein the control electrode, the first B active region, the first A active region, the second B active region, and the second A active region are stacked with one another, with the first B active region between the control electrode and the first A active region, with the first A active region between the first B active region and the second B active region, and with the second B active region between the first A active region and the second A active region.
3. The composite transistor according to claim 2 , wherein an insulating layer is disposed between the control electrode and the first B active region.
4. The composite transistor according to claim 1 , wherein the first A active region and the first B active region are disposed on a first virtual plane, and wherein a first boundary region disposed on the first virtual plane is interposed between the first A active region and the first B active region.
5. The composite transistor according to claim 4 , wherein the second A active region and the second B active region are disposed on a second virtual plane, and wherein a second boundary region disposed on the second virtual plane is interposed between the second A active region and the second B active region.
6. The composite transistor according to claim 5 , wherein the first boundary region is between the control electrode and the second boundary region.
7. The composite transistor according to claim 6 , wherein the first A active region and the first B active region are in contact with each other, and wherein the second A active region and the second B active region are not in contact with each other.
8. The composite transistor according to claim 4 , wherein the first active region and the second active region include a two-dimensional material or graphene.
9. The composite transistor according to claim 8 ,
wherein a first interlayer insulation layer is provided between the first A active region and the first B active region, and
a second interlayer insulation layer is provided between the second A active region and the second B active region.
10. The composite transistor according to claim 1 , wherein a first transistor that includes the control electrode, the first A active region, the first A extending part, and the first B extending part becomes conductive and a second transistor that includes the control electrode, the second A active region, the second A extending part, and the second B extending part becomes non-conductive when the first electrode is given a voltage higher than a voltage given to the second electrode and the control electrode is given a first voltage, and the second transistor becomes conductive and the first transistor becomes non-conductive when the control electrode is given a second voltage higher than the first voltage.
11. The composite transistor according to claim 1 , wherein the first active region and the second active region include a two-dimensional material or graphene.
12. The composite transistor of claim 1 , wherein a second insulation layer is provided between the first active region and the second active region.
13. The composite transistor according to claim 12 ,
wherein a first interlayer insulation layer is provided between the first A active region and the first B active region, and
a second interlayer insulation layer is provided between the second A active region and the second B active region.