Granted Patent B1

US 12,243,797 · App. 17/478,843 · Granted Mar 4, 2025

Inventors: Amrita Mathuriya (Portland, OR); Christopher B. Wilkerson (Portland, OR); Rajeev Kumar Dokania (Beaverton, OR); Debo Olaosebikan (San Francisco, CA); Sasikanth Manipatruni (Portland, OR)

Assignee: Kepler Computing Inc.

H01L23/3675H01L23/481H01L23/49816H01L23/49833H01L23/49838H01L23/5385H01L23/5386H01L25/105G06N20/00H01L2924/14335H01L2924/1438H01L2924/1441

Abstract

Claims (39)

1. An apparatus comprising:

a first die comprising a load and store unit; and

a second die stacked on the first die, wherein the second die includes a vector math unit and a matrix math unit, wherein the load and store unit is to store data generated by the vector math unit and the matrix math unit.

2. The apparatus of claim 1 , wherein the first die consumes less power than the second die.

3. The apparatus of claim 1 , comprising a heat sink to manage thermals of the first die and the second die.

4. The apparatus of claim 1 , wherein the first die includes a scaler unit which works with the vector math unit of the second die.

5. The apparatus of claim 1 , wherein the first die includes a cache unit, a scheduler, a control logic unit, and a scalar matrix unit.

6. The apparatus of claim 1 , wherein the second die includes a first interconnect fabric, wherein the first die includes a second interconnect fabric, wherein the first interconnect fabric is coupled to the second interconnect fabric.

7. The apparatus of claim 6 , wherein the first interconnect fabric of the second interconnect fabric includes one of: a network on chip, a mesh fabric, or a ring fabric.

8. The apparatus of claim 6 , wherein the first interconnect fabric is coupled to the second interconnect fabric via copper-to-copper bonding.

9. The apparatus of claim 1 , wherein the second die includes a majority gate, a minority gate, or a threshold gate.

10. The apparatus of claim 1 , wherein the second die includes ferroelectric logic or paraelectric logic.

11. The apparatus of claim 9 , wherein the majority gate, the minority gate, or the threshold gate include non-linear polar material which include one of: a ferroelectric material, a paraelectric material, or a non-linear dielectric.

12. The apparatus of claim 11 , wherein the ferroelectric material includes one of:

bismuth ferrite (BFO) or BFO with a first doping material wherein the first doping material is one of lanthanum, or elements from lanthanide series of periodic table;

lead zirconium titanate (PZT) or PZT with a second doping material, wherein the second doping material is one of La or Nb;

a relaxor ferroelectric which includes one of: lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate (PLZT), lead scandium niobate (PSN), barium titanium-bismuth zinc niobium tantalum (BT-BZNT), or barium titanium-barium strontium titanium (BT-BST);

a perovskite which includes one of: BaTiO 3 , PbTiO 3 , KNbO 3 , or NaTaO 3;

a hexagonal ferroelectric which includes one of: YMnO 3 , or LuFeO 3;

hexagonal ferroelectrics of a type h-RMnO 3 , where R is a rare earth element which includes one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y);

hafnium (Hf), zirconium (Zr), aluminum (Al), silicon (Si), their oxides, or their alloyed oxides;

hafnium oxides as Hf ( 1-x)E x O y , where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, Zr, or Y;

Al ( 1-x)Sc (x) N, Ga ( 1-x)Sc (x) N, Al ( 1-x)Y (x) N or Al ( 1-x-y)Mg (x) Nb (y) N, y doped HfO 2 , where x includes one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘x’ is a fraction;

niobate type compounds LiNbO 3 , LiTaO 3 , lithium iron tantalum oxy fluoride, barium strontium niobate, sodium barium niobate, or potassium strontium niobate; or

an improper ferroelectric which includes one of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 and 100.

13. The apparatus of claim 11 , wherein the paraelectric material includes: SrTiO 3 , Ba (x) Sr (y) TiO 3 (where x is −0.05, and y is 0.95), HfZrO 2 , Hf—Si—O, La-substituted PbTiO 3 , or PMN-PT based relaxor ferroelectrics.

14. A system comprising:

a memory;

a first die comprising a load and store unit, wherein the first die is coupled to the memory;

a second die stacked on the first die, wherein the second die includes a vector math unit and a matrix math unit, wherein the load and store unit comprises registers to store data generated by the vector math unit and the matrix math unit, wherein the second die includes a majority gate, a minority gate, or a threshold gate; and

a communication interface to allow the first die to communicate with another device.

15. The system of claim 14 , wherein the first die consumes less power than the second die.

16. The system of claim 14 , comprising a heat sink on the second die.

17. The system of claim 14 , wherein the first die includes a scaler unit which works with the vector math unit of the second die.

18. An apparatus comprising:

a first die comprising a load and store unit and a vector math unit coupled to the load and store unit; and

a second die stacked on the first die, wherein the second die includes a matrix math unit and a scheduler and control logic coupled to the matrix math unit, wherein the load and store unit comprises registers to store data generated by the matrix math unit.

19. The apparatus of claim 18 , wherein the second die comprises a majority gate, a minority gate, or a threshold gate.

20. The apparatus of claim 19 , wherein the second die consumes more power than the first die, wherein the apparatus comprises a heat sink on the second die.

Assignments (1)

Continuity (1)

References Cited (279)

Cited By (3)

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