Device and method for determining placements of pattern elements of a reflective photolithographic mask in the operating environment thereof
The present application relates to a device for determining placements of pattern elements of a reflective photolithographic mask in the operating environment thereof, wherein the device comprises: (a) at least one first means configured for determining surface unevenness data of a rear side of the reflective photolithographic mask and/or surface unevenness data of a mount of the reflective photolithographic mask in a measurement environment that does not correspond to the operating environment; (b) at least one second means configured for determining placement data of the pattern elements in the measurement environment; and (c) at least one computing unit configured for calculating the placements of the pattern elements of the reflective photolithographic mask in the operating environment from the determined surface unevenness data of the rear side and/or of the mount and the determined placement data.
1. A device for determining placements of pattern elements of a reflective photolithographic mask in the operating environment thereof, comprising:
a. at least one first means configured for determining surface unevenness data of a rear side of the reflective photolithographic mask and/or surface unevenness data of a mount of the reflective photolithographic mask when the mask is disposed in a measurement environment that does not correspond to the operating environment of the reflective photolithographic mask;
wherein the operating environment is located in an exposure system of a lithography device, and the measurement environment is located outside of the operating environment;
b. at least one second means configured for determining placement data of the pattern elements of the mask when the mask is disposed in the measurement environment; and
c. at least one computing unit configured for calculating the placements of the pattern elements of the reflective photolithographic mask when the mask is disposed in the operating environment from the determined surface unevenness data of the rear side and/or of the mount and the determined placement data;
wherein the at least one first means is configured to determine at least one of (i) the surface unevenness data of the rear side of the reflective photolithographic mask held by a first mount in the measurement environment, or (ii) the surface unevenness data of the first mount in the measurement environment;
wherein the at least one computing unit is configured to calculate the placements of the pattern elements of the reflective photolithographic mask held by a second mount in the operating environment from the determined placement data and at least one of (i) the determined surface unevenness data of the rear side of the reflective photolithographic mask, or (ii) the determined surface unevenness data of the first mount.
2. The device of claim 1 , wherein the at least one second means is additionally configured to determine surface unevenness data of a front side of the reflective photolithographic mask, and the computing unit is furthermore configured to take account of the determined surface unevenness data of the front side when calculating the placements of the pattern elements.
3. The device of claim 1 , wherein the at least one first means and/or the at least one second means are/is configured to obtain the surface unevenness data of the rear side, of the front side and/or of the mount and also the placements of the pattern elements from one or more external measuring devices.
4. The device of claim 3 , wherein the first measuring unit comprises a first light source for a visible wavelength range and/or a second light source for a deep ultraviolet wavelength range.
5. The device of claim 1 , wherein the at least one first means comprises a first measuring unit configured for ascertaining the surface unevenness data of the rear side in an environment that does not correspond to the operating environment.
6. The device of claim 5 , wherein the second measuring unit comprises a third light source for the visible wavelength range and/or a fourth light source for the deep ultraviolet wavelength range.
7. The device of claim 6 , wherein the first measuring unit ascertains the surface unevenness data of the rear side and the second measuring unit ascertains the placement data of the pattern elements without altering a position of the reflective photolithographic mask.
8. The device of claim 7 , wherein the computing unit is configured to take account of a deformation of the reflective photolithographic mask on account of the holding of the reflective photolithographic mask in the measurement environment.
9. The device of claim 1 , wherein the at least one second means comprises a second measuring unit configured for ascertaining the placement data of the pattern elements in an environment that does not correspond to the operating environment.
10. The device of claim 1 , wherein the computing unit is configured to determine the placements of the pattern elements with respect to the mount of the reflective photolithographic mask in the operating environment.
11. The device of claim 1 , wherein the computing unit is configured to determine at least one deviation of the placements of the pattern elements with respect to design data in the operating environment.
12. The device of claim 11 , wherein the computing unit is furthermore configured to determine from the at least one deviation of the placements of the pattern elements and/or from the determined surface unevenness data at least one arrangement of pixels which corrects the at least one deviation and/or the rear-side surface unevenness.
13. The device of claim 12 , further comprising: a laser system configured to introduce the at least one arrangement of pixels into a substrate of the reflective photolithographic mask.
14. The device of claim 1 , wherein the computing unit is configured to determine the placements of the pattern elements of the photolithographic mask with respect to an electrostatic chuck with a surface assumed to be ideally flat in the operating environment.
15. The device of claim 14 wherein the at least one first means is configured to determine surface unevenness data of the rear side of the reflective photolithographic mask held by a first mount in the measurement environment, and the first mount has a measurable surface unevenness that is not ideally flat.
16. The device of claim 1 , wherein the second measuring unit is configured to radiate substantially perpendicularly onto the front side of the reflective photolithographic mask and the first measuring unit is configured to radiate substantially perpendicularly onto the rear side of the reflective photolithographic mask.
17. The device of claim 1 , wherein the device comprises a three-point mount for holding the reflective photolithographic mask.
18. The device of claim 1 , wherein the at least one first means comprises at least one element from the group: a distance sensor and an interferometer.
19. The device of claim 1 , wherein the computing unit is configured to relate the placements of the pattern elements in the operating environment to a flat surface of a mount of the reflective photolithographic mask in the operating environment.
20. The device of claim 1 , wherein the computing unit is configured for determining a gravitation effect of the reflective photolithographic mask during the process of ascertaining the placement data and/or during the process of ascertaining the surface unevenness data.
21. The device of claim 1 wherein the pattern elements are disposed on a front side of the reflective photolithographic mask, and the at least one first means is configured to determine surface unevenness data of the rear side of the reflective photolithographic mask in which the rear side is opposite of the front side;
wherein the surface unevenness data of the rear side of the reflective photolithographic mask represent local deviations of the rear side surface of the reflective photolithographic mask from an average rear side surface of the reflective photolithographic mask.
22. The device of claim 1 wherein the at least one first means comprises at least one first means configured to determine surface unevenness data of a mount of the reflective photolithographic mask in the measurement environment that does not correspond to the operating environment of the reflective photolithographic mask.
23. A method for determining placements of pattern elements of a reflective photolithographic mask in the operating environment thereof, wherein the method comprises the following steps:
a. determining surface unevenness data of a rear side of the reflective photolithographic mask and/or surface unevenness data of a mount of the reflective photolithographic mask when the mask is disposed in a measurement environment that does not correspond to the operating environment of the reflective photolithographic mask;
wherein the operating environment is located in an exposure system of a lithography device, and the measurement environment is located outside of the operating environment;
b. determining placement data of the pattern elements of the mask when the mask is disposed in the measurement environment; and
c. calculating the placements of the pattern elements of the mask when the mask is disposed in the operating environment from the determined surface unevenness data of the rear side and/or of the mount and the determined placement data;
wherein determining surface unevenness data comprises determining at least one of (i) the surface unevenness data of the rear side of the reflective photolithographic mask held by a first mount in the measurement environment, or (ii) the surface unevenness data of the first mount in the measurement environment;
wherein calculating the placements of the pattern elements comprises calculating the placements of the pattern elements of the reflective photolithographic mask held by a second mount in the operating environment from the determined placement data and at least one of (i) the determined surface unevenness data of the rear side of the reflective photolithographic mask, or (ii) the determined surface unevenness data of the first mount.
24. The method of claim 23 , wherein determining the surface unevenness data comprises ascertaining the surface unevenness data by use of a first measuring unit, wherein determining the placement data comprises ascertaining the placement data of the pattern elements by use of a second measuring unit, and wherein the surface unevenness data and the placement data are ascertained in a common measurement process.
25. The method of claim 23 , wherein determining the surface unevenness data is carried out in a temperature-regulating phase of the reflective photolithographic mask.
26. The method of claim 23 , further comprising the step of: introducing at least one arrangement of pixels into a substrate of the reflective photolithographic mask which corrects at least one deviation of the placements of the pattern elements and/or of the rear-side surface unevenness in the operating environment.
27. A computer program containing instructions which, when executed by a computer system, cause the computer system to carry out the method of claim 23 .