Resistive random access memory device
A resistive random access memory (ReRAM) device that minimizes filament formation at the edges of the dielectric. The device has a bottom electrode and a top electrode with a switching layer disposed therebetween. The bottom electrode also has first and second sidewalls spaced apart by a first distance where the sidewalls contact the bottom surface of the switching layer. The switching layer has first and second sidewalls spaced apart with the top electrode disposed over the switching layer. The first sidewall of the switching layer overhangs the first sidewall of the bottom electrode by an overhang distance of 5 nanometers or more, and the second sidewall of the switching layer overhangs the second sidewall of the bottom electrode by an overhang distance of 5 nanometers or more.
1 . A resistive random access memory (ReRAM) device, comprising:
a bottom electrode and a top electrode with a switching layer disposed therebetween;
the bottom electrode having a top surface in contact with a bottom surface of the switching layer, and the bottom electrode further having a bottom surface, wherein the top surface of the bottom electrode overhangs the bottom surface of the bottom electrode at, at least, a predetermined overhang distance;
wherein the top electrode disposed over the switching layer;
one or more liners disposed over first and second sidewalls and a bottom surface of the bottom electrode, the one or more liners having first and second distal ends that are in contact with the bottom surface of the switching layer;
wherein the one or more liners are each composed of a material that does not react with the switching layer when in contact with the switching layer; and
wherein, upon an electric field being applied between the top electrode and bottom electrode, a filament of oxygen atoms forms a controllable conductive path between the top electrode and bottom electrode, and selectively varying characteristics of the electric field moves oxygen atoms into and out of the filament to control a conductivity of the top electrode and bottom electrode between a high resistive state and a low resistive state.
2 . The ReRAM device of claim 1 , comprising:
the bottom electrode having a first sidewall and second sidewall spaced apart by a first distance where the first sidewall and second sidewall contact the bottom surface of the switching layer; and
the switching layer having first and second sidewalls spaced apart by a second distance that is larger than the first distance.
3 . The ReRAM device of claim 1 , comprising an oxygen exchange layer (OEL) disposed between the switching layer and the top electrode, wherein the OEL reacts with the switching layer to remove some of the oxygen atoms from an upper portion of the switching layer.
4 . The ReRAM device of claim 1 , wherein the switching layer is composed of at least one of hafnium oxide, tantalum oxide, titanium oxide and niobium oxide.
5 . The ReRAM device of claim 1 , wherein the top and bottom electrodes are composed of at least one of tungsten, copper and titanium nitride.
6 . The ReRAM device of claim 1 , wherein the one or more liners are composed of at least one of titanium nitride, tantalum nitride, iridium and ruthenium.
7 . The ReRAM device of claim 1 , wherein the switching layer is in a thickness within a range of 2 to 20 nanometers.
8 . The ReRAM device of claim 1 , wherein the top and bottom electrodes are each at a thickness in a range of 5 to 200 nanometers.
9 . A semiconductor structure, comprising:
a bottom electrode having a top surface and a bottom surface, and a first sidewall and second sidewall spaced apart by a first distance;
a top electrode above the bottom electrode;
a switching layer between the top electrode and bottom electrode, the switching layer having a top surface and bottom surface, the switching layer having a first sidewall and second sidewall spaced apart by a second distance that is larger than the first distance of the bottom electrode;
wherein the top surface of the bottom electrode in contact with the bottom surface of the switching layer, and the first sidewall and second sidewall of the bottom electrode contact the bottom surface of the switching layer;
wherein the top electrode disposed over the switching layer;
wherein the first sidewall of the switching layer overhangs the first sidewall of the bottom electrode by a predetermined overhang distance;
wherein the second sidewall of the switching layer overhangs the second sidewall of the bottom electrode by a predetermined overhang distance; and
wherein, upon an electric field being applied between the top electrode and bottom electrode, a filament of oxygen atoms forms a controllable conductive path between the top electrode and bottom electrode, and selectively varying characteristics of the electric field move oxygen atoms into and out of the filament to control a conductivity of the top electrode and bottom electrode between a high resistive state and a low resistive state.
10 . The semiconductor structure of claim 9 , wherein:
the predetermined overhang distance of the first sidewall of the switching layer overhanging the first sidewall of the bottom electrode is 10 nanometers or more; and the predetermined overhang distance of the second sidewall of the switching layer overhanging the second sidewall of the bottom electrode is of 10 nanometers or more.