Polishing pad, manufacturing method thereof and preparing method of semiconductor device using the same
The present disclosure relates to a polishing pad, a method of manufacturing the polishing pad, and a method of manufacturing a semiconductor device using the same. In the polishing pad, an unexpanded solid-phase blowing agent is included in a polishing composition when a polishing layer is manufactured, and the unexpanded solid-phase blowing agent is expanded during a curing process to form a plurality of uniform pores in the polishing layer, such that defects occurring on a surface of the semiconductor substrate may be prevented. In addition, the present disclosure may provide a method of manufacturing a semiconductor device to which the polishing pad is applied.
1. A polishing pad, comprising a polishing layer, wherein the polishing layer includes a plurality of pores, and
the pores have a value of 0.5 to 1 according to the following Equation 1 or 2,
wherein the pores formed in the polishing layer have a D50 of 15 to 65 μm:
D
10
D
50
[
Equation
1
]
D
50
D
9
0
[
Equation
2
]
wherein
D10 is a diameter of pores in 10% cumulative volume distribution,
D50 is a diameter of pores on 50% cumulative volume distribution, and
D90 is a diameter of pores on 90% cumulative volume distribution.
2. The polishing pad of claim 1 , wherein the pores have a standard deviation of 2 to 9 of measured values for D10 to D90.
3. The polishing pad of claim 1 , wherein the polishing layer has a real contact area of 0.02 to 0.05 mm 2 with a semiconductor substrate.
4. The polishing pad of claim 1 , wherein the pores have a value of 0.5 to 1.5 according to the following Equation 3:
(
D
90
-
D
50
)
(
D
50
-
D
10
)
[
Equation
3
]
wherein
D10 is a diameter of pores in 10% cumulative volume distribution,
D50 is a diameter of pores in 50% cumulative volume distribution, and
D90 is a diameter of pores in 90% cumulative volume distribution.
5. The polishing pad of claim 1 , wherein the polishing layer includes a shell derived from an unexpanded solid-phase blowing agent.
6. The polishing pad of claim 5 , wherein the shell is one or more selected from the group consisting of a vinylidene chloride-based copolymer, an acrylonitrile-based copolymer, a methacrylonitrile-based copolymer and an acryl-based copolymer.
7. A method of manufacturing a polishing pad, the method comprising:
i) preparing a prepolymer composition;
ii) preparing a composition for manufacturing a polishing layer, containing the prepolymer composition, a blowing agent and a curing agent; and
iii) curing the composition for manufacturing a polishing layer to prepare a polishing layer,
wherein the polishing layer includes a plurality of pores, and
the pores have a value of 0.5 to 1 according to the following Equation 1 or 2,
wherein the pores formed in the polishing layer have a D50 of 15 to 65 μm:
D
10
D
50
[
Equation
1
]
D
50
D
90
[
Equation
2
]
wherein
D10 is a diameter of pores in 10% cumulative volume distribution,
D50 is a diameter of pores on 50% cumulative volume distribution, and
D90 is a diameter of pores on 90% cumulative volume distribution.
8. The method of claim 7 , wherein the pores have a value of 0.5 to 1.5 according to the following Equation 3:
(
D
90
-
D
50
)
(
D
50
-
D
10
)
[
Equation
3
]
wherein
D10 is a diameter of pores in 10% cumulative volume distribution,
D50 is a diameter of pores in 50% cumulative volume distribution, and
D90 is a diameter of pores in 90% cumulative volume distribution.
9. The method of claim 7 , wherein the blowing agent includes an unexpanded solid-phase blowing agent.
10. The method of claim 9 , wherein the unexpanded solid-phase blowing agent is expanded by the curing of the step iii) to form a plurality of pores with a uniform size.
11. The method of claim 7 , wherein the polishing layer includes a shell derived from an unexpanded solid-phase blowing agent.
12. The method of claim 7 , wherein
in step iii), the composition for manufacturing a polishing layer is injected into a preheated mold and cured, and
the preheating temperature of the mold is 50 to 150° C.
13. The method of claim 7 , wherein the pores have a standard deviation of 2 to 9 of measured values for D10 to D90.
14. A method of manufacturing a semiconductor device, the method comprising:
1) Providing a polishing pad including a polishing layer; and
2) Polishing the semiconductor substrate while rotating the semiconductor substrate and the polishing layer relative to each other so that a polished surface of the semiconductor substrate is in contact with the polishing surface of the polishing layer,
wherein the polishing layer includes a plurality of pores, and
the pores have a value of 0.5 to 1 according to the following Equation 1 or 2,
wherein the pores formed in the polishing layer have a D50 of 15 to 65 μm:
D
10
D
50
[
Equation
1
]
D
50
D
90
[
Equation
2
]
wherein
D10 is a diameter of pores in 10% cumulative volume distribution,
D50 is a diameter of pores on 50% cumulative volume distribution, and
D90 is a diameter of pores on 90% cumulative volume distribution.
15. The method of claim 14 , wherein the pores have a value of 0.5 to 1.5 according to the following Equation 3:
(
D
90
-
D
50
)
(
D
50
-
D
10
)
[
Equation
3
]
wherein
D10 is a diameter of pores in 10% cumulative volume distribution,
D50 is a diameter of pores in 50% cumulative volume distribution, and
D90 is a diameter of pores in 90% cumulative volume distribution.
16. The method of claim 14 , wherein the polishing layer has a real contact area of 0.02 to 0.05 mm 2 with a semiconductor substrate.
17. The method of claim 14 , wherein the pores have a standard deviation of 2 to 9 of measured values for D10 to D90.