Group III-nitride high-electron mobility transistors with a buried metallic conductive material layer and process for making the same
An apparatus includes a substrate; a group III-Nitride buffer layer on the substrate; a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer may include a higher bandgap than a bandgap of the group III-Nitride buffer layer; a source electrically coupled to the group III-Nitride barrier layer; a gate electrically coupled to the group III-Nitride barrier layer; a drain electrically coupled to the group III-Nitride barrier layer; and a conductive metallic region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer. Additionally, the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer.
1. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a conductive metallic region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer,
wherein the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer; and
wherein the conductive metallic region comprises selectively grown Niobium nitride (NbN).
2. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a conductive metallic region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer,
wherein the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer; and
wherein the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer between the source and the gate, but does not overlap the source.
3. The apparatus of claim 1 , wherein the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer to overlap the source, but does not overlap the gate.
4. The apparatus of claim 1 , wherein the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer to extend past the gate toward the source.
5. The apparatus of claim 1 , wherein the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer and be spaced from an edge of the substrate but overlapping the source.
6. The apparatus of claim 1 , wherein the conductive metallic region is electrically coupled to said source.
7. The apparatus of claim 1 , wherein the conductive metallic region is electrically coupled to said gate.
8. The apparatus of claim 1 , wherein the conductive metallic region is in the group III-Nitride buffer layer.
9. The apparatus of claim 8 , further comprising an additional group III-Nitride buffer layer arranged on the conductive metallic region.
10. The apparatus of claim 1 , wherein the conductive metallic region is in the substrate below said group III-Nitride barrier layer.
11. The apparatus of claim 2 , wherein the conductive metallic region comprises one of the following: a metal material, a superconducting material, a conductive layer, a metal layer, a superconducting layer, a conductive portion, a metal portion, and/or a superconducting portion.
12. The apparatus of claim 2 , wherein the conductive metallic region comprises selectively grown Niobium nitride (NbN).
13. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer:
a source electrically coupled to the group III-Nitride barrier layer;
a gate coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a conductive metallic region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer,
wherein the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer; and
wherein the conductive metallic region comprises epitaxial metal layers of Niobium nitride (NbN).
14. The apparatus of claim 1 , further comprising a field plate.
15. The apparatus of claim 1 , further comprising a field plate, wherein the field plate is electrically coupled to said source.
16. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a superconducting material region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer,
wherein the superconducting material region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer; and
wherein the superconducting material region comprises selectively grown Niobium nitride (NbN).
17. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a superconducting material region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer,
wherein the superconducting material region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer; and
wherein the superconducting material region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer between the source and the gate, but does not overlap the source.
18. The apparatus of claim 16 , wherein the superconducting material region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer to overlap the source, but does not overlap the gate.
19. The apparatus of claim 16 , wherein the superconducting material region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer to extend past the gate toward the source.
20. The apparatus of claim 16 , wherein the superconducting material region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer and be spaced from an edge of the substrate but overlapping the source.
21. The apparatus of claim 16 , wherein the superconducting material region is electrically coupled to said source.
22. The apparatus of claim 16 , wherein the superconducting material region is electrically coupled to said gate.
23. The apparatus of claim 16 , wherein the superconducting material region is in the group III-Nitride buffer layer.
24. The apparatus of claim 23 , further comprising an additional group III-Nitride buffer layer arranged on the superconducting material region.
25. The apparatus of claim 16 , wherein the superconducting material region is in the substrate below said group III-Nitride barrier layer.
26. The apparatus of claim 17 , wherein the superconducting material region comprises one of the following: a metallic material, a superconducting material, a conductive layer, a metallic layer, a superconducting layer, a conductive portion, a metallic portion, and/or a superconducting portion.
27. The apparatus of claim 17 , wherein the superconducting material region comprises selectively grown Niobium nitride (NbN).
28. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
a source electrically coupled to the group III-Nitride barrier layer:
a gate coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a superconducting material region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer
wherein the superconducting material region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer; and
wherein the superconducting material region comprises epitaxial metallic layers of Niobium nitride (NbN).
29. The apparatus of claim 16 , further comprising a field plate.
30. The apparatus of claim 16 , further comprising a field plate, wherein the field plate is electrically coupled to said source.
31. The apparatus of claim 1 , wherein the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer between the source and the gate, but does not overlap the source.
32. The apparatus of claim 2 , further comprising a field plate.
33. The apparatus of claim 13 , wherein the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer between the source and the gate, but does not overlap the source.
34. The apparatus of claim 16 , wherein the superconducting material region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer between the source and the gate, but does not overlap the source.
35. The apparatus of claim 28 , wherein the superconducting material region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer between the source and the gate, but does not overlap the source.