Semiconductor device, fabrication process, and electronic device
A semiconductor device is provided, including a semiconductor substrate that includes a semiconductor; an electrode layer formed above a first surface side inside the semiconductor substrate; a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate; a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween.
1. A semiconductor device, comprising:
a semiconductor substrate that includes a semiconductor;
an electrode layer formed above a first surface side inside the semiconductor substrate;
a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate;
a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and
a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the hole, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween.
2. The semiconductor device according to claim 1 , further comprising a frame layer laminated on the first surface of the semiconductor substrate, wherein the frame layer is a sealant configured to bond a glass substrate to the first surface of the semiconductor substrate.
3. The semiconductor device according to claim 2 , wherein the conductor layer fills an aperture portion in the sealant.
4. The semiconductor device according to claim 3 , wherein the conductor layer includes silver or copper.
5. The semiconductor device according to claim 3 , wherein the conductor layer is substantially the same thickness as the sealant.
6. The semiconductor device according to claim 3 , wherein the conductor layer has a thickness of about 50 μm.
7. The semiconductor device according to claim 1 , wherein the electrical connection between the electrode layer and the conductor layer is only at the end portion of the hole, the end portion being located within the conductor layer.
8. The semiconductor device according to claim 7 , wherein the end portion located within the conductor layer is disposed above an uppermost surface of the electrode layer.
9. The semiconductor device according to claim 1 , wherein the hole extends into a portion of the conductor layer.
10. The semiconductor device according to claim 9 , wherein the hole perforates the electrode layer.
11. The semiconductor device according to claim 9 , wherein the insulating layer is disposed around the wiring layer in the hole and extends into the portion of the conductor layer.
12. The semiconductor device according to claim 11 , wherein the insulating layer extends above an uppermost surface of the electrode layer.
13. The semiconductor device according to claim 1 , wherein the conductor layer is a material having a melting point greater than 1,410° C.
14. The semiconductor device according to claim 1 , wherein the conductor layer is a material having a melting point less than or equal to about 1,410° C.
15. The semiconductor device according to claim 1 , wherein the conductor layer is in the form of a paste material.
16. The semiconductor device according to claim 1 , wherein the electrode layer includes aluminum, copper, tungsten, nickel, or tantalum, or a combination thereof.
17. A semiconductor device, comprising:
a silicon layer;
a film on the silicon layer;
an electrode formed inside the film;
a conductor layer formed under the electrode and above a first surface of the silicon layer;
a hole formed through the silicon layer from a second surface of the silicon layer to the conductor layer, the second surface of the silicon layer being opposite to the first surface of the silicon layer; and
a wiring layer that is electrically connected to the electrode via the conductor layer at an end portion of the hole, and that extends to the second surface of the silicon layer, the wiring layer being physically separated from the silicon layer and a portion of the conductor layer by an insulating layer disposed therebetween,
wherein the wiring layer penetrates the silicon layer and projects from the first surface of the silicon layer.
18. The semiconductor device of claim 17 , wherein, in a cross-sectional view, the conductor layer directly covers an entire bottom surface of the electrode.
19. The semiconductor device of claim 17 , wherein the conductor layer includes at least one of titanium nitride, tantalum nitride, Ag, and Cu.